Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Chaos of liquid surface waves in a vessel under vertical excitation with slowly modulated amplitude

Free surface waves in a cylinder of liquid under vertical excitation with slowly modulated amplitude are investigated in the current paper. It is shown by both theoretical analysis and numerical simulation that chaos may occur even for a single mode with modulation which can be used to explain Gollub and Meyer's experiment. The implied resonant mechanism accounting for this phenomenon is further elucidated.

Dynamic-response of a laminated plate with friction damping

湍流不同尺度间的近程和共振作用规律及应用

从Navier-Stokes方程出发,研究了湍流不同尺度间的相互作用规律,给出相近尺度间近程粘性应力的积分和微分表达式.引入极相近尺度之间共振相互作用的概念,得到共振粘性应力的微分表达式.利用共振粘性应力张量获得不含经验关系和常数、近似封闭的大涡模拟(LES)方程组.利用近程和共振粘性应力张量获得不含经验关系和常数、近似封闭的湍流多尺度方程组.讨论了湍流多尺度方程的性质及用于湍流计算的优点,尺度间相互作用的近程特性说明:多尺度模拟是湍流计算很有价值的方法,并列举了算例.

Interface electronics for an RF resonance-based displacement sensor

6 p. Paper of the 17th Conference on Sensors and Their Applications held in Dubrovnik, Croatia. Sep 16-18, 2013

Design, analysis and implementation of a versatile low level radio frequency system for accelerating cavities

179 p.

A Wide Band Strong Acoustic Absorption in a Locally Network Anechoic Coating

Composite materials with interpenetrating network structures usually exhibit unexpected merit due to the cooperative interaction. Locally resonant phononic crystals (LRPC) exhibit excellent sound attenuation performance based on a periodical arrangement of sound wave scatters. Inspired by the interpenetrating network structure and the LRPC concept, we develop a locally network anechoic coating (LNAC) that can achieve a wide band of underwater strong acoustic absorption. The experimental results show that the LNAC possesses an excellent underwater acoustic absorbing capacity in a wide frequency range. Moreover, in order to investigate the impact of the interpenetrating network structure, we fabricate a faultage structure sample and the network is disconnected by hard polyurethane (PU). The experimental comparison between the LNAC and the faultage structure sample shows that the interpenetrating network structure of the LNAC plays an important role in achieving a wide band strong acoustic absorption.

A Dynamic Model For Ice-Induced Vibration Of Structures

A dynamic model for the ice-induced vibration (IIV) of structures is developed in the present study. Ice properties have been taken into account, such as the discrete failure, the dependence of the crushing strength on the ice velocity, and the randomness of ice failure. The most important prediction of the model is to capture the resonant frequency lock-in, which is analog to that in the vortex-induced vibration. Based on the model, the mechanism of resonant IIV is discussed. It is found that the dependence of the ice crushing strength on the ice velocity plays an important role in the resonant frequency lock-in of IIV. In addition, an intermittent stochastic resonant vibration is simulated from the model. These predictions are supported by the laboratory and field observations reported. The present model is more productive than the previous models of IIV.

Ejection of energetic photoelectrons in laser-induced autoionisation: effects of high-order ionisation processes

Resonant interaction of an autoionising state with a strong laser field is considered and effects of second-order ionisation processes are investigated. The authors show that these processes play a very important role in laser-induced autoionisation (LIA). They drastically affect the lowest-order peaks in the photoelectron spectrum. In addition to these peaks, high-order peaks due to ejection of energetic photoelectrons appear. For the laser intensities of current interest, second-order peaks are much stronger than the original ones, an important result that, they believe, can be observed experimentally. Moreover, `peak switching', a general feature of above-threshold ionisation, is also manifest in the electron spectrum of LIA.

A perturbation procedure for nonlinear oscillations (The dynamics of two oscillators with weak nonlinear coupling)

This thesis considers in detail the dynamics of two oscillators with weak nonlinear coupling. There are three classes of such problems: non-resonant, where the Poincaré procedure is valid to the order considered; weakly resonant, where the Poincaré procedure breaks down because small divisors appear (but do not affect the O(1) term) and strongly resonant, where small divisors appear and lead to O(1) corrections. A perturbation method based on Cole's two-timing procedure is introduced. It avoids the small divisor problem in a straightforward manner, gives accurate answers which are valid for long times, and appears capable of handling all three types of problems with no change in the basic approach.

