990 resultados para 3C-SiC
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There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene–semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I–V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I–V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC.
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Sign.: [calderón]1, A-Z4, 2A-2Z4, 3A-3K4, 3L
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Vertical diodes of epitaxial graphene on n 4H-SiC were investigated. The graphene Raman spectraexhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film.Rectifying properties improved at low temperatures as the reverse leakage decreased over six ordersof magnitude without freeze-out in either material. Carrier concentration of 10 16 cm 3in the SiCremained stable down to 15 K, while accumulation charge decreased and depletion width increasedin forward bias. The low barrier height of 0.08 eV and absence of recombination-induced emissionindicated majority carrier field emission as the dominant conduction mechanism.
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Sign.: []2, A-R2
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Nouiter impressi ac alme correcti, cum reportorio
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Tít. tomado del colofón en 2q7v
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Nanoscale Al/SiC composite laminates have unique properties, such as high strength, high toughness, and damage tolerance. In this article, the high-temperature nanoindentation response of Al/SiC nanolaminates is explored from room temperature up to 300_C. Selected nanoindentations were analyzed postmortem using focused ion beam and transmission electron microscopy to ascertain the microstructural changes and the deformation mechanisms operating at high temperature.
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Sign.: [calderón]6, a-z8, [et]8, [cum]8, [rum]8, 2a8
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Apéndice documental
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El editor es Pedro Juan Mallén, segun consta en los preliminares
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Apéndice de documentos, la mayoría en latín, al final de cada tomo
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Autor tomado de final de texto
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Hay un ejemplar encuadernado con: Informe legal y politico a la S.C.R.M. del Rey... por los Iurados de la... ciudad de Valencia, y por los insaculados para los oficios mayores... (XVII/33).
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