987 resultados para Tomografía computada volumétrica Cone-Beam

TIME-RESOLVED REFLECTIVITY TECHNIQUES FOR DYNAMIC STUDIES OF ELECTRON-BEAM RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS

Relevância:

20.00% 20.00%

Publicador:

Veja mais

SINGULAR PLASTIC FIELDS IN STEADY PENETRATION OF A RIGID CONE - CLOSURE

Relevância:

20.00% 20.00%

Publicador:

Veja mais

PERFORMANCE OF CMOS DEVICES IN SILICON-ON-SAPPHIRE FILMS AFTER SOLID-PHASE EPITAXIAL-GROWTH WITH RAPID ELECTRON-BEAM HEATING

Relevância:

20.00% 20.00%

Publicador:

Veja mais

ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

RAPID ELECTRON-BEAM ANNEALING OF TANTALUM FILMS ON SILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Beam control and manipulation in vertical cavity surface emitting lasers

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Gaussian beam profile and single transverse mode emission from previously multi-mode gain guided VCSELs using novel etch

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Surface diagnostics of dry etched III-V semiconductor samples using focused ton beam and secondary ion mass spectrometry

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Comparing laminar and equivalent shear beam (ESB) containers for dynamic centrifuge modelling

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Mechanisms of elastodynamic erosion of electron-beam thermal barrier coatings

Relevância:

20.00% 20.00%

Publicador:

Veja mais

ELECTRON-BEAM PROCESSING FOR MOS DEVICES WITH SHALLOW JUNCTIONS

Relevância:

20.00% 20.00%

Publicador:

Veja mais

HIGHLY CONTROLLED DIFFUSION OF ION-IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON-BEAM HEATING

Relevância:

20.00% 20.00%

Publicador:

Veja mais

TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON-BEAM HEATING OF DEPOSITED POLYSILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

ELECTRON-BEAM ANNEALING OF B-IMPLANTED, P-IMPLANTED, AS-IMPLANTED, SB-IMPLANTED, AND GA-IMPLANTED SILICON BY MULTIPLE-SCAN METHOD

Relevância:

20.00% 20.00%

Publicador:

Veja mais

RECRYSTALLIZATION OF CVD POLY-SI ON INSULATOR BY DUAL ELECTRON-BEAM PROCESSING

Relevância:

20.00% 20.00%

Publicador:

Veja mais