One example of each type is studied with the aid of this procedure: for the nonresonant case the answer is equivalent to the Poincaré result; for the weakly resonant case the analytic form of the answer is found to depend (smoothly) on the difference between the initial energies of the two oscillators; for the strongly resonant case we find that the amplitudes of the two oscillators vary slowly with time as elliptic functions of ϵ t, where ϵ is the (small) coupling parameter.

Our results suggest that, as one might expect, the dynamical behavior of such systems varies smoothly with changes in the ratio of the fundamental frequencies of the two oscillators. Thus the pathological behavior of Whittaker's adelphic integrals as the frequency ratio is varied appears to be due to the fact that Whittaker ignored the small divisor problem. The energy sharing properties of these systems appear to depend strongly on the initial conditions, so that the systems not ergodic.

The perturbation procedure appears to be applicable to a wide variety of other problems in addition to those considered here.

Effects of spontaneously induced coherence on absorption of a ladder-type atom

This paper investigates the effects of spontaneously induced coherence on absorption properties in a nearly equispaced three-level ladder-type system driven by two coherent fields. It find that the absorption properties of this system with the probe field applied on the lower transition can be significantly modified if this coherence is optimized. In the case of small spontaneous decay rate in the upper excited state, it finds that such coherence does not destroy the electromagnetically induced transparency (EIT). Nevertheless, the absorption peak on both sides of zero detuning and the linewidth of absorption line become larger and narrower than those in the case corresponding to the effects of spontaneously induced coherence; while in the case of large decay rate, it finds that, instead of EIT with low resonant absorption, a sharp absorption peak at resonance appears. That is, electromagnetically induced absorption in the nearly equispaced ladder-type system can occur due to such coherent effects.

Investigation of transient process and steady output of lasing without inversion

The transient evolution processes and steady outputs of continuous wave lasing without inversion (LWI) and self-pulsing LWI in a resonant open V type three-level system are studied. It was found that the two kinds of LWI have some obvious differences not only from the steady outputs but also from the transient evolution processes. The effects of the unsaturated gain coefficient, cavity loss coefficient, ratio of the atomic injection rates and atomic exit rate on the transient evolution processes and steady outputs are discussed.

Growth and characterization of novel, III-V semiconductor heterostructures

The material presented in this thesis concerns the growth and characterization of III-V semiconductor heterostructures. Studies of the interactions between bound states in coupled quantum wells and between well and barrier bound states in AlAs/GaAs heterostructures are presented. We also demonstrate the broad array of novel tunnel structures realizable in the InAs/GaSb/AlSb material system. Because of the unique broken-gap band alignment of InAs/GaSb these structures involve transport between the conduction- and valence-bands of adjacent layers. These devices possess a wide range of electrical properties and are fundamentally different from conventional AlAs/GaAs tunnel devices. We report on the fabrication of a novel tunnel transistor with the largest reported room temperature current gains. We also present time-resolved studies of the growth fronts of InAs/GainSb strained layer superlattices and investigations of surface anion exchange reactions.

Chapter 2 covers tunneling studies of conventional AlAs/GaAs RTD's. The results of two studies are presented: (i) A test of coherent vs. sequential tunneling in triple barrier heterostructures, (ii) An optical measurement of the effect of barrier X-point states on Γ-point well states. In the first it was found if two quantum wells are separated by a sufficiently thin barrier, then the eigenstates of the system extend coherently across both wells and the central barriers. For thicker barriers between the wells, the electrons become localized in the individual wells and transport is best described by the electrons hopping between the wells. In the second, it was found that Γ-point well states and X-point barrier states interact strongly. The barrier X-point states modify the energies of the well states and increase the escape rate for carriers in the quantum well.

