GdFeCo／TbFeCo磁超分辨磁光记录薄膜研究

用磁控溅射法制备了GdFeCo／TbFeCo交换耦合两层薄膜，利用不同温度的克尔磁滞回线和VSM磁滞回线研究了读出层（GdFeCo）变温磁化方向变化过程．结果表明，随温度升高读出层从平面磁化转变为垂直磁化，交换耦合两层薄膜具有中心孔探测磁超分辨的基本性能．转变过程主要受饱和磁化强度（Ms）的影响，在GdFeCo的补偿温度附近，读出层的磁化强度较小，退磁场能也较小，在交换耦合的作用下，使读出层（GdFeCo）的磁化方向发生转变．磁化方向的转变在75℃～125℃的温度范围内变化较快．

Determination and analysis of the optical constants of thin films of nickel(II) and copper(II) hydrazone complexes by spectroscopic ellipsometry

Thin films of four nickel(II) and copper(II) hydrazone complexes, which will hopefully be used as recording layers for the next-generation of high-density recordable disks, were prepared by using the spin-coating method. Absorption spectra of the thin films on K9 optical glass substrates in the 300-700 nm wavelength region were measured. Optical constants (complex refractive indices N) and thickness d of the thin films prepared on single-crystal silicon substrates in the 275-675 nm wavelength region were investigated on a rotating analyzer-polarizer scanning ellipsometer by fitting the measured ellipsometric angles (Psi(lambda) and Delta(lambda)) with a 3-layer model (Si/dye film/air). The dielectric functions epsilon and absorption coefficients alpha as a function of the wavelength were then calculated. Additionally, a design to achieve high reflectivity and optimum dye film thickness with an appropriate reflective layer was performed with the Film Wizard software using a multilayered model (PC substrate/reflective layer/dye film/air) at 405 nm wavelength.

Yb:YAG/YAG复合陶瓷薄片连续和调Q输出特性

采用面泵浦的CAMIL结构，我们研究了970 nm泵浦的Yb:YAG/YAG复合陶瓷薄片激光器，获得了连续和调Q的激光输出。在连续运转情况下，获得了最高1.05 W的激光输出，中心波长为1031 nm，后腔输出镜透射率为2％。我们同时获得了声光调Q的脉冲输出，重复频率从1 kHz到30 kHz，脉宽分别从166 ns到700 ns。

Papel dos receptores β-adrenérgicos no reparo cutâneo de lesões crônicas em camundongos: modelo não invasivo de lesão por isquemia e reperfusão

Os receptores β1- e β2-adrenérgicos estão presentes em inúmeras células que participam do processo de reparo como fibroblastos, queratinócitos, células inflamatórias e células endoteliais. Diversos trabalhos demonstram que estes receptores modulam o processo de reparo tecidual. Entretanto, nenhum trabalho demonstrou se o bloqueio destes receptores compromete o reparo de úlceras de pressão. O objetivo deste estudo foi avaliar o efeito do bloqueio dos receptores β1- e β2-adrenérgicos no reparo de úlceras de pressão em camundongos, para isto utilizamos um modelo não invasivo de lesão por isquemia e reperfusão. No presente estudo, utilizamos animais que foram tratados por gavagem com propranolol (um antagonista não seletivo dos receptores β1- e β2-adrenérgicos). A administração do antagonista teve início um dia antes do início dos ciclos de isquemia e reperfusão e se manteve diariamente até a eutanásia. Para desenvolver a úlcera de pressão, um par de magnetos foi aplicado no dorso dos animais previamente depilado. O período de permanência do magneto é caracterizado como período de isquemia, enquanto sua retirada é caracterizada como período de reperfusão. Os ciclos de isquemia e reperfusão foram repetidos duas vezes, e ao final do último ciclo, duas úlceras circulares foram criadas no dorso dos animais. Os animais foram mortos 3, 7, 14 e 21 dias após a lesão. Após o último ciclo de isquemia, o fluxo sanguíneo da área comprimida foi nulo, 7 horas após a compressão o fluxo sanguíneo estava elevado, com níveis superiores ao da pele normal. Após 24 e 48 horas, o fluxo sanguíneo estava reduzido e abaixo dos níveis da pele normal. O bloqueio dos receptores β1- e β2-adrenérgicos aumentou os níveis de peróxidos lipídicos 3 dias após a lesão, comprometeu a migração dos queratinócitos, levando a um aumento da proliferação epitelial, resultando em uma re-epitelização atrasada. O retardo na formação da neo-epiderme induzido pelo bloqueio destes receptores prejudicou a remoção do tecido necrótico. O bloqueio dos receptores β1- e β2-adrenérgicos aumentou o número de células inflamatórias (neutrófilos e macrófagos), os níveis proteicos de elastase neutrofílica 3 dias após a lesão e reduziu os níveis proteicos de MCP-1 3 dias após a lesão e os níveis proteicos de MMP-12 7 dias após a lesão. O bloqueio dos receptores β1- e β2-adrenérgicos aumentou a proliferação celular e apoptose no tecido conjuntivo 7 dias após a lesão e aumentou a densidade de vasos sanguíneos 14 e 21 dias após a lesão. O bloqueio dos receptores β1- e β2-adrenérgicos retardou a diferenciação miofibroblástica e reduziu os níveis proteicos de TGF-β 1/2/3 3 dias após a lesão e a contração da lesão. Vinte e um dias após a lesão, o bloqueio dos receptores β1- e β2-adrenérgicos aumentou a espessura da neo-epiderme e a expressão de tenascina-C em fibroblastos e reduziu a deposição de colágeno. Em conclusão, o bloqueio dos receptores β1- e β2-adrenérgicos atrasa o reparo tecidual em úlceras de pressão.

