884 resultados para Fields of Formal Power Series


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We have measured the longitudinal power distribution inside a random distributed feedback Raman fiber laser. The observed distribution has a sharp maximum whose position depends on pump power. The spatial distribution profiles are different for the first and the second Stokes waves. Both analytic solution and results of direct numerical modeling are in excellent agreement with experimental observations. © 2012 Optical Society of America.

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This paper describes the basic tools for a real-time decision support system of a semiotic type on the example of the prototype for management and monitoring of a nuclear power block implemented on the basis of the tool complex G2+GDA using cognitive graphics and parallel processing. This work was supported by RFBR (project 02-07-90042).

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We report the impact of longitudinal signal power profile on the transmission performance of coherently-detected 112 Gb/s m-ary polarization multiplexed quadrature amplitude modulation system after compensation of deterministic nonlinear fibre impairments. Performance improvements up to 0.6 dB (Q(eff)) are reported for a non-uniform transmission link power profile. Further investigation reveals that the evolution of the transmission performance with power profile management is fully consistent with the parametric amplification of the amplified spontaneous emission by the signal through four-wave mixing. In particular, for a non-dispersion managed system, a single-step increment of 4 dB in the amplifier gain, with respect to a uniform gain profile, at similar to 2/3(rd) of the total reach considerably improves the transmission performance for all the formats studied. In contrary a negative-step profile, emulating a failure (gain decrease or loss increase), significantly degrades the bit-error rate.

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The frequency dependent radio frequency power degradation in direct modulated microwave photonic systems employing uniform period fiber Bragg gratings (FBG) as reflective elements in investigated. Results show implications in terms of the available radio frequency bandwidth and the stability requirements for the FBG.

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Mathematics Subject Classification: Primary 33E20, 44A10; Secondary 33C10, 33C20, 44A20

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Mathematics Subject Classification: 33C05, 33C10, 33C20, 33C60, 33E12, 33E20, 40A30

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Mathematics Subject Classification: 26A33, 33C60, 44A15

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Recently Garashuk and Lisonek evaluated Kloosterman sums K (a) modulo 4 over a finite field F3m in the case of even K (a). They posed it as an open problem to characterize elements a in F3m for which K (a) ≡ 1 (mod4) and K (a) ≡ 3 (mod4). In this paper, we will give an answer to this problem. The result allows us to count the number of elements a in F3m belonging to each of these two classes.

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Internal quantum efficiency (IQE) of a high-brightness blue LED has been evaluated from the external quantum efficiency measured as a function of current at room temperature. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined separately IQE of the LED structure and light extraction efficiency (LEE) of UX:3 chip. Full text Nowadays, understanding of LED efficiency behavior at high currents is quite critical to find ways for further improve­ment of III-nitride LED performance [1]. External quantum ef­ficiency ηe (EQE) provides integral information on the recom­bination and photon emission processes in LEDs. Meanwhile EQE is the product of IQE ηi and LEE ηext at negligible car­rier leakage from the active region. Separate determination of IQE and LEE would be much more helpful, providing correla­tion between these parameters and specific epi-structure and chip design. In this paper, we extend the approach of [2,3] to the whole range of the current/optical power variation, provid­ing an express tool for separate evaluation of IQE and LEE. We studied an InGaN-based LED fabricated by Osram OS. LED structure grown by MOCVD on sapphire substrate was processed as UX:3 chip and mounted into the Golden Dragon package without molding. EQE was measured with Labsphere CDS-600 spectrometer. Plotting EQE versus output power P and finding the power Pm corresponding to EQE maximum ηm enables comparing the measurements with the analytical rela­tionships ηi = Q/(Q+p1/2+p-1/2) ,p = P/Pm , and Q = B/(AC) 1/2 where A, Band C are recombination constants [4]. As a result, maximum IQE value equal to QI(Q+2) can be found from the ratio ηm/ηe plotted as a function of p1/2 +p1-1/2 (see Fig.la) and then LEE calculated as ηext = ηm (Q+2)/Q . Experimental EQE as a function of normalized optical power p is shown in Fig. 1 b along with the analytical approximation based on the ABC­model. The approximation fits perfectly the measurements in the range of the optical power (or operating current) variation by eight orders of magnitude. In conclusion, new express method for separate evaluation of IQE and LEE of III-nitride LEDs is suggested and applied to characterization of a high-brightness blue LED. With this method, we obtained LEE from the free chip surface to the air as 69.8% and IQE as 85.7% at the maximum and 65.2% at the operation current 350 rnA. [I] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, "Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies," 1. AppL Phys., vol. 114, no. 7, pp. 071101, Aug., 2013. [2] C. van Opdorp and G. W. 't Hooft, "Method for determining effective non radiative lifetime and leakage losses in double-heterostructure las­ers," 1. AppL Phys., vol. 52, no. 6, pp. 3827-3839, Feb., 1981. [3] M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, "A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes," 1. AppL Phys., vol. 106, no. II, pp. 114508, Dec., 2009. [4] Qi Dai, Qifeng Shan, ling Wang, S. Chhajed, laehee Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, Min-Ho Kim, and Yongjo Park, "Carrier recombination mechanisms and efficiency droop in GalnN/GaN light-emitting diodes," App/. Phys. Leu., vol. 97, no. 13, pp. 133507, Sept., 2010. © 2014 IEEE.

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2000 Mathematics Subject Classification: 60J80.

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2000 Mathematics Subject Classification: 60J80, 62M05

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This article argues that for all its efforts to implement soft power techniques, the Kremlin still fails to grasp the subtle, voluntaristic essence of soft power. This is reflected in a style of public interaction that has practical implications for how Russian soft power overtures are received by the audience. This is demonstrated through the findings of mixed-method empirical research from four Ukrainian regions. Thus, while surveys show that the worldview promoted by Russian public diplomacy resonates to some extent, insights from focus groups indicate that potential attraction is nevertheless limited by Russia's 'hard' and obtrusive approach to cultural influence.

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MSC 2010: 42A32; 42A20

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2000 Mathematics Subject Classification: Primary: 11D09, 11A55, 11C08, 11R11, 11R29; Secondary: 11R65, 11S40; 11R09.

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MSC 2010: 33C20