Genomic sequence of mandarin fish rhabdovirus with an unusual small non-transcriptional ORF

The complete genome of mandarin fish Siniperca chuatsi rhabdovirus (SCRV) was cloned and sequenced. It comprises 11,545 nucleotides and contains five genes encoding the nucleoprotein N, the phosphoprotein P, the matrix protein M, the glycoprotein G, and the RNA-dependent RNA polymerase protein L. At the 3' and 5' termini of SCRV genome, leader and trailer sequences show inverse complementarity. The N, P, M and G proteins share the highest sequence identities (ranging from 14.8 to 41.5%) with the respective proteins of rhabdovirus 903/87, the L protein has the highest identity with those of vesiculoviruses, especially with Chandipura virus (44.7%). Phylogenetic analysis of L proteins showed that SCRV clustered with spring vireamia of carp virus (SVCV) and was most closely related to viruses in the genus Vesiculovirus. In addition, an overlapping open reading frame (ORF) predicted to encode a protein similar to vesicular stomatitis virus C protein is present within the P gene of SCRV. Furthermore, an unoverlapping small ORF downstream of M ORF within M gene is predicted (tentatively called orf4). Therefore, the genomic organization of SCRV can be proposed as 3' leader-N-P/C-M-(orf4)-G-L-trailer 5'. Orf4 transcription or translation products could not be detected by northern or Western blot, respectively, though one similar mRNA band to M mRNA was found. This is the first report on one small unoverlapping ORF in M gene of a fish rhabdovirus. (c) 2007 Elsevier B.V. All rights reserved.

Free radical scavenging and antioxidant enzymes activation of polysaccharide extract from Nostoc sphaeroides

Nostoc sphaeroides Kuetzing has been used as a traditional medicine in China to treat a variety of ailments. This research identified the antioxidant activities of polysaccharide extract from Nostoc sphaeroides. The extract, which contains 46.2% carbohydrates, exhibited an effective scavenging capability on superoxide radical, hydroxyl radicals in non site-specific as well as site-specific assays, and also performed lipid peroxidation inhibition in a dose-dependent manner. Polysaccharide extract had no 1,1-diphenyl-2-picrylhydrazyl radical scavenging potential at all test concentrations. Activities of superoxide dismutase, catalase, and glutathione peroxidase in human embryo kidney 293 cells were increased effectively when Nostoc sphaeroides extract was applied. These results suggested that the use of N. sphaeroides in treating ailments may be based on the antioxidant capacities of polysaccharide composition.

Androgen receptor targets NFKB and TSPI to suppress prostate tumor growth in vivo

The androgen role in the maintenance of prostate epithelium is subject to conflicting opinions. While androgen ablation drives the regression of normal and cancerous prostate, testosterone may cause both proliferation and apoptosis. Several investigators note decreased proliferation and stronger response to chemotherapy of the prostate cancer cells stably expressing androgen receptor (AR), however no mechanistic explanation was offered. In this paper we demonstrate in vivo anti-tumor effect of the AR on prostate cancer growth and identify its molecular mediators. We analyzed the effect of AR on the tumorigenicity of prostate cancer cells. Unexpectedly, the AR-expressing cells formed tumors in male mice at a much lower rate than the AR-negative controls. Moreover, the AR-expressing tumors showed decreased vascularity and massive apoptosis. AR expression lowered the angiogenic potential of cancer cells, by increasing secretion of an anti-angiogenic protein, thrombospondin-1. AR activation caused a decrease in RelA, a subunit of the pro-survival transcription factor NF kappa B, reduced its nuclear localization and transcriptional activity. This, in turn, diminished the expression of its anti-apoptotic targets, Bcl-2 and IL-6. Increased apoptosis within AR-expressing tumors was likely due to the NF kappa B suppression, since it was restricted to the cells lacking nuclear (active) NF kappa B. Thus we for the first time identified combined decrease of NF kappa B and increased TSP1 as molecular events underlying the AR anti-tumor activity in vivo. Our data indicate that intermittent androgen ablation is preferable to continuous withdrawal, a standard treatment for early-stage prostate cancer. (C) 2007 Wiley-Liss, Inc.

