Desenvolvimento de um sistema de gerenciamento de energia (EMS - Energy Management System) para a rede elétrica inteligente (Smart Grid)

Pós-graduação em Engenharia Elétrica - FEIS

Electrical and electrochemical measurements in nanostructured films of polythiophene derivatives

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Volt-VAR multiobjective optimization to peak-load relief and energy efficiency in distribution networks

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

An MILP model for the plug-in electric vehicle charging coordination problem in electrical distribution systems

A new mixed-integer linear programming (MILP) model is proposed to represent the plug-in electric vehicles (PEVs) charging coordination problem in electrical distribution systems. The proposed model defines the optimal charging schedule for each division of the considered period of time that minimizes the total energy costs. Moreover, priority charging criteria is taken into account. The steady-state operation of the electrical distribution system, as well as the PEV batteries charging is mathematically represented; furthermore, constraints related to limits of voltage, current and power generation are included. The proposed mathematical model was applied in an electrical distribution system used in the specialized literature and the results show that the model can be used in the solution of the PEVs charging problem.

The Brazilian Experience With the Use of the Shield Wire Line Technology (SWL) for Energy Distribution

This paper presents an analysis of the impact of the lightning overvoltages on the operational performance of the energized shield wire line technology (SWL) implemented in two locations of the State of Rondonia, Brazil. The analysis covers the periods of 1996 to 2000 (SWL Jaru) and 1997 to 2002 (SWL Itapua do Oeste), and shows that lightning is responsible for most of the system outages. The paper describes the satisfactory results achieved with the system, showing that the isolation and energization of the shield wires does not deteriorate the lightning performance of the 230 kV transmission lines. Comparisons between the performances of the SWL technology, conventional 34.5 kV lines, and thermal power plants in operation in the same region are also presented. The results demonstrate the technical and economical viability of the SWL technology and show that its application can lead to a postponement of investments.

On the electrical conductivity of Ti-implanted alumina

Ion implantation of metal species into insulators provides a tool for the formation of thin, electrically conducting, surface layers with experimenter-controlled resistivity. High energy implantation of Pt and Ti into alumina accelerator components has been successfully employed to control high voltage surface breakdown in a number of cases. In the work described here we have carried out some basic investigations related to the origin of this phenomenon. By comparison of the results of alumina implanted with Ti at 75 keV with the results of prior investigations of polymers implanted with Pt at 49 eV and Au at 67 eV, we describe a physical model of the effect based on percolation theory and estimate the percolation parameters for the Ti-alumina composite. We estimate that the percolation dose threshold is about 4 x 10(16) cm(-2) and the maximum dose for which the system remains an insulator-conductor composite is about 10 x 10(16) cm(-2). The saturation electrical conductivity is estimated to be about 50 S/m. We conclude that the observed electrical conductivity properties of Ti-implanted alumina can be satisfactorily described by percolation theory. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697900]

Improved low-voltage-ride-through capability of fixed-speed wind turbines using decentralised control of STATCOM with energy storage system

The design and implementation of a new control scheme for reactive power compensation, voltage regulation and transient stability enhancement for wind turbines equipped with fixed-speed induction generators (IGs) in large interconnected power systems is presented in this study. The low-voltage-ride-through (LVRT) capability is provided by extending the range of the operation of the controlled system to include typical post-fault conditions. A systematic procedure is proposed to design decentralised multi-variable controllers for large interconnected power systems using the linear quadratic (LQ) output-feedback control design method and the controller design procedure is formulated as an optimisation problem involving rank-constrained linear matrix inequality (LMI). In this study, it is shown that a static synchronous compensator (STATCOM) with energy storage system (ESS), controlled via robust control technique, is an effective device for improving the LVRT capability of fixed-speed wind turbines.

Electrical conductivity of silicate glasses with tetravalent cations substituting Si

The effects of substituting Si by M4+ cations in soda-lime silica glasses were analyzed by impedance spectroscopy in the frequency range of 1 Hz-1 MHz. The glass composition was (mol%) 22Na(2)O center dot 8CaO center dot 65SiO(2)center dot 5MO(2), M = Si, Ti, Ge, Zr, Sn, and Ce. Although the Na+ concentration in the glasses is constant, the Zr-containing glass exhibits the highest dc conductivity and the lowest activation energy, while the Ce-containing glass exhibits the lowest conductivity. The activation energies obtained experimentally agree with those obtained by a theoretical equation proposed by Anderson and Stuart. The differences in electrical conductivity presented by the several M-containing glasses are attributed to the effect that the M4+ ion has on the mobility of the diffusing Na+ ion. (C) 2012 Elsevier B.V. All rights reserved.

Polyazomethine with vinylene and phenantridine moieties in the main chain: Synthesis, characterization, opto(electrical) properties and theoretical calculations

The opto(electrical) properties and theoretical calculations of polyazomethine with vinylene and phenantridine moieties in the main chain were investigated in the present study. 2,5-Bis(hexyloxy)-1,4-bis[(2,5-bis(hexyloxy)-4-formyl-phenylenevinylene]benzene was polymerized in solution with 3,8-diamino-6-phenylphenanthridine (PAZ-PV-Ph). The temperatures of 5% weight loss (T-5%) of the polyazomethine was observed at 356 degrees C in nitrogen. Electrochemical properties of thin film of the polymer were studied by differential pulse voltammetry. The HOMO level of the PAZ-PV-Ph was at -4.97 eV. The energy band gap (E-g) was detected of approximately similar to 1.9 eV. Energy band gap (E-gopt) was additionally calculated from absorption spectrum and absorption coefficient alpha. The absorption UV-vis spectra of polyazomethine recorded in solution showed a blue shift in comparison with the solid state. HOMO-LUMO levels and E-g were additionally calculated theoretically by density functional theory and molecular simulations of PAZ-PV-Ph are presented. Current density-voltage (J-U) measurements were performed on ITO/PAZ-PV-Ph/Al, ITO/TiO2/PAZ-PV-Ph/Al and ITO/PEDOT/PAZ-PV-Ph:TiO2/Al devices in the dark and during irradiation with light (under illumination of 1000 W m(-2)). The polymer was tested using AFM technique and roughness (R-a, R-ms) along with skew and kurtosis are presented.

4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.

Localized potentials in electrical impedance tomography

In this work we study localized electric potentials that have an arbitrarily high energy on some given subset of a domain and low energy on another. We show that such potentials exist for general L-infinity-conductivities (with positive infima) in almost arbitrarily shaped subregions of a domain, as long as these regions are connected to the boundary and a unique continuation principle is satisfied. From this we deduce a simple, but new, theoretical identifiability result for the famous Calderon problem with partial data. We also show how to construct such potentials numerically and use a connection with the factorization method to derive a new non-iterative algorithm for the detection of inclusions in electrical impedance tomography.