Impacts of the Wenchuan Earthquake on the Giant Panda Nature Reserves in China

Ministry of Science and Technology of China [2008BAK47B02, 2008BAC44B04, 2008BAK50B06, 2008BAC43B01, 2006BAC08B06]

Structure and mechanical properties of extruded Mg-Gd based alloy sheet

The Mg-8Gd-2Y-1Nd-0.3Zn-0.6Zr (wt.%) alloy sheet was prepared by hot extrusion technique, and the structure and mechanical properties of the extruded alloy were investigated. The results show that the alloy in different states is mainly composed of alpha-Mg solid solution and secondary phases of Mg5RE and Mg24RE5 (RE = Gd, Y and Nd). At aging temperatures from 200 degrees C to 300 degrees C the alloy exhibits obvious age-hardening response. Great improvement of mechanical properties is observed in the peak-aged state alloy (aged at 200 degrees C for 60 h), the ultimate tensile strength (sigma(b)), tensile yield strength (sigma(0.2)) and elongation (epsilon) are 376 MPa, 270 MPa and 14.2% at room temperature (RT), and 206 MPa. 153 MPa and 25.4% at 300 degrees C, respectively, the alloy exhibits high thermal stability.

P(AM/AMPS/NVP)降失水剂合成与耐温性能研究

采用自由基水溶液聚合法成功制备了丙烯酰胺(AM)/2-甲基-2-丙烯酰胺基丙磺酸(AMPS)/N-乙烯基吡咯烷酮(NVP)三元共聚耐温型降滤失剂,通过红外(FTIR)光谱和核磁C谱表征了共聚物的结构,通过元素分析考察了共聚物组成。热失重(TGA)表明,P(AM/AMPS/NVP)耐温性优于P(AM/AMPS)和P(AM),通过对三元共聚物的抗高温性和降失水性的研究,表明P(AM/AMPS/NVP)具有良好的耐温降滤失性能。

Investigation on internal electric field distribution of organic light-emitting diodes (OLEDs) with Eu2O3 buffer layer

We have found that organic light-emitting diode (OLED) performance was highly improved by using europium oxide (Eu2O3) as a buffer layer on indium tin oxide (ITO) in OLEDs based on tris-(8-hydroxyquinoline) aluminium (Alq(3)), which showed low turn-on voltage, high luminance, and high electroluminescent (EL) efficiency. The thickness of Eu2O3 generally was 0.5-1.5 nm. We investigated the effects of Eu2O3 on internal electric field distributions in the device through the analysis of current-voltage characteristics, and found that the introduction of the buffer layer balanced the internal electric field distributions in hole transport layer (HTL) and electron transport layer (ETL), which should fully explain the role of the buffer layer in improving device performance. Our investigation demonstrates that the hole injection is Fowler-Nordheim (FN) tunnelling and the electron injection is Richardson-Schottky (RS) thermionic emission, which are very significant in understanding the operational mechanism and improving the performance, of OLEDs.

Synthesis and characterization of novel lanthanocene complexes with dichalcogenolate o-carboranyl ligands

Reactions of [ Cp(2)Ln(mu-Cl)](2) (Cp = eta(5)-C5H5, Ln = Nd, Yb, Dy, Gd, Er) with an equivalent of [ (THF)(3)LiE2C2B10H10Li. (TT-IF) (THF)](2) (E = S, Se) in THF afforded the dinuclear sandwich complexes of formula[Cp(2)LnE(2)C(2)B(10)H(10)](2)[Li(THF)(4)](2) [E = S, Ln = Nd (1a), Yb (2a), Dy (3a), Gd (4a), Er (5a); E = Se, Ln = Nd (1b), Yb (2b), Dy (3b), Gd (4b), Er (5b)]. The molecular structures of complexes la, 2a and 2b were determined by the single crystal X-ray structure analyses. Two lanthanide atoms are connected by a pair chalcogen (eta(1), eta(2)-E2C2B10H10) bridging ligands and the central Ln(2)E(2) four membered ring is not planar.

