Electrical Switching and Other Properties of Chalcogenide Glasses

Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.

Bold strategies for Indian science

When an Indian prime minister publicly admits that India has fallen behind China, it is news. Manmohan Singh's statement last January at the Indian Science Congress in Bhubaneswar that this is so with respect to scientific research, and that “India's relative position in the world of science has been declining”, has rung alarm bells. Singh was not springing anything new on Indian scientists; many of us will admit that things are not well1. Recognizing the problem is the first step towards reversing this slide.

Ultrasound Assisted Optical Tomography: Estimation of phase Shift experienced by photon on transit through US insonified region for detection of breast tumor

A Monte Carlo model of ultrasound modulation of multiply scattered coherent light in a highly scattering media has been carried out for estimating the phase shift experienced by a photon beam on its transit through US insonified region. The phase shift is related to the tissue stiffness, thereby opening an avenue for possible breast tumor detection. When the scattering centers in the tissue medium is exposed to a deterministic forcing with the help of a focused ultrasound (US) beam, due to the fact that US-induced oscillation is almost along particular direction, the direction defined by the transducer axis, the scattering events increase, thereby increasing the phase shift experienced by light that traverses through the medium. The phase shift is found to increase with increase in anisotropy g of the medium. However, as the size of the focused region which is the region of interest (ROI) increases, a large number of scattering events take place within the ROI, the ensemble average of the phase shift (Delta phi) becomes very close to zero. The phase of the individual photon is randomly distributed over 2 pi when the scattered photon path crosses a large number of ultrasound wavelengths in the focused region. This is true at high ultrasound frequency (1 MHz) when mean free path length of photon l(s) is comparable to wavelength of US beam. However, at much lower US frequencies (100 Hz), the wavelength of sound is orders of magnitude larger than l(s), and with a high value of g (g 0.9), there is a distinct measurable phase difference for the photon that traverses through the insonified region. Experiments are carried out for validation of simulation results.

Switching of a Sixteen Electrode Array for Wireless EIT System Using a RF-Based 8-Bit Digital Data Transmission Technique

Surface electrode switching of 16-electrode wireless EIT is studied using a Radio Frequency (RF) based digital data transmission technique operating with 8 channel encoder/decoder ICs. An electrode switching module is developed the analog multiplexers and switched with 8-bit parallel digital data transferred by transmitter/receiver module developed with radio frequency technology. 8-bit parallel digital data collected from the receiver module are converted to 16-bit digital data by using binary adder circuits and then used for switching the electrodes in opposite current injection protocol. 8-bit parallel digital data are generated using NI USB 6251 DAQ card in LabVIEW software and sent to the transmission module which transmits the digital data bits to the receiver end. Receiver module supplies the parallel digital bits to the binary adder circuits and adder circuit outputs are fed to the multiplexers of the electrode switching module for surface electrode switching. 1 mA, 50 kHz sinusoidal constant current is injected at the phantom boundary using opposite current injection protocol. The boundary potentials developed at the voltage electrodes are measured and studied to assess the wireless data transmission.

Channel estimation using minimum bit error rate framework for BPSK signals

We consider the design of a linear equalizer with a finite number of coefficients in the context of a classical linear intersymbol-interference channel with additive Gaussian noise for channel estimation. Previous literature has shown that Minimum Bit Error Rate(MBER) based detection has outperformed Minimum Mean Squared Error (MMSE) based detection. We pose the channel estimation problem as a detection problem and propose a novel algorithm to estimate the channel based on the MBER framework for BPSK signals. It is shown that the proposed algorithm reduces BER compared to an MMSE based channel estimation when used in MMSE or MBER detection.

Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage

Electrical switching studies on amorphous Si15Te75Ge10 thin film devices reveal the existence of two distinct, stable low-resistance, SET states, achieved by varying the electrical input to the device. The multiple resistance levels can be attributed to multi-stage crystallization, as observed from temperature dependant resistance studies. The devices are tested for their ability to be RESET with minimal resistance degradation; further, they exhibit a minimal drift in the SET resistance value even after several months of switching. (c) 2013 Elsevier B.V. All rights reserved.

An 8-to-1 bit 1-MS/s SAR ADC With VGA and Integrated Data Compression for Neural Recording

Low power consumption per channel and data rate minimization are two key challenges which need to be addressed in future generations of neural recording systems (NRS). Power consumption can be reduced by avoiding unnecessary processing whereas data rate is greatly decreased by sending spike time-stamps along with spike features as opposed to raw digitized data. Dynamic range in NRS can vary with time due to change in electrode-neuron distance or background noise, which demands adaptability. An analog-to-digital converter (ADC) is one of the most important blocks in a NRS. This paper presents an 8-bit SAR ADC in 0.13-mu m CMOS technology along with input and reference buffer. A novel energy efficient digital-to-analog converter switching scheme is proposed, which consumes 37% less energy than the present state-of-the-art. The use of a ping-pong input sampling scheme is emphasized for multichannel input to alleviate the bandwidth requirement of the input buffer. To reduce the data rate, the A/D process is only enabled through the in-built background noise rejection logic to ensure that the noise is not processed. The ADC resolution can be adjusted from 8 to 1 bit in 1-bit step based on the input dynamic range. The ADC consumes 8.8 mu W from 1 V supply at 1 MS/s speed. It achieves effective number of bits of 7.7 bits and FoM of 42.3 fJ/conversion-step.

