Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

La0.67Ba0.33MnO3 (LBMO) thin film is deposited on a 36.7degrees SrTiO3 bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T > 175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T < 175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T > 175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.

Study of relaxor behavior of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin films

Relaxor properties of polycrystalline 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) thin films were studied in terms of the diffuse nature of phase transition along with the frequency dispersion of temperature (T-m) at which the dielectric constant exhibits maximum value. Existence of remnant polarization (P-r) above the phase transition temperature, which is a characteristic property of typical relaxor ferroelectric has also been observed in the present case. The films exhibited a gradual decrease of remnant polarization with increase of temperature. Among the different models of relaxor ferroelectric, Vogel-Fulcher model has been found to be suitable to describe the frequency dispersion of T-m in this case. Freezing of dipole moment with decrease of temperature was thought to be the origin of the temperature dependence of dielectric dispersion.

Study of thickness dependence on electrical properties of (Pb,La)TiO3 thin films for memory applications

Lead-lanthanum-titanate (Pb0.72La0.28)TiO3 (PLT) is one of the interesting materials for DRAM applications due to its room temperature paraelectric nature and its higher dielectric permittivity. PLT thin films of different thickness ranging from 0.54- 0.9 mum were deposited on Pt coated Si substrates by excimer laser ablation technique. We have measured the voltage (field) dependence, the thickness dependence, temperature dependence of dc leakage currents and analysis is done on these PLT thin films. Current- voltage characteristics were measured at different temperatures for different thick films and the thickness dependence of leakage current has been explained by considering space charge limited conduction mechanism. The charge transport phenomena were studied in detail for films of different thicknesses for dynamic random access memory applications.

The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films

he thickness dependence of the electrical properties in the thin films of uniaxial SrBi2Nb2O9 has been studied in this report. According to many published literatures, it could be an effective way to identify the basic conduction process. The laser ablation was chosen as the deposition technique to ensure an oriented growth and a proper stoichiometric deposition. The structural, dielectric and conduction properties were studied as a function of thickness. The films showed good ferroelectric properties, an ordered growth, and a space-charge controlled conduction process, which was double checked by reversing the polarity of the applied voltage, and also by examining the high field current response of the sample varying in thickness.

Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate

Thin films of cobalt oxide have been deposited on various substrates, such as glass, Si(100), SrTiO3(100), and LaAlO3(100), by low pressure metalorganic chemical vapor deposition (MOCVD) using cobalt(IL), acetylacetonate as the precursor. Films obtained in the temperature range 400-600 degreesC were uniform and highly crystalline having Co3O4 phase as revealed by x-ray diffraction. Under similar conditions of growth, highly oriented thin films of cobalt oxide grow on SrTiO3(100) and LaAlO3(100). The microstructure and the surface morphology of cobalt oxide films on glass, Si(100) and single crystalline substrates, SrTiO3(100) and LaAlO3(100) were studied by scanning electron microscopy. Optical properties of the films were studied by uv-visible-near IR spectrophotometry.

Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films

The results of the studies on the effect of rare earth Nd doping on the phase formation behavior and electrical properties of sol-gel derived Pb-1.05(Zr0.53Ti0.47)O-3 (PZT) thin films are presented. The perovskite phase is obtained up to 5 at. % doping and beyond that pyrochlore phase was found to coexist with the perovskite phase in all the films. The transition temperature of undoped lead zirconate titanate (PZT) film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor-type behavior and a diffuse phase transition, similar to that observed in relaxor materials. The introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO(3) lattice, which causes the observed dielectric relaxation. Efforts were made to isolate the irreversible component contributions in low field dielectric and high field polarization switching behavior. (C) 2001 American Institute of Physics.

Electrical properties of La-graded heterostructure of Pb1?xLaxTiO3 thin films

La-graded heterostructure films were prepared by sol-gel technique on platinum substrates and electrical properties of these films were compared with those of conventional thin films of similar compositions. X-ray diffraction results indicate the pure perovskite polycrystalline structure of these films. Atomic Force Microscopy analysis revealed a finer grain size and relatively lower surface roughness. Relatively higher values of Pm and Pr (69 and 38 ?C cm?2, respectively) and excellent dielectric properties with lower loss (K=1900, tan ?=0.035 at 100 kHz) were observed for La-graded heterostructure films. Also lower leakage current density (not, vert, similar2.5 nA cm?2) and a higher onset field (not, vert, similar50 kV cm?1) of space charge conduction indicated higher breakdown strength and good leakage current characteristics. The ac electric field dependence of the permittivity at sub-switching fields was analyzed in the framework of the Rayleigh dynamics of domain walls. The estimated irreversible domain wall displacement contribution to the total dielectric permittivity was 17 and 9% for conventional 15 at.% La doped PbTiO3 and La-graded heterostructure films, respectively. The improved dielectric and polarization behavior of La-graded heterostructure films may be attributed to homogenous dopant distribution compared to the conventional 15 at.% La doped PbTiO3 films.