The results of several experimental studies of a novel class of tunnel devices realized in the InAs/GaSb/AlSb material system are presented in Chapter 3. These interband tunnel structures involve transport between conduction- and valence-band states in adjacent material layers. These devices are compared and contrasted with the conventional AlAs/GaAs structures discussed in Chapter 2 and experimental results are presented for both resonant and nonresonant devices. These results are compared with theoretical simulations and necessary extensions to the theoretical models are discussed.

In chapter 4 experimental results from a novel tunnel transistor are reported. The measured current gains in this transistor exceed 100 at room temperature. This is the highest reported gain at room temperature for any tunnel transistor. The device is analyzed and the current conduction and gain mechanisms are discussed.

Chapters 5 and 6 are studies of the growth of structures involving layers with different anions. Chapter 5 covers the growth of InAs/GainSb superlattices for far infrared detectors and time resolved, in-situ studies of their growth fronts. It was found that the bandgap of superlattices with identical layer thicknesses and compositions varied by as much as 40 meV depending on how their internal interfaces are formed. The absorption lengths in superlattices with identical bandgaps but whose interfaces were formed in different ways varied by as much as a factor of two. First the superlattice is discussed including an explanation of the device and the complications involved in its growth. The experimental technique of reflection high energy electron diffraction (RHEED) is reviewed, and the results of RHEED studies of the growth of these complicated structures are presented. The development of a time resolved, in-situ characterization of the internal interfaces of these superlattices is described. Chapter 6 describes the result of a detailed study of some of the phenomena described in chapter 5. X-ray photoelectron spectroscopy (XPS) studies of anion exchange reactions on the growth fronts of these superlattices are reported. Concurrent RHEED studies of the same physical systems studied with XPS are presented. Using the RHEED and XPS results, a real-time, indirect measurement of surface exchange reactions was developed.

Three-dimensional supercell simulation of novel semiconductor nanostructures

In this thesis we investigate atomic scale imperfections and fluctuations in the quantum transport properties of novel semiconductor nanostructures. For this purpose, we have developed a numerically efficient supercell model of quantum transport capable of representing potential variations in three dimensions. This flexibility allows us to examine new quantum device structures made possible through state-of-the-art semiconductor fabrication techniques such as molecular beam epitaxy and nanolithography. These structures, with characteristic dimensions on the order of a few nanometers, hold promise for much smaller, faster and more efficient devices than those in present operation, yet they are highly sensitive to structural and compositional variations such as defect impurities, interface roughness and alloy disorder. If these quantum structures are to serve as components of reliable, mass-produced devices, these issues must be addressed.

In Chapter 1 we discuss some of the important issues in resonant tunneling devices and mention some of thier applications. In Chapters 2 and 3, we describe our supercell model of quantum transport and an efficient numerical implementation. In the remaining chapters, we present applications.

In Chapter 4, we examine transport in single and double barrier tunneling structures with neutral impurities. We find that an isolated attractive impurity in a single barrier can produce a transmission resonance whose position and strength are sensitive to the location of the impurity within the barrier. Multiple impurities can lead to a complex resonance structure that fluctuates widely with impurity configuration. In addition, impurity resonances can give rise to negative differential resistance. In Chapter 5, we study interface roughness and alloy disorder in double barrier structures. We find that interface roughness and alloy disorder can shift and broaden the n = 1 transmission resonance and give rise to new resonance peaks, especially in the presence of clusters comparable in size to the electron deBroglie wavelength. In Chapter 6 we examine the effects of interface roughness and impurities on transmission in a quantum dot electron waveguide. We find that variation in the configuration and stoichiometry of the interface roughness leads to substantial fluctuations in the transmission properties. These fluctuations are reduced by an attractive impurity placed near the center of the dot.

Spectral effects for an ultrashort pulse train propagating in a two-level atom medium

We investigate the spectra of a femtosecond pulse train propagating in a resonant two-level atom (TLA) medium. it is found that higher spectral components can be produced even for a 2 pi femtosecond pulse train. Furthermore, the spectral effects depend crucially on both the relative shift phi and the delay time tau between the successive pulses of the femtosecond pulse train.