End-to-End BER Analysis of Space Shift Keying in Decode-and-Forward Cooperative Relaying

Space shift keying (SSK) is a special case of spatial modulation (SM), which is a relatively new modulation technique that is getting recognized to be attractive in multi-antenna communications. Our new contribution in this paper is an analytical derivation of exact closed-form expression for the end-to-end bit error rate (BER) performance of SSK in decode-and-forward (1)1,) cooperative relaying. An incremental relaying (IR) scheme with selection combining (SC) at the destination is considered. In SSK, since the information is carried by the transmit antenna index, traditional selection combining methods based on instantaneous SNRs can not be directly used. To overcome this problem, we propose to do selection between direct and relayed paths based on the Euclidean distance between columns of the channel matrix. With this selection metric, an exact analytical expression for the end-to-end BER is derived in closed-form. Analytical results are shown to match with simulation results.

Channel estimation relying on the minimum bit-error-ratio criterion for BPSK and QPSK signals

The authors consider the channel estimation problem in the context of a linear equaliser designed for a frequency selective channel, which relies on the minimum bit-error-ratio (MBER) optimisation framework. Previous literature has shown that the MBER-based signal detection may outperform its minimum-mean-square-error (MMSE) counterpart in the bit-error-ratio performance sense. In this study, they develop a framework for channel estimation by first discretising the parameter space and then posing it as a detection problem. Explicitly, the MBER cost function (CF) is derived and its performance studied, when transmitting binary phase shift keying (BPSK) and quadrature phase shift keying (QPSK) signals. It is demonstrated that the MBER based CF aided scheme is capable of outperforming existing MMSE, least square-based solutions.

Bit Error Probability Analysis of SSK in DF Relaying with Threshold-Based Best Relay Selection and Selection Combining

In this letter, we analyze the end-to-end average bit error probability (ABEP) of space shift keying (SSK) in cooperative relaying with decode-and-forward (DF) protocol, considering multiple relays with a threshold based best relay selection, and selection combining of direct and relayed paths at the destination. We derive an exact analytical expression for the end-to-end ABEP in closed-form for binary SSK, where analytical results agree with simulation results. For non-binary SSK, approximate analytical and simulation results are presented.

The Evolution of Animal Welfare and the 3Rs in Brazil, China, and India

Increasingly, scientific collaborations and contracts cross country borders. The need for assurance that the quality of animal welfare and the caliber of animal research conducted are equivalent among research partners around the globe is of concern to the scientific and laboratory animal medicine communities, the general public, and other key stakeholders. Therefore, global harmonization of animal care and use standards and practices, with the welfare of the animals as a cornerstone, is essential. In the evolving global landscape of enhanced attention to animal welfare, a widely accepted path to achieving this goal is the successful integration of the 3Rs in animal care and use programs. Currently, awareness of the 3Rs, their implementation, and the resulting animal care and use standards and practices vary across countries. This variability has direct effects on the animals used in research and potentially the data generated and may also have secondary effects on the country's ability to be viewed as a global research partner. Here we review the status of implementation of the 3Rs worldwide and focus on 3 countries-Brazil, China and India-with increasing economic influence and an increasing footprint in the biomedical research enterprise.

An efficient design of serial and parallel memory using Quantum dot cellular automata

Quantum cellular automata (QCA) is a new technology in the nanometer scale and has been considered as one of the alternative to CMOS technology. In this paper, we describe the design and layout of a serial memory and parallel memory, showing the layout of individual memory cells. Assuming that we can fabricate cells which are separated by 10nm, memory capacities of over 1.6 Gbit/cm2 can be achieved. Simulations on the proposed memories were carried out using QCADesigner, a layout and simulation tool for QCA. During the design, we have tried to reduce the number of cells as well as to reduce the area which is found to be 86.16sq mm and 0.12 nm2 area with the QCA based memory cell. We have also achieved an increase in efficiency by 40%.These circuits are the building block of nano processors and provide us to understand the nano devices of the future.

Packet error rate and bit error rate non-deterministic relationship in optical network applications

The non-deterministic relationship between Bit Error Rate and Packet Error Rate is demonstrated for an optical media access layer in common use. We show that frequency components of coded, non-random data can cause this relationship. © 2005 Optical Society of America.

Study on Microstructure and Nanomechanics Properties of Antibacterial Bone China

Fracture appearance, surface and nanomechanics properties of antibacterial ceramics contairing rare earth phosphate composite antibacterial materials were characterized and measured by SEM, AFM and Nanoindenter, respectively. Results show that grain of fracture surface of antibacterial ceramics grows uniform refinement topography of bubble break-up appears at the surface, which is flat and has liquid character, by adding the phosphate composite containing rare earth, nevertheless needle-like crystal and granular outgrowth form at fracture surface and surface of common ceramics, respectively. Young's modulus of antibacterial ceramic film is 74. 397 GPa and hardness is 8. 134 GPa, which increses by 4.4﹪ and 1.6﹪ comparing with common ceramics, respectively. Loading curves of two kind of ceramics have obvious nonlinear character under 700 nm and linear character between 700 ～ 1000 nm, and unloading curve have obvious linear character.