VUV-UV photoluminescence spectra of strontium orthophosphate doped with rare earth ions

The measurements of VUV-UV photoluminescence emission (PL) and photoluminescence excitation (PLE) spectra of rare earth ions activated strontium orthophosphate [Sr-3(PO4)(2):RE, RE = Ce, Sm, Eu, Tb] are performed. Whenever the samples are excited by VUV or UV light, the typical emission of Ce-3+,Ce- Sm3+, Eu3+, Eu2+ and Tb3+ ions can be observed in PL spectra, respectively. The charge transfer bands (CTBs) of Sm3+ and Eu3+ are found, respectively, peaking at 206 and 230nm. The absorption bands peaking in the region of 150-160 nm are assigned to the host lattice sensitization bands, i.e., the band-to-band transitions of PO43- grouping in Sr-3(PO4)(2). It is speculated that the first f-d transitions of Sm3+ (Eu3+), and the CTB of Tb3+ are, respectively, located around 165 (14 3) and 167 urn by means of VUV-UV PLE spectra and relational empirical formula, these f-d transitions or CT bands are included in the bands with the maxima at 150-160 nm, respectively. The valence change of europium from trivalent to divalent in strontium orthophosphate prepared in air is observe by VUV-UV PL and PLE spectra.

Scanning electrochemical microscopy study of electron transfer across the water/1,2-dichloroethane interface induced by common ions

In this work, we report the reverse electron transfer reaction between TCNQ in 1, 2-dichloroethane (DCE) and ferrocyanide in water. This process is a thermodynamic unfavorable reaction and the reverse electron transfer reaction can only be obtained by scanning electrochemical microscopy(SECM) in the presence of suitable potential-determining ions, which govern the interfacial potential difference. In our case, the potential determining ions are tetrabutylammonium ion(TBA(+)) and tetraphenylarsonium ion (TPAs+). The effects of the concentrations of TBA(+) and TPAs+ in two phases and other parameters have been studied in detail. The apparent heterogeneous rate constants(k(i)) were obtained under different values of K-p(K-p=c(i)(w)/c(i)(o)) for both cases by fitting the SECM approach curves with theoretical ones and the results showed that they were controlled by the interfacial potential differences. The relationship between apparent heterogeneous rate constants and the interfacial potential differences obeys Butler-Volmer theory.

应用扫描电化学显微镜研究水/1,2-二氯乙烷界面上离子诱导的电子转移反应

应用扫描电化学显微镜和微电极技术研究了水 / 1,2 二氯乙烷界面上的反向电子转移反应 .分别以K4 Fe(CN) 6和 7,7,8,8 四氰代二甲基苯醌 (TCNQ)作为水相和有机相的电活性物质 ,通过选择合理的共同离子 (TPAs+与TBA+)来控制界面电位差 ,实现了这一在热力学上通常不可能实现的反向电子转移反应 .利用扫描电化学显微镜给出的正负反馈信息 ,研究了界面电位差驱动的液 /液界面上的电子转移反应 ,并进一步得到了在不同的共同离子浓度比时 ,此异相界面反应速率常数kf 为 1 3× 10 -31 8× 10 -2 cm/s(共同离子为TBA+)和 2 5× 10 -32 8× 10 -2 cm/s(共同离子为TPAs+) .验证了此反应速率常数kf 是由界面电位差所决定的 .在此实验条件下 ,此反应速率常数kf 与界面电位差的关系遵守Butler Volmer公式 .

双包层传像光纤光子器件材料及工艺的研究

本文结合双包层传像光纤光子器件材料和工艺方面的研究,阐述了双包层传像光纤光子器件的工艺原理;从材料和工艺等方面分析了影响双包层传像光纤光子器件质量的一些因素;提出了必要的改进措施;并给出了双包层传像先纤光子器件有关性能的阶段性研究成果。

玻碳电极上六氰亚铁酸钯膜的现场FTIR光谱电化学研究

本文报道六氰亚铁酸钯膜修饰电极在HCL，KCL和NaCl溶液中的现场反射FTIR光谱电化学研究，结果表明该修饰膜具有内外两层结构，分别为Pd2Fe(CN)6和M2PdFe(CN)6，其中M为支持电解质一价阳离子．在1mol/L NaCl中，内层的氧化电位Em＝0.87V(vs．Ag/AgCl)，外层为0.77V．在1mol/L HCl或KCl中两层的氧化还原波重叠为一个大CV波峰而难以分辨，然而现场FTIR光谱电化学清晰地分辨出这两种结构在所有3种溶液中CN的不同振动频率，发现H+离子是最佳的支持电解质，能使这两种结构同时发生氧化反应