Absence of room-temperature ferromagnetism in Al-codoped Zn0.95Co0.05O nanoparticles

Nanocrystalline Zn0.95-xCo0.05AlxO (x=0, 0.01, 0.05) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicated that Al-doped Zn0.95Co0.05O samples had the pure wurtzite structure. X-ray absorption spectroscopy, high-resolution transmission electron microscope, energy dispersive spectrometer and Co 2p core-level photoemission spectroscope analyses indicated that Co2+ substituted for Zn2+ without forming any secondary phases or impurities. Resistance measurements showed that the resistance values of Co and Al codoped samples were still so large in the giga magnitude. Magnetic investigations showed that nanocrystalline Al-doped Zn0.95Co0.05O samples had no indication of room temperature ferromagnetism. (C) 2007 Elsevier B.V. All rights reserved.

Nuevos materiales arqueológicos de la cueva de «El Arco B» (Ramales de la Victoria, Cantabria)

[ES] Se presentan un colgante lítico decorado y una placa caliza con pintura localizados en la cueva de El Arco B. Ambas piezas fueron recuperadas en superficie, sin un contexto estratigráfico preciso. La evaluación de la materia prima, de la morfología del soporte y de la decoración del colgante apuntan a considerar, como probable, su pertenencia al Paleolítico superior inicial. La placa decorada no encuentra paralelos claros en el frente cantábrico, por lo cual no es posible precisar más allá de una genérica adscripción al Paleolítico superior. Los materiales arqueológicos y las pinturas rojas ya conocidos, y las nuevas evidencias aquí presentadas, apuntan a considerar el yacimiento de El Arco B como un importante centro de hábitat y de creación artística.

Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC

Al2O3/SiO2 films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al2O3/SiO2 films is 0.33% and 10 times lower than that of a thermally grown SiO2 single layer at 276 nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO2 and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al2O3/SiO2 films as antireflection coatings. (C) 2007 Elsevier B.V. All rights reserved.

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.

Transcripción de la conversación por teletipo entre el Presidente de Euzkadi y Francisco Ciutat con relación al estado de la guerra

Sin fecha (1937) / Unidad de ínstalación: Carpeta Rectorado - B-3 / Nº de pág.: 1 (mecanografiada)

Transcripción de la conversación con teletipo entre Francisco Ciutat y el Presidente de Euzkadi con relación al estado de la Guerra Civil

Sin fecha (1937) / Unidad de ínstalación: Carpeta Rectorado - B-5 y 6 / Nº de pág.: 1 (escrita por las dos caras). Mecanografiada

Comparison of the Transcriptional Profiles of Melanocytes from Dark and Light Skinned Individuals under Basal Conditions and Following Ultraviolet-B Irradiation

We analysed the whole-genome transcriptional profile of 6 cell lines of dark melanocytes (DM) and 6 of light melanocytes (LM) at basal conditions and after ultraviolet-B (UVB) radiation at different time points to investigate the mechanisms by which melanocytes protect human skin from the damaging effects of UVB. Further, we assessed the effect of different keratinocyte-conditioned media (KCM+ and KCM-) on melanocytes. Our results suggest that an interaction between ribosomal proteins and the P53 signaling pathway may occur in response to UVB in both DM and LM. We also observed that DM and LM show differentially expressed genes after irradiation, in particular at the first 6h after UVB. These are mainly associated with inflammatory reactions, cell survival or melanoma. Furthermore, the culture with KCM+ compared with KCM- had a noticeable effect on LM. This effect includes the activation of various signaling pathways such as the mTOR pathway, involved in the regulation of cell metabolism, growth, proliferation and survival. Finally, the comparison of the transcriptional profiles between LM and DM under basal conditions, and the application of natural selection tests in human populations allowed us to support the significant evolutionary role of MIF and ATP6V0B in the pigmentary phenotype.

