974 resultados para Markov Regime Switching


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This paper discusses the application of hybrid model predictive control to control switching between different burner modes in a novel compact marine boiler design. A further purpose of the present work is to point out problems with finite horizon model predictive control applied to systems for which the optimal solution is a limit cycle. Regarding the marine boiler control the aim is to find an optimal control strategy which minimizes a trade-off between deviations in boiler pressure and water level from their respective setpoints while limiting burner switches.The approach taken is based on the Mixed Logic Dynamical framework. The whole boiler systems is modelled in this framework and a model predictive controller is designed. However to facilitate on-line implementation only a small part of the search tree in the mixed integer optimization is evaluated to find out whether a switch should occur or not. The strategy is verified on a simulation model of the compact marine boiler for control of low/high burner load switches. It is shown that even though performance is adequate for some disturbance levels it becomes deteriorated when the optimal solution is a limit cycle. Copyright © 2007 International Federation of Automatic Control All Rights Reserved.

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We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched “on” and “off” reversibly in 600 µs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times.

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The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable stress on the device and increases the transient power dissipation. A precise comparison of switching behaviour of Si and SiC devices on similar terms is the novelty of our work. The cascode is found to be an attractive fast switching device, capable of operating in two different configurations whose switching equivalent circuits are proposed here. The effect of limited dv/dt of the Si-MOSFET on the switching of the SiC-JFET in a cascode is also critically analysed.

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We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched on and off reversibly in 600 μs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times. © 2011 American Institute of Physics.

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We report on novel liquid crystals with extremely large flexoelectric coefficients in a range of ultra-fast photonic modes, namely 1) the uniform lying helix, that leads to in-plain switching, birefringence phase devices with 100 μs switching times at low fields, i.e.2-5 V/μm, and analogue or grey scale capability, 2) the uniform standing helix, using planar surface alignment and in-plane fields, with sub ms response times and optical contrasts in excess of 5000:1 with a perfect optically isotropic or black "off state", 3) the wide temperature range blue phase that leads to field controlled reflective color, 4) chiral nematic optical reflectors electric field tunable over a wide wavelength range and 5) high slope efficiency, wide wavelength range tunable narrow linewidth microscopic liquid crystal lasers. © 2011 Materials Research Society.

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This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.