目标反射特性对激光测距的影响

针对非合作小目标激光测距系统,目标表面的反射特征对激光回波信号有很大的影响。建立测量表面双向反射分布函数(BRDF)的装置,对常用的两种热控材料——白漆涂层和F36多包层,测量了其在1064 nm波长下的双向反射分布函数。得出了白漆涂层镜面反射很小,散射角较大,利于各方向接收回波信号;而F36多包层镜面反射很强,散射角-2°~2°,不利于探测。通过由表面BRDF与由朗伯散射计算得到的最小接收功率的比较,得出了入射角大于45°入射白漆涂层时,回波信号较小;大于2°入射F36多包层时,没有回波信号。

Extended bidirectional reflectance distribution function for polarized light scattering from subsurface defects under a smooth surface

By introducing the scattering probability of a subsurface defect (SSD) and statistical distribution functions of SSD radius, refractive index, and position, we derive an extended bidirectional reflectance distribution function (BRDF) from the Jones scattering matrix. This function is applicable to the calculation for comparison with measurement of polarized light-scattering resulting from a SSD. A numerical calculation of the extended BRDF for the case of p-polarized incident light was performed by means of the Monte Carlo method. Our numerical results indicate that the extended BRDF strongly depends on the light incidence angle, the light scattering angle, and the out-of-plane azimuth angle. We observe a 180 degrees symmetry with respect to the azimuth angle. We further investigate the influence of the SSD density, the substrate refractive index, and the statistical distributions of the SSD radius and refractive index on the extended BRDF. For transparent substrates, we also find the dependence of the extended BRDF on the SSD positions. (c) 2006 Optical Society of America.

Transverse target single-spin asymmetry in inclusive electroproduction of charged pions and kaons

Single-spin asymmetries were investigated in inclusive electroproduction of charged pions and kaons from transversely polarized protons at the HERMES experiment. The asymmetries were studied as a function of the azimuthal angle psi about the beam direction between the target-spin direction and the hadron production plane, the transverse hadron momentum P-T relative to the direction of the incident beam, and the Feynman variable x(F). The sin psi* amplitudes are positive for pi(+) and K+ slightly negative for pi(-) and consistent with zero for K-, with particular P-T but weak x(F) dependences. Especially large asymmetries are observed for two small subsamples of events, where also the scattered electron was recorded by the spectrometer. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.

The influence of peel angle on the mechanics of peeling flexible adherends with arbitrary load-extension characteristics

The peel test is commonly used to determine the strength of adhesive joints. In its simplest form, a thin flexible strip which has been bonded to a rigid surface is peeled from the substrate at a constant rate and the peeling force which is applied to the debonding surfaces by the tension in the tape is measured. Peeling can be carried out with the peel angle, i.e. the angle made by the peel force with the substrate surface, from any value above about 10° although peeling tests at 90 and 180° are most common. If the tape is sufficiently thin for its bending resistance to be negligibly small then as well as the debonding or decohesion energy associated with the adhesive in and around the point of separation, the relation between the peeling force and the peeling angle is influenced both by the mechanical properties of the tape and any pre-strain locked into the tape during its application to the substrate. The analytic solution for a tape material which can be idealised as elastic perfectly-plastic is well established. Here, we present a more general form of analysis, applicable in principle to any constitutive relation between tape load and tape extension. Non-linearity between load and extension is of increasing significance as the peel angle is decreased: the model presented is consistent with existing equations describing the failure of a lap joint between non-linear materials. The analysis also allows for energy losses within the adhesive layer which themselves may be influenced by both peel rate and peel angle. We have experimentally examined the application of this new analysis to several specific peeling cases including tapes of cellophane, poly-vinyl chloride and PTFE. © 2005 Elsevier Ltd. All rights reserved.

Multidirectional scattering models for 3-dimensional ultrasound imaging

An ultrasound image is created from backscattered echoes originating from both diffuse and directional scattering. It is potentially useful to separate these two components for the purpose of tissue characterization. This article presents several models for visualization of scattering fields on 3-dimensional (3D) ultrasound imaging. By scanning the same anatomy from multiple directions, we can observe the variation of specular intensity as a function of the viewing angle. This article considers two models for estimating the diffuse and specular components of the backscattered intensity: a modification of the well-known Phong reflection model and an existing exponential model. We examine 2-dimensional implementations and also propose novel 3D extensions of these models in which the probe is not constrained to rotate within a plane. Both simulation and experimental results show that improved performance can be achieved with 3D models. © 2013 by the American Institute of Ultrasound in Medicine.