FB1, an E2A fusion partner in childhood leukemia, interacts with U19/EAF2 and inhibits its transcriptional activity

Background: U19/EAF2 is a potential tumor suppressor exhibiting frequent down-regulation and allelic loss in advanced human prostate cancer specimens. U 19/EAF2 has also been identified as ELL-associated factor 2 (EAF2) based on its binding to ELL, a fusion partner of MLL in acute myeloid leukemia. U19/EAF2 is a putative transcription factor with a transactivation domain and capability of sequence-specific DNA binding. Methods: Yeast-two-hybrid-screening was used to identify U19/EAF2-binding partners. Co-immunoprecipitation and mammalian 1-hybrid assay were used to characterize a U19/EAF2-binding partner. Results: FB1, an E2A fusion partner in childhood leukemia, was identified as a binding-partner of U19/EAF2. FB1 also binds to EAF1, the only homologue of U19/EAF2. FB1 also interacts and co-localizes with ELL in the nucleus. Interestingly, FB1 inhibited the transcriptional activity of U19/EAF2 but not EAF1. Conclusions: FB1 is an important binding partner and a functional regulator of U19/EAF2, EAF1, and/or ELL. (c) 2007 Elsevier Ireland Ltd. All rights reserved.

Modelling and comparison of trapped fields in (RE)BCO bulk superconductors for activation using pulsed field magnetization

The ability to generate a permanent, stable magnetic field unsupported by an electromotive force is fundamental to a variety of engineering applications. Bulk high temperature superconducting (HTS) materials can trap magnetic fields of magnitude over ten times higher than the maximum field produced by conventional magnets, which is limited practically to rather less than 2 T. In this paper, two large c-axis oriented, single-grain YBCO and GdBCO bulk superconductors are magnetized by the pulsed field magnetization (PFM) technique at temperatures of 40 and 65 K and the characteristics of the resulting trapped field profile are investigated with a view of magnetizing such samples as trapped field magnets (TFMs) in situ inside a trapped flux-type superconducting electric machine. A comparison is made between the temperatures at which the pulsed magnetic field is applied and the results have strong implications for the optimum operating temperature for TFMs in trapped flux-type superconducting electric machines. The effects of inhomogeneities, which occur during the growth process of single-grain bulk superconductors, on the trapped field and maximum temperature rise in the sample are modelled numerically using a 3D finite-element model based on the H-formulation and implemented in Comsol Multiphysics 4.3a. The results agree qualitatively with the observed experimental results, in that inhomogeneities act to distort the trapped field profile and reduce the magnitude of the trapped field due to localized heating within the sample and preferential movement and pinning of flux lines around the growth section regions (GSRs) and growth sector boundaries (GSBs), respectively. The modelling framework will allow further investigation of various inhomogeneities that arise during the processing of (RE)BCO bulk superconductors, including inhomogeneous Jc distributions and the presence of current-limiting grain boundaries and cracks, and it can be used to assist optimization of processing and PFM techniques for practical bulk superconductor applications. © 2014 IOP Publishing Ltd.

Annealing and activation of silicon implanted in semi-insulating InP substrates

We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate.These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved.

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by PECVD. The solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/l-s 850 degrees C thermal pulse. A mean grain size more than 1000 Angstrom and a Hall mobility of 24.9 cm(2)/V s are obtained in the crystallized films. The results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

MBE of GaN with DC-plasma source for nitrogen activation

In this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures.

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML. The fast redshift of PL energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled InAs quantum dots. The measured thermal activation energies of different samples demonstrated that the InAs wetting layer may act as a barrier for the thermionic emission of carriers in high-quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to escape thermally from the localized states.

Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing

Photoluminescence (PL) and electrical characteristics of SI-GaAs, Si+-implanted and following rapid thermal annealing (RTA), were investigated, The PL spectra of Si-GA-C-As, Ga-i-Si-As, and V-As-Si-As were obtained. This paper concentrates on the PL peak at 1.36 eV which was proven as an emission of the Si-Ga-V-Ga combination by Si+ + P+ dual implantation. The results indicate that the peak at 1.36 eV appears when the ratio of As:Ga increased during the processing. Also high activation was obtained for the sample under the same conditions. More discussion on the mechanism of Si+ implanted SI-GaAs has been made based on the Morrow model [J. Appl. Phys, 64 (1988) 1889].

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.