Contribución al estudio biológico de Loligo brasiliensis Bl

A total of 592 individuals of Loligo brasiliensis from the Mar del Plata coastal fishing area (Buenos Aires prov., Argentina) have been studied during the 1961-1964 period. From a morphological point of view the population appears to be uniform and homogeneus. A brief description of this species is given in this paper since references in the literature are scarce from the time at which Blainville (1923) first described it. The only further references are found in D'Orbigny (1835), and Ferrusac (1839), and in Hoyle (1886), and Tyron Pilsbry (1879). In this paper the species was mentioned only as a bibliographical reference on morphological or biological conditions has been found in the literature. The distribution of this species ranges from Cuba, Brazil, Uruguay to the Argentine coast, probably down to the Gulf of San Jorge. The samples had been studied with respect to various body measurements by classifing the individuals in total length classes, since body length was considered the most significant measurement. The condition factor K has been calculated for different sexes and ages, for the various length classes. The results lead to the conclusion that the smaller the length the higher is the value obtained for K and viceversa. This is due to the fact that the length of the tentacle increases considerably with increasing size. Since the tentacle are quite light the factor K diminishes accordingly. The condition factor increases considerably from December to April with an average of 0.42, decrease and becomes stable from March to October, with an average of 0.30. This is a consequence of the ripening of the sex glands. The sex-ratios are as following: year 1961, 42 % female, 42 % male; year 1962, 51 % female, 45 % male; year 1963, 46 % female, 53 % male; year 1964, 26 % female, 42 % male, 32 % indif. The great percentage of 72 undifferentiated young individuals in the 1964 (March) sampling increases the ratio of undifferentiation. A short morphological description of both ovules and spermatozoos is given. An examination of the sex glands leads to the following conclusions: a) male and female sex gland in a preparatory stage during the whole year; b) the highest percentage of ripe glands is found through, November-March; e) the spawning appears to precede rather slowly, but this certain since the spawning environment does not coincide with the natural habitat of the species. Few spawning individuals were found; d) sexual differentiation begins at body lenght from 30 to 40 mm; i.e. a total length of approximately 145 mm. At a body length of 70 mm. the hectocotilication (sexual character) begins to appear. In June 1962, a sample gathered at Rawson (Chubut) was analyzed. The conclusion was reached that the sex glands in this population are in an earlier stage of development in comparison with those from the Mar del Plata area. Also the average for the factor K which were found to be 0.17 for females and 0.19 for male, are rather low for that date. These physiological facts are possibly related to morphological differences which will be pointed out in a forthcoming publication. Some very typical associations with Artemesia longinaris and Percophis brasiliensis were found. Cannibalism has been observed.

High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates

We studied the structural and optical properties of high Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Direct evidences of the gradual evolution of the content of Al, Ga and In along the growth direction were obtained. When the film thickness was over a certain value, however, the AlInGaN epilayer with constant element contents began to form. These results were also supported by the blue shift and splitting of the photoluminescence (PL) peak. For the thinnest epilayer, the surface was featured with outcrops of threading dislocations (TDs) which suggested a spiral growth mode. With increase in thickness, step-flow growth mode and V-shaped pits were observed, and the steps terminated at the pits. (C) 2008 Elsevier B. V. All rights reserved.

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

We have investigated the optical properties of AlGaN grown on sapphire. It is found that two main luminescence peaks occur in the cathodoluminescence (CL) spectra of AlGaN films, and their energy separation increases with the increase of Al source flux during the growth. Spatially resolved CL investigations have shown that the line splitting is a result of variation of AlN mole fraction within the layer. The Al composition varies in both lateral and vertical direction. It is suggested that the difference in the surface mobility of Al and Ga atoms, especially, its strong influence on the initial island coalescence process and the formation of island-like regions on the uneven film surface, is responsible for the Al composition inhomogeneity. (C) 2008 Elsevier B.V. All rights reserved.

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown by metalorganic chemical vapor deposition on Si(111) substrates, has been investigated. By optimizing the N/Al ratio during the AlN buffer, the threading dislocation density and the tensile stress have been decreased. High-resolution X-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. The variations of the tensile stress existing in the GaN films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 K. (C) 2003 Elsevier B.V. All rights reserved.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is investigated. With the increase of trimethylalluminum (TMAl) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. An interesting phenomenon is that the growth rate of AlGaN decrease with increasing TMAl flux, which is opposite to the AlN growth rate dependence on the TMAl flux. All these effects are attributed to the different properties of At atoms due to the higher bond strength of Al-N compared with Ga-N, which lead to lower surface mobility and stronger competitive ability of Al atoms during the growth. The enhancement of the surface mobility of Al is especially important for improving the quality of AlGaN. (c) 2006 Elsevier B.V. All rights reserved.