956 resultados para Aperture height index


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We study two-dimensional Banach spaces with polynomial numerical indices equal to zero.

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The development of a reflective, gold-coated long-period grating-based sensor for the measurement of chloride ions in solution is discussed. The sensor scheme is based around a long-period fiber grating (LPG)-based Michelson interferometer where the sensor was calibrated and evaluated in the laboratory using sodium chloride solutions, over a wide range of concentrations, from 0.01 to 4.00 M. The grating response creates shifts in the spectral characteristic of the interferometer, formed using the LPG and a reflective surface on the distal end of the fiber, due to the change of refracting index of the solution surrounding it. It was found that the sensitivity of the device could be enhanced over that obtained from a bare fiber by coating the LPG-based interferometer with gold nanoparticles and the results of a cross-comparison of performance were obtained and details discussed. The approach will be explored as a basis to create a portable, low-power device, developed with the potential for installation in concrete structures to determine the ingress of chloride ions, operating through monitoring the refractive index change.

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A time-domain formulation of a lumped model ap-
proximation of a clarinet reed excitation mechanism is presented.
The lumped model is based on an analytical representation of
the ow within the reed channel, incorporating a contraction
coefcient (vena contracta factor) that is dened as the ratio of
the effective ow over the Bernoulli ow. This coefcient has
been considered to be constant in previous studies focusing on
sound synthesis. In this paper it will be treated as a function
of the reed opening, varying between 0 and 1 as predicted by
boundary layer ow theory. Focussing on a specic mouthpiece
geometry, the effect of modelling a variable air jet height on the
synthesised sound is analysed.

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To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400 degrees C to 700 degrees C) to form PtSi. The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20-290 K) over which the I-V characteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance-voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide-silicon interface. The forward C-V characteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.