Estudo da resistência aos antimicrobianos em enterobactérias isoladas de mãos de manipuladores de alimentos em cantinas permissionárias de uma universidade no Município do Rio de Janeiro

A contaminação dos alimentos e transmissão de patógenos via manipuladores pode ocorrer se as condições de higiene, armazenamento e preparo não estiverem satisfatórios. Procedimentos inadequados de manipulação oferecem um perigo potencial à saúde pública devido ao alto risco de ocorrência de doenças de origem alimentar por microrganismos resistentes aos antimicrobianos. Neste estudo foram coletados swabs das mãos de 49 manipuladores de alimentos, isoladas e identificadas por metodologia convencional 244 enterobactérias de 7 cantinas permissionárias em uma Universidade do Município do Rio de Janeiro. Foram utilizados discos contendo os seguintes antimicrobianos: aztreonam, tobramicina, ceftazidima, cloranfenicol, tetraciclina, sulfa, amicacina, ampicilina e sulbactam, ciprofloxacina, gentamicina, cefalotina, cefepime, cefoxitina, imipenem, ampicilina, cefotaxima. A pesquisa de genes que codificam β-lactamases foi realizada pela Reação em Cadeia da Polimerase para os genes blaTEM, blaSHV, blaCTX, blaOXA-1 e blaCMY-2. As espécies mais prevalentes identificadas foram: Enterobacter cloacae (21,3%), Citrobacter braakii (15,2%), Escherichia coli (12,7%), Klebsiella pneumoniae subesp. Pneumoniae (12,2%). O perfil de resistência aos antimicrobianos revelou que 94 (38,5%) cepas identificadas apresentaram resistência a pelo menos dois antibióticos, 55 cepas (22,5%) a pelo menos um antibiótico, 34 cepas (13,9%) a três antibióticos, 14 cepas (5,7%) mostraram-se resistentes a quatro antibióticos. Uma cepa de E. cloacae mostrou resistência múltipla a dez antibióticos e 140 cepas (57,3%) foram resistentes simultaneamente a cefalotina e cefoxitina. Nenhuma cepa foi resistente ao aztreonam e a sulfa e apenas 01 foi resistente ao ciprofloxacina, 01 ao imipenem e 02 a cefotaxima. Foi identificado a presença do gene blaSHV em uma cepa de K. pneumoniae subsp. pneumoniae. Este dado aponta para uma mudança no perfil dessas bactérias isoladas da comunidade que passam a ter características semelhantes com as de origem hospitalar. Os resultados alertam para um perigo à saúde dos consumidores e conseqüentemente à saúde pública, devido a presença de enterobactérias resistentes aos antimicrobianos nas mãos de manipuladores de alimentos.

