Amorphous silicon display backplanes on plastic substrates

Amorphous silicon thin-film transistors and pixel driver circuits for organic light-emitting diode displays have been fabricated on plastic substrates. Pixel circuits demonstrate sufficient current delivery and long-term stable operation. © 2005 IEEE.

High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

On the little known species of threadfin breams Nemipterus mesoprion (Bleeker) and Nemipterus delagoae (Smith)

Among the fish species of the family Nemipteridae, the two little known species, namely, Nemipterus mesoprion (Bleeker) and Nemipterus delagoae (Smith) are recorded from the Cochin waters. Nemipterus mesoprion is a new distributional record from the west coast of India. N. delagoae is described with adequate numbers of specimen for the first time from Indian waters. Moreover, the results of the present study show that the colour of the viscera, the number of pyloric caeca and the gill rakers can also be used for the diagnosis of the species of the genus Nemipterus. The affinity of the above species with other related species of the genus Nemipterus and their geographical distribution are presented.

Scoping study on migrant fishers and transboundary fishing in the Bay of Bengal

This study assesses the issue of migratory and transboundary fishing. It explores working conditions on fishing vessels operating outside national waters together with issues pertaining to rights and extent of use of legal and illegal foreign labour. The report also provides recommendations for action and further research.

Two new species of the sisorid genus Oreoglanis Smith from Yunnan, China (Teleostei : Sisoridae)

Two new species of the genus Oreoglanis, O. jingdongensis and O. immaculatus are described from the Mekong and Salween River basins, respectively, of Yunnan Province, China. Oreoglanis jingdongensis can be distinguished from other Oreoglanis species by th

Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.