Dislocations emission and crack extension at the atomistic crack tip in body-centered-cubic metal Mo

The behaviors of a crack in body-centered-cubic metal Mo under different loading modes were studied using the molecular dynamics method. Dislocation emission was observed near the crack tip in response to mode II loading with theta = 0 degrees in which theta is the inclination angle of the slip plane with respect to the crack plane, and two full dislocations were observed at the stress level of K-II = 1.17 MPa m(1/2) without any evidence of crack extension. Within the range of 0 degrees less than or equal to theta less than or equal to 45 degrees, crack extension was observed in response to mode I loading, and the effect of crystal orientation on the crack propagation was studied, The crack propagated along the [111] slip direction without any evidence of dislocations emission.

Analysis of Dislocation-Induced Strain Field in an Idealized Wafer-Bonded Microstructure

The localized dislocation at the interface induces uneven strain distribution in two wafer-bonded layers. Because of the different elastic properties of two bonding layers and this uneven strain distribution, the bilayered microstructure deflects and deflection relaxes the strains. Depending on the microstructure dimensions, elastic properties and lattice parameters, the contribution of deflection to strain field can be very significant. The interface condition also plays an important role in relaxing strain. Two models capable of describing different interface conditions are used for the analysis and offer a more comprehensive study on the dislocation-induced strain field in a wafer-bonded bilayered microstructure. The combined effect of microstructure dimensions and interface condition on the strain is presented and compared.

Gain saturation in 60-fs mode-locked semiconductor laser

A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation. © 2010 Optical Society of America.

Comportamiento agro-industrial de catorce variedades de caña de azúcar (Saccharum sp hibrido L.) en comparación con las variedades Ja 60-5 y C 87-51

El presente trabajo se llevó a cabo en el ciclo 92-93 en el Ingenio Victoria de Julio, donde se evaluaron 14 variedades de caña de azúcar en comparación con las variedades Ja 60 - 5 y C 87 - 51 para determinar el comportamiento agro-industrial de estos cultivares y seleccionar los genotipos más sobresalientes. El experimento fue establecido el 25 de enero de 1992, en un suelo arcilloso de la serie Chilamatillo, la cosecha se realizó a los 11 meses de edad del cultivo, el 16 de Dic 1992. El diseño utilizado fue de bloques completos al azar con 5 repeticiones, las variables estudiadas fueron: Germinación, población, altura de tallos, floración, diámetro de tallos, peso promedio de los tallos, rendimiento agrícola, rendimiento industrial y rendimiento agro-industrial. Los datos fueron sometidos a un análisis de varianza y prueba de tukey al 5% de margen de error. Los resultados obtenidos fueron los siguientes: Germinación; siendo las mejores RB 73-1012, CP 70-321 y Q 96. Población;las mejores numéricamente resultaron Méx 68-P 23,SP 70-1284 y SP 72-4790. Longitud de tallo; las mejores variedades fueron la SP 72-4790, Q 96, RB 73-1012 y RB 73-5220. Diámetro de los tallos; obtuvo el mejor resultado la variedad Méx 69-420 y en segundo lugar la Ja 60-5. Peso promedio de 100 tallos. ; presentando el mejor resultado el cultivar Méx 69-420 seguido de la RB 73-5220. Floración; todas las variedades florecieron a excepción del testigo C 87-51. Rendimiento agrícola; obtuvo el mejor resultado la variedad Méx 68-P 23 ocupando el segundo lugar SP 72-4790; Rendimiento industrial; entre las variedades sobresalieron numéricamente la Q 96 seguido de la C 87-51 y la CP 72-1210. Rendimiento Agro-Industrial; de acuerdo a los resultados de rangos múltiples la variedad Q 96 presenta un rendimiento estadísticamente superior a la variedad testigo Ja 60-5, superando numéricamente al resto de variedades. Las variedades que presentaron afectaciones por enfermedades fueron : RB 76-5288, SP 70-1284, SP 72-4790, CP 72-1210, SP 71-61801 CP 72-2086, Méx 69-420, Méx 68-P23, Ja 60-5 y e 87-51.

Molecular dynamics simulation on dislocation emission process

A correlative reference model for a computer simulation of molecular dynamics is proposed in this paper. Based on this model, a flexible displacement boundary scheme is naturally introduced and the dislocations emitted from a crack tip are presumed to continuously pass through the border of an inner discrete atomic region to pile up at an outer continuum region. The simulations for a Mo crystal show that the interaction between a crack and emitted dislocations results in the decrease in local stress intensity factor gradually.

Mechanics of a grip system of three-key-board hydraulic tongs developed for offshore oil pipe lines

This paper carries out the analysis of mechanics of a grip system of three-key-board hydraulic tongs developed for offshore oil pipe lines which has been successfully used in oil fields in China. The main improvement of this system is that a lever frame structure is used in the structural design, which reduces greatly the stresses of the major components of the oil pipe tongs. Theoretical analysis and numerical calculation based on thirteen basic equations developed Show that the teeth board of the tongs is not easy to slip as frequently happens to other systems and is of higher reliability.