Measurement of the elastic constants of nanometric films

Carbon coatings of thickness down to 2 nanometers are needed to increase the storage density in magnetic hard disks and reach the 100 Gbit/in2 target. Methods to measure the properties of these ultrathin hard films still have to be developed. We show that combining Surface Brillouin Scattering (SBS) andX-ray reflectivity measurements the elastic constants of such films are accessible. Tetrahedral amorphous carbofilms of thickness down to about 2 nm were deposited on Si by an S bend filtered cathodic vacuum arc, achieving a continuous coverage on large areas free of macroparticles. Film thickness and mass density are measured by X-ray reflectivity: densities above 3 g/cm3 are found, indicating a significant sp3 content. The dispersion relations of surface acoustic waves are measured by SBS. We show that for thicknesses above ∼4 nm these waves can be described by a continuum elastic model based on a single homogeneous equivalent film. The elastic constants can then be obtained by fitting the dispersion relations, computed for given film properties, to the measured dispersion relations. For thicknesses of 3 nm or less qualitative differences among films are well measurable, but quantitative results are less reliable. We have thus shown that we can grow and characterise nanometer size tetrahedral amorphous carbon film, which maintain their high density and peculiar mechanical properties down to around 4 nm thickness, satisfying the requirements set for the hard disk coating material.

Shroud heat transfer measurements from a rotating cavity with an axial throughflow of air

The paper discusses measurements of heat transfer obtained from the inside surface of the peripheral shroud. The experiments were carried out on a rotating cavity, comprising two 0.985-m-dia disks, separated by an axial gap of 0.065 m and bounded at the circumference by a carbon fiber shroud. Tests were conducted with a heated shroud and either unheated or heated disks. When heated, the disks had the same temperature level and surface temperature distribution. Two different temperature distributions were tested; the surface temperature either increased, or decreased with radius. The effects of disk, shroud, and air temperature levels were also studied. Tests were carried out for the range of axial throughflow rates and speeds: 0.0025 ≤ m ≤ 0.2 kg/s and 12.5 ≤ Ω ≤ 125 rad/s, respectively. Measurements were also made of the temperature of the air inside the cavity. The shroud Nusselt numbers are found to depend on a Grashof number, which is defined using the centripetal acceleration. Providing the correct reference temperature is used, the measured Nusselt numbers also show similarity to those predicted by an established correlation for a horizontal plate in air. The heat transfer from the shroud is only weakly affected by the disk surface temperature distribution and temperature level. The heat transfer from the shroud appears to be affected by the Rossby number. A significant enhancement to the rotationally induced free convection occurs in the regions 2 ≤ Ro ≤ 4 and Ro ≥ 20. The first of these corresponds to a region where vortex breakdown has been observed. In the second region, the Rossby number may be sufficiently large for the central throughflow to affect the shroud heat transfer directly. Heating the shroud does not appear to affect the heat transfer from the disks significantly.

Excitonic energy of vertically stacked self-assmbled InAs quantum dots

We have studied the exciton states in vertically stacked self-assembled quantum disks within the effective mass approximation. The energy spectrum of the electron and hole is calculated using the transfer matrix formalism in the adiabatic approximation. The Coulomb interaction between the electron and the hole is treated accurately by the direct diagonalization of the Hamiltonian matrix. The effect of the vertical alignment of the disks on the ground energy of heavy- and light-hole exciton is presented and discussed. The binding energy is discussed in terms of the probability of the ground wave function. The ground energy of heavy- and light-hole excitons as a function of the magnetic field is presented and the effect of the disk size (the radius of disks) on the exciton energy is discussed.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Effects of multistage coupling and disk flexibility on mistuned bladed disk dynamics

The effects ofdisk flexibility and multistage coupling on the dynamics of bladed disks with and without blade mistuning are investigated. Both free and forced responses are examined using finite element representations of example single and two-stage rotor models. The reported work demonstrates the importance of proper treatment of interstage (stage-to-stage) boundaries in order to yield adequate capture of disk-blade modal interaction in eigenfrequency veering regions. The modified disk-blade modal interactions resulting from interstage-coupling-induced changes in disk flexibility are found to have a significant impact on (a) tuned responses due to excitations passing through eigenfrequency veering regions, and (b) a design's sensitivity to blade mistuning. Hence, the findings in this paper suggest that multistage analyses may be required when excitations are expected to fall in or near eigenfrequency veering regions or when the sensitivity to blade mistuning is to be accounted for Conversely, the observed sensitivity to disk flexibility also indicates that the severity of unfavorable structural interblade coupling may be reduced significantly by redesigning the disk(s) and stage-to-stage connectivity. The relatively drastic effects of such modifications illustrated in this work indicate that the design modifications required to alleviate veering-related response problems may be less comprehensive than what might have been expected.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.