利用超分次技术进行肿瘤治疗的探讨

以人类肝癌细胞SMMC-7721和正常肝细胞L02为研究对象,以这两种细胞0.3 Gy时超敏感性的存活数据为基础,从理论上探讨了γ射线照射时,用超分次技术治疗肝癌的可能性。经过计算发现:如果目标肿瘤和周围的正常组织超敏感性的存活差异提高到3%,即可利用超分次技术对肿瘤进行治疗。应用超分次进行分次照射时,照射的结果与分次的间隔时间有关。对这一现象的机理进行了一定的探讨,发现时间间隔与细胞G2期的长短可能存在一定的相关性。

What triggers the transition of palaeoenvironmental patterns in China；the Tibetan Plateau uplift or the Paratethys Sea retreat?

IEECAS SKLLQG

贺兰山油松生长的气候响应机制初步探讨

IEECAS SKLLQG

一种高性能双维位置灵敏平行板雪崩探测器

本文描述了为兰州放射性离子束流线(RIBLL)研制的一种高性能平行板雪崩计数器(PPAC)。它由中心阳极和X、Y位置阴极构成,阳极—阴极间距3mm。阳极为1.5 mm 厚Mylar膜,双面镀金。阴极为f25mm 镀金钨丝,丝距1mm,位置读出采用电荷分除法。工作气体异丁烷。当工作气压为700 Pa,阳极电压为500 V时,对3组分a粒子位置分辨 0.76 mm(FWHM),探测效率约99.1%。

电子束的收集

为提高电子冷却装置中收集器的效率 ,研究了收集效率与几何参数和电、磁参数的关系 ,考虑了初级及反射电子的空间电荷作用 ,模拟计算了初级电子、反射电子在收集器区域的轨迹 ,由此得到了收集效率随电、磁参数的变化规律。结果表明 ,在合适的参数设置下 ,相对电流损失小于 1× 1 0 -4 ,收集效率达到 99.99%。

Kinetic modeling of growth and biodegradation of phenol and m-cresol using Alcaligenes faecalis

A phenol-degrading. microorganism, Alcaligenes faecalis, was used to study the substrate interactions during cell growth on phenol and m-cresol dual substrates. Both phenol and m-cresol could be utilized by the bacteria as,the sole carbon and energy sources. When cells grew on the mixture of phenol and m-cresol, strong substrate interactions were observed. m-Cresol inhibited the degradation of phenol, on the other hand, phenol also inhibited the utilization of m-cresol, the overall cell growth rate was the co-action of phenol and m-cresol. In addition, the cell growth and substrate degradation kinetics of phenol, m-cresol as single and mixed substrates for A. faecalis in batch cultures were also investigated over a wide range of initial phenol concentrations (10-1400 mg L-1) and initial m-cresol concentrations (5-200 mg L-1). The single-substrate kinetics was described well using the Haldane-type kinetic models, with model constants of it mu(m1) = 0.15 h(-1), K-S1 = 2.22 mg L-1 and K-i1 = 245.37 mg L-1 for cell growth on phenol and mu(m2) = 0.0782 h(-1), K-S2 = 1.30 mg L-1 and K-i2 = 71.77 mgL(-1), K-i2' = 5480 (mg L-1)(2) for cell growth on m-cresol. Proposed cell growth kinetic model was used to characterize the substrates interactions in the dual substrates system, the obtained parameters representing interactions between phenol and m-cresol were, K = 1.8 x 10(-6), M = 5.5 x 10(-5), Q = 6.7 x 10(-4). The results received in the experiments demonstrated that these models adequately described the dynamic behaviors of phenol and m-cresol as single and mixed substrates by the strain of A. faecalis.

Knotlike chi disclinations in the cholesteric liquid crystals

We investigate the topological properties of N(N >= 1) disclination lines in cholesteric liquid crystals. The topological structure of N disclination lines is obtained with the Hopf index and Brouwer degree. Furthermore, the knotted x disclination loops is proposed with the Hopf invariant. And we consider the stability of such configuration based on the higher order interaction. At last, the evolution of the disclinations is discussed.

X-ray spectroscopy of hollow argon atoms formed on a beryllium surface

The X-rays induced during interaction of highly charged argon ions with a beryllium surface are reported. It is found that the K shell X-ray yield of single particle during interaction of hydrogen-like argon ions was 3.6 x 10(-3), which is five orders more than that of heliumlike argon ions. Moreover, due to the screening the 2s electron, no K X-ray was emitted during interaction of lithium-like argon ions with the beryllium surface. It is also found that the X-ray spectrum induced by Ar17+ interacting with residual gases is very different from that induced by Ar17+ interacting with the surfaces, that provided an experimental evidence for the existence of the hollow atoms below the surface.

Temperature annealing of tracks induced by ion irradiation of graphite

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing.

Melting of Au and Al in nanometer Fe/Au and Fe/Al multilayers under swift heavy ions: A thermal spike study

Knowing that Fe is sensitive to swift heavy ion irradiations whereas Au and Al are not, the behavior of nanometric metallic multilayer systems, like [Fe(3 nm)/Au(x)](y) and [Fe(3 nm)/Al(x)](y) with x ranging between 1 and 10 mn, were studied within the inelastic thermal spike model. In addition to the usual cylindrical geometry of energy dissipation perpendicular to the ion projectile direction, the heat transport along the ion path was implemented in the electronic and atomic sub-systems. The simulations were performed using three different values of linear energy transfer corresponding to 3 MeV/u of Pb-208, Xe-132 and Kr-84 ions. For the Fe/Au system, evidence of appearance of a molten phase was found in the entire Au layer, provided the Au thickness is less than 7 nm and 3 nm for Pb and Xe ions, respectively. For the Fe/Al(x) system irradiated with Pb ions, the Al layers with a thickness less than 4 nm melt along the entire ion track. Surprisingly, the Fe layer does not melt if the Al thickness is larger than 2 nm, although the deposited energy surpasses the electronic stopping power threshold of track formation in Fe. For Kr ions melting does not occur in any of the multilayer systems.

Materials research with swift heavy ions at the IMP accelerators

The main ion beams acceleration facilities and research fields of the Institute of Modern Physics (IMP) are briefly introduced. Some of the experimental instruments, typical works and the obtained results on the materials research with swift heavy ions at the IMP-accelerators are presented.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.