Nonequilibrium dynamics of photoexcited electrons in graphene: Collinear scattering, Auger processes, and the impact of screening

We present a combined analytical and numerical study of the early stages (sub-100-fs) of the nonequilibrium dynamics of photoexcited electrons in graphene. We employ the semiclassical Boltzmann equation with a collision integral that includes contributions from electron-electron (e-e) and electron-optical phonon interactions. Taking advantage of circular symmetry and employing the massless Dirac fermion (MDF) Hamiltonian, we are able to perform an essentially analytical study of the e-e contribution to the collision integral. This allows us to take particular care of subtle collinear scattering processes - processes in which incoming and outgoing momenta of the scattering particles lie on the same line - including carrier multiplication (CM) and Auger recombination (AR). These processes have a vanishing phase space for two-dimensional MDF bare bands. However, we argue that electron-lifetime effects, seen in experiments based on angle-resolved photoemission spectroscopy, provide a natural pathway to regularize this pathology, yielding a finite contribution due to CM and AR to the Coulomb collision integral. Finally, we discuss in detail the role of physics beyond the Fermi golden rule by including screening in the matrix element of the Coulomb interaction at the level of the random phase approximation (RPA), focusing in particular on the consequences of various approximations including static RPA screening, which maximizes the impact of CM and AR processes, and dynamical RPA screening, which completely suppresses them. © 2013 American Physical Society.

Polarization dependence of double resonant Raman scattering band in bilayer graphene

The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polarization dependence study, however, we reveal that each of the four different peaks is actually doubly degenerate in its scattering channels, i.e., two different scattering paths with similar Raman frequency shifts for each peak. We find theoretically that one of these two paths, ignored for a long time, has a small contribution to their scattering intensities but are critical in understanding their polarization dependences. Because of this, the maximum-to-minimum intensity ratios of the four peaks show a strong dependence on the excitation energy, unlike the case of single-layer graphene (SLG). Our findings thus reveal another interesting aspect of electron-phonon interactions in graphitic systems. © 2014 Elsevier Ltd. All rights reserved.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes. The FLA Raman spectra are analyzed and modeled with respect to mode frequencies and the spectral envelope of mode intensities. The deduced average superlattice properties are consistent with results from atomic force microscopy. The simple Rytov model used for Si/Ge layer structures reproduces very well the frequencies of the FLA modes up to 150 cm(-1). The nonlinearity of phonon dispersion curves in bulk Si for large momenta, however, becomes important for modeling the higher frequencies of observed FLA modes up to 22nd order. The effective dot layer width and an activation energy for thermal intermixing of 2.1+/-0.2 eV are determined from the spectral envelopes of FLA mode intensities of as-grown and annealed Si/Ge dot multilayers. (C) 2004 American Institute of Physics.

Detect the sub-wavelength data by applying a very-small-aperture laser

We present a theoretical and experimental research about applying a very-small-aperture laser (VSAL) to detect sub-wavelength data. Near-field distribution of a VSAL, which is essential for the application of such near-field devices, will be affected by the sample or fiber posited in the near-field region of the aperture. When the device is applied to detect the sub-wavelength data, the real resolution depends on the near-field spot size, the divergent angle of the beam and the distance from the aperture to the sample. Experimental results, including the near-field detection of the spot and detection of the sub-wavelength data by using the VSAL, are presented in this paper. We realize the two dimensional scanning about the sub-wavelength data (with the width 600 nm) by employing a VSAL with a 300 nm x 300 nm aperture.

Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy

The microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-Si:H) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by Raman scattering and infrared absorption spectroscopy. The high stability a-Si:H films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, Besides, the hydrogen distribution is very inhomogeneous. Some of these results are substantially distinct from those of conventional device-quality n-Si:H film or stable cr-Si:H films prepared by the other techniques examined to date. The stability of n-Si:H films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. The ideal n-Si:H network with high stability and low defect density is perhaps not homogeneous. (C) 1998 American Institute of Physics.

Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

Small-divergence singlemode emitting tapered distributed-feedback quantum cascade lasers

A tapered distributed feedback quantum cascade laser emitting at lambda similar to 8.1 mu m is reported. Utilising a tapered waveguide structure with a surface metal grating, the device exhibited singlemode operation over the temperature range of 100 to 214 K, with sidemode suppression ratio > 20 dB and a nearly diffraction limited far-field beam divergence angle of 5.4 degrees.