A New Deformation Theory with Strain Gradient Effects

A new phenomenological deformation theory with strain gradient effects is proposed. This theory, which belongs to nonlinear elasticity, fits within the framework of general couple stress theory and involves a single material length scale l. In the present theory three rotational degrees of freedom omega(i) are introduced in addition to the conventional three translational degrees of freedom u(i). omega(i) has no direct dependence upon ui and is called the micro-rotation, i.e. the material rotation theta(i) plus the particle relative rotation. The strain energy density is assumed to only be a function of the strain tensor and the overall curvature tensor, which results in symmetric Cauchy stresses. Minimum potential principle is developed for the strain gradient deformation theory version. In the limit of vanishing 1, it reduces to the conventional counterparts: J(2) deformation theory. Equilibrium equations, constitutive relations and boundary conditions are given in details. Comparisons between the present theory and the theory proposed by Shizawa and Zbib (Shizawa, K., Zbib, H.M., 1999. A thermodynamical theory gradient elastoplasticity with dislocation density Censor: fundamentals. Int. J. Plast. 15, 899) are given. With the same hardening law as Fleck et al. (Fleck, N.A., Muller, G.H., Ashby, M.F., Hutchinson, JW., 1994 Strain gradient plasticity: theory and experiment. Acta Metall. Mater 42, 475), the new strain gradient deformation theory is used to investigate two typical examples, i.e. thin metallic wire torsion and ultra-thin metallic beam bend. The results are compared with those given by Fleck et al, 1994 and Stolken and Evans (Stolken, J.S., Evans, A.G., 1998. A microbend test method for measuring the plasticity length scale. Acta Mater. 46, 5109). In addition, it is explained for a unit cell that the overall curvature tensor produced by the overall rotation vector is the work conjugate of the overall couple stress tensor. (C) 2002 Elsevier Science Ltd. All rights reserved.

InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength

We demonstrate the growth of crack-free blue and greenemitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5×1 09 cm-2 to 2×109 cm-2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Literatura hispanorromance primigenia : la glosa conoajutorio del Codex Aemilianensis 60

Resumen: Puesto que Dámaso Alonso calificó la Glosa 89 (conoajutorio...), folio 72r del Códice Emilianense 60, como “vagido” de una lengua española, reconoció su naturaleza de plegaria, y afirmó que se trataba de un texto que “casi tiene ya estructura literaria”, el propósito de esta ponencia es demostrar que, considerados los aspectos filológico, lingüístico, retórico, literario y doctrinal, este texto no solo excede el carácter de glosa y de expresión formular, sino que es una obra literaria perfecta en forma y en sentido.

Size Effects in Micro-bending Deformation of MEMS Devices Based on the Discrete Dislocation Theory

In the present research, the discrete dislocation theory is used to analyze the size effect phenomena for the MEMS devices undergoing micro-bending load. A consistent result with the experimental one in literature is obtained. In order to check the effectiveness to use the discrete dislocation theory in predicting the size effect, both the basic version theory and the updated one are adopted simultaneously. The normalized stress-strain relations of the material are obtained for different plate thickness or for different obstacle density. The prediction results are compared with experimental results.

Fabrication of 25nm wide gold lines using nanometer scale lithography and ionized cluster beam deposition

It becomes increasingly difficult to make continuous metal lines with well defined thickness and edges by the lift-off technique as the line width is decreased. We describe in this paper a technique in which the combination of high resolution electron beam lithography and ionized cluster beam (ICB) deposition has enabled very high quality gold lines ({all equal to}25nm wide) to be obtained on thick single crystal silicon substrates. © 1990.

Measurement of Microscopic Deformation in a Cualni Single Crystal Alloy by Nanoindentation with a Heating Stage

Thermally induced recovery of nanoindents in a CUAINi single crystal shape memory alloy was studied by nanoindentation in conjunction with a heating stage. Nanoindents formed by a Berkovich indenter at room temperature were heated to 40, 70 and 100 degrees C. Partial recovery was observed for the nanoindents. The recovery ratio depended on the heating temperature. Indentation of CuAlNi can induce inelastic deformation via dislocation motion and a stress-induced matensitic transformation. The percentages of dislocation-induced plastic strain would affect the thermal deformation of CuAlNi, because the induced dislocations could stabilize stress-induced martensite plates even when the temperature above austenite finish temperature, A(f). When the applied indentation load is low (less than 10,000 mu N), the shape recovery strain is predominant, compared with the dislocation-induced plastic strain. Therefore, the degree of indent recovery in the depth direction, delta(D), is high (about 0.7-0.8 at 100 degrees C).

Dislocation evolution in epitaxial multilayers and graded composition buffers

This paper presents models to describe the dislocation dynamics of strain relaxation in an epitaxial uniform layer, epitaxial multilayers and graded composition buffers. A set of new evolution equations for nucleation rate and annihilation rate of threading dislocations is developed. The dislocation interactions are incorporated into the kinetics process by introducing a resistance term, which depends only on plastic strain. Both threading dislocation nucleation and threading dislocation annihilation are characterized. The new evolution equations combined with other evolution equations for the plastic strain rate, the mean velocity and the dislocation density rate of the threading dislocations are tested on GexSi1-x/Si(100) heterostructures, including epitaxial multilayers and graded composition buffers. It is shown that the evolution equations successfully predict a wide range of experimental results of strain relaxation and threading dislocation evolution in the materials system. Meanwhile, the simulation results clearly signify that the threading dislocation annihilation plays a vital role in the reduction of threading dislocation density.