Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al 2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al 2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al 2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.

Spintronics with graphene

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents. © Copyright 2012 Materials Research Society.

Comparison of bleed and micro-vortex generator effects on supersonic boundary-layers

An experimental study of bleed and vortex generators in supersonic ow has been conducted. Methods were developed to analyze and directly compare the two systems' effects on turbulent boundary layers to better understand their potential to mitigate ow separation. LDA was used to measure two components of velocity in the boundary-layer for three cases|baseline, with bleed, or with a VG|at Mach numbers of 1.3, 1.5 and 1.8. The bleed system was comprised of a series of 2mm diameter normal holes operated at different suction rates, removing up to 10% of the incoming boundary layer. Three VG shapes were tested only at Mach 1.5 and 1.8. Measurements of the evolution of Hi and Cf downstream of each device indicate that Hi is not an appropriate parameter to gauge the effectiveness of vortex generators due to boundary layer wake distortion. The skin friction coeficient Cf may be a more appropriate measure. Similar increases in Cf were generated by VGs and bleed. The recovery to baseline conditions downstream of bleed was sensitive to Mach number, and more investigation of that effect will be required. Copyright © 2012 by University of Cambridge.

2 μm solid-state laser mode-locked by single-layer graphene

We report a 2 μm ultrafast solid-state Tm: Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited ∼ 410 fs pulses, with a spectral width ∼ 11.1 nm at 2067 nm. The maximum average output power is 270 mW, at a pulse repetition frequency of 110 MHz. This is a convenient high-power transform-limited ultrafast laser at 2 μm for various applications, such as laser surgery and material processing. © 2013 American Institute of Physics.

Production and processing of graphene and 2d crystals

Graphene is at the center of an ever growing research effort due to its unique properties, interesting for both fundamental science and applications. A key requirement for applications is the development of industrial-scale, reliable, inexpensive production processes. Here we review the state of the art of graphene preparation, production, placement and handling. Graphene is just the first of a new class of two dimensional materials, derived from layered bulk crystals. Most of the approaches used for graphene can be extended to these crystals, accelerating their journey towards applications. © 2012 Elsevier Ltd.

Multi-hit armour characterisation of metal-composite bi-layers

The ballistic performance of equi-mass plates made from (i) stainless steel (SS); (ii) carbon fibre/epoxy (CF) laminate and (iii) a hybrid plate of both materials has been characterised for a spherical steel projectile. The hybrid plate was orientated with steel on the impact face (SSCF) and on the distal face (CFSS). The penetration velocity (V 50) was highest for the SS plate and lowest for the CF plate. A series of double impact tests were performed, with an initial velocity V I and a subsequent velocity V II at the same impact site. An interaction diagram in (V I,V II) space was constructed to delineate penetration from survival under both impacts. The degree of interaction between the two impact events was greater for the CFSS plate than for the SSCF plate, implying that the distal face has the major effect upon the degree of interaction.

Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu

An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient. © 2013 American Institute of Physics.

Nanowire and graphene architectures for room temperature THz detection

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10-11 W/Hz1/2, and high-speed response. © 2012 IEEE.