Study of pulsed laser ablated CaBi2Ta2O9 thin films

Polycrystalline CaBi2Ta2O9 thin films were grown on Pt/TiO2/SiO2/Si (100) substrates using a pulsed laser deposition technique. The influence of substrate temperature and oxygen pressure on crystallization and orientation of the films was studied. In-situ films deposited under a combination of higher substrate temperature and lower oxygen pressure exhibited a preferred c-axis orientation. Micro-Raman spectroscopy was used for complete understanding of phase evolution of CBT films. Thin films deposited at higher substrate temperatures showed larger grain size and higher surface roughness, observed by atomic force microscopy. The values of maximum polarization (2Pmnot, vert, similar13.4 μC/cm2), remanent polarization (2Prnot, vert, similar4.6 μC/cm2) and the coercive field Ec was about 112 kV/cm obtained for the film deposited at 650°C and annealed at 750°C. The room temperature, dielectric data revealed a dependence on the grain size.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Characterization of microstructure in laser-surface-alloyed layers of aluminum on nickel

In order to obtain basic understanding of microstructure evolution in laser-surface-alloyed layers, aluminum was surface alloyed on a pure nickel substrate using a CO2 laser. By varying the laser scanning speed, the composition of the surface layers can be systematically varied. The Ni content in the layer increases with increase in scanning speed. Detailed cross-sectional transmission electron microscopic study reveals complexities in solidification behavior with increased nickel content. It is shown that ordered B2 phase forms over a wide range of composition with subsequent precipitation of Ni2Al, an ordered omega phase in the B2 matrix, during solid-state cooling. For nickel-rich alloys associated with higher laser scan speed, the fcc gamma phase is invariably the first phase to grow from the liquid with solute trapping. The phase reorders in the solid state to yield gamma' Ni3Al. The phase competes with beta AlNi, which forms massively from the liquid. The beta AlNi transforms martensitically to a 3R structure during cooling in solid state. The results can be rationalized in terms of a metastable phase diagram proposed earlier. However, the results are at variance with earlier studies of laser processing of nickel-rich alloys.

Transition to turbulence in the free convection boundary layers on an inclined heated plate

An experimental study has been made of transition to turbulence in the free convective flows on a heated plate. Observations have been made with the plate vertical and inclined at angles up to about 50° to the vertical, both above and below the plate. A fibre anemometer was used to survey the region of intermittent turbulence. Information has thus been obtained about the range of Grashof numbers over which transition takes place. Even when the plate is vertical the region of intermittent turbulence is long. When it is inclined, this region becomes still longer in the flow below the plate as a result of the stabilizing stratification, a Richardson number effect. It is possible to have a whole flow such that it should be described as transitional, not laminar or turbulent. It was noticed that in this flow and the vertical plate one, the velocity during the laminar periods could be either of two characteristic values, one of them close to zero. The behaviour above an inclined plate could be interpreted largely as a trend towards the behaviour described in a preceding paper.

Microstructural evolution in laser-ablation-deposited Fe–25 at.% Ge thin film

Films with Fe–25 at.% Ge composition are deposited by the process of laser ablation on single crystal NaCl and Cu substrates at room temperature. Both the vapor and liquid droplets generated in this process are quenched on the substrate. The microstructures of the embedded droplets show size as well as composition dependence. The hierarchy of phase evolution from amorphous to body-centered cubic (bcc) to DO3 has been observed as a function of size. Some of the medium-sized droplets also show direct formation of ordered DO19 phase from the starting liquid. The evolution of disordered bcc structure in some of the droplets indicates disorder trapping during liquid to solid transformation. The microstructural evolution is analyzed on the basis of heat transfer mechanisms and continuous growth model in the solidifying droplets.

Analysis of shear bands in slow granular flows using a frictional Cosserat model

The slow flow of granular materials is often marked by the existence of narrow shear layers, adjacent to large regions that suffer little or no deformation. This behaviour, in the regime where shear stress is generated primarily by the frictional interactions between grains, has so far eluded theoretical description. In this paper, we present a rigid-plastic frictional Cosserat model that captures thin shear layers by incorporating a microscopic length scale. We treat the granular medium as a Cosserat continuum, which allows the existence of localised couple stresses and, therefore, the possibility of an asymmetric stress tensor. In addition, the local rotation is an independent field variable and is not necessarily equal to the vorticity. The angular momentum balance, which is implicitly satisfied for a classical continuum, must now be solved in conjunction with the linear momentum balances. We extend the critical state model, used in soil plasticity, for a Cosserat continuum and obtain predictions for flow in plane and cylindrical Couette devices. The velocity profile predicted by our model is in qualitative agreement with available experimental data. In addition, our model can predict scaling laws for the shear layer thickness as a function of the Couette gap, which must be verified in future experiments. Most significantly, our model can determine the velocity field in viscometric flows, which classical plasticity-based model cannot.

A General Route to Nanoparticle Thin Films and Coatings

Nanoparticles thin films have wide range of applications such as nanoelectronics, magnetic storage devices, SERS substrate fabrication, optical grating and antireflective coating. Present work describes a method to prepare large area nanoparticles thin film of the order of few square centimeters. Thin film deposition has been done successfully on a wide range of conducting as well as non conducting substrates such as carbon-coated copper grid, silicon, m-plane of alumina, glass and (100) plane of NaCl single crystal. SEM, TEM and AFM studies have been done for microstructural characterization of the thin films. A basic mechanism has been proposed towards the understanding of the deposition process.

Dielectric Studies of laser ablated Ca doped BaTiO3 thin films

Recently, there has been growing interest in Ca modified BaTiO3 structures due to their larger electro-optic coefficients for their use in optical storage of information over conventional BaTiO3 crystals. Barium Calcium Titanate (BCT) shows promising applications in advanced laser systems, optical interconnects and optical storage devices. BaTiO3 thin films of varied Ca (3 at. % - 15 at. %) doping were deposited using pulsed laser ablation (KrF excimer laser) technique over Pt/Si substrates. The stoichiometric and the compositional analysis were carried out using EDAX and SIMS. The dielectric studies were done at the frequency regime of 40 Hz to 100 kHz at different ambient temperatures from 200 K to 600 K. The BCT thin films exhibited diffuse phase transition, which was of a typical non lead relaxor behavior and had high dielectric constant and low dielectric loss. The phase transition for the different compositions of BCT thin films was near the room temperature, showing a marked departure from the bulk phase transition. The C - V and the hysteresis behavior confirmed the ferroelectric nature below the phase transition and paraelectric at the room temperature.