Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

Prediction of soil organic carbon partition coefficients by soil column liquid chromatography

To avoid the limitation of the widely used prediction methods of soil organic carbon partition coefficients (K-OC) from hydrophobic parameters, e.g., the n-octanol/water partition coefficients (K-OW) and the reversed phase high performance liquid chromatographic (RP-HPLC) retention factors, the soil column liquid chromatographic (SCLC) method was developed for K-OC prediction. The real soils were used as the packing materials of RP-HPLC columns, and the correlations between the retention factors of organic compounds on soil columns (k(soil)) and K-OC measured by batch equilibrium method were studied. Good correlations were achieved between k(soil) and K-OC for three types of soils with different properties. All the square of the correlation coefficients (R-2) of the linear regression between log k(soi) and log K-OC were higher than 0.89 with standard deviations of less than 0.21. In addition, the prediction of K-OC from K-OW and the RP-HPLC retention factors on cyanopropyl (CN) stationary phase (k(CN)) was comparatively evaluated for the three types of soils. The results show that the prediction of K-OC from k(CN) and K-OW is only applicable to some specific types of soils. The results obtained in the present study proved that the SCLC method is appropriate for the K-OC prediction for different types of soils, however the applicability of using hydrophobic parameters to predict K-OC largely depends on the properties of soil concerned. (C) 2004 Elsevier B.V. All rights reserved.

干湿变化与作物补偿效应规律研究

干湿变化是作物生产的水分环境,利用植物旱后复水所产生的补偿效应是农业抗旱节水的新途径。论述了农业干湿变化类型和补偿效应的内涵、干湿变化对作物生态补偿和生长发育阶段间补偿及生理代谢功能间补偿性。通过土壤大气湿度组合的玉米实验,研究了大气湿度提高补偿土壤干旱作物生长与水分利用效应的规律。

施加PAM的坡地降雨入渗过程及其模型研究

作为一种新型高效的土壤结构改良剂 PAM,在一定条件下能显著地提高土壤入渗能力 ,减小坡面径流。采用室内人工模拟降雨试验 ,研究了不同 PAM覆盖度下降雨产流随时间的动态变化及其与雨强、坡度的关系 ,以及入渗率随时间的变化规律 ,分析了 PAM、坡度、雨强对入渗率的影响。结果表明 ,地表施加 PAM后土壤的入渗率及稳定入渗率都比未施 PAM显著提高。通过对比施加 PAM后 Kostiakov入渗模型与 Horton入渗模型的显著性 ,表明 Horton入渗公式的适用性更好

高性能硅基锗光电探测器的研制

在信息产业、生物医学等科技领域越来越受关注的今天，新型光电子、光通信科技必将以更快的速度发展。Si基光电子集成采用成熟价廉的微电子加工工艺，将光学器件与多种功能的微电子电路集成，是实现光通信普及发展和光互连的有效途径。Si基光电探测器是Si基光通信系统的关键器件之一。随着近年来Si基Ge材料外延技术的突破性进展，Si基Ge光电探测器因为兼顾了Si基光电子集成和对光通讯波段(1.31和1.55μm)的高效探测，成为了当今研究的一大热点。
    半导体光电探测器的性能与其结构密切相关。PIN型光电探测器是最常见的探测器，可以普遍应用于光通讯光互连系统；雪崩光电二极管(APD)因为具有较高的响应度和内部增益，在实现单光子探测方面具备很大的优越性，适用于当今迅猛发展的生物光子学和量子信息学；共振腔增强型的光电探测器(RCE-PD)，集波长选择器、高速光信号接收器于一体，而且具备共振增强作用、高饱和功率输出等特点，是局域网、光纤入户和现代波分复用(Wavelength-Division Multiplexing,WDM)系统光通信网络的一种优选方案；波导结构探测器(Waveguide-PD)可以解除探测器的响应带宽和量子效率之间的矛盾，而且其结构特点更易于实现与调制器等光波导器件的集成，是片上光互连的首选探测器。
    本论文围绕高性能Si基Ge光电探测器这一研究目标，开展了多种结构的光电探测器的研制，包括PIN型PD的研制及其优化、吸收区与倍增区分离结构(SACM)的Ge-on-Si APD、RCE-PD和Waveguide-PD，主要研究结果如下：

1.                成功研制了PIN型Ge-on-Si光电探测器，器件在-1V外加偏压下暗电流密度为46.6mA/cm2，在1.31μm和1.55μm波长下器件的量子效率分别为40%和17%；然后改进了实验方法，在制作器件之前将Ge-on-Si材料在850℃条件下快速退火1分钟，从而改善材料质量，器件的暗电流密度降低至4mA/cm2，这是目前国际上报道的最好结果之一。

2.                研制出了PIN型Ge-on-SOI光电探测器，在1.31μm和1.55μm波长的量子效率分别为62%和25%。在-3V外加偏压下，器件的3dB带宽为12.6GHz。25μm直径器件，3dB带宽更是达到了13.4GHz。同时，制作了均匀性很好的1×4探测器阵列，单个器件的3dB带宽达13.3GHz。

3.                在国际上首次研究了硅基锗光电探测器的高饱和特性。在-1V和-2V外加偏压下，探测器的1-dB小信号压缩电流分别为22mA和40mA,相应的光功率分别为67.5mW和110.5mW。

4.                成功研制了吸收区和倍增区分离的Si基Ge雪崩光电二极管，器件的穿通电压Vpt约为29V，击穿电压Vbd(暗电流等于100μA时的电压)为39.5V。在击穿电压附近，如39V时，SACM-Ge-on-Si APD的增益为40。

5.                解决了背面ICP深刻蚀工艺难题，成功制备了中心波长在1.55μm，量子效应高达62%的共振腔增强型Si基Ge光电探测器。

东亚土地覆盖对ENSO事件的响应特征

对1982—1993年气候年际变化的强信号———ENSO进行了确认及再分类。以美国地质调查局EROS中心提供的AVHRR8kmNDVI为数据源,应用地理信息系统技术,计算了1982—1993年每年夏季(5—9月)NDVI平均影像。在此基础上用数据断面分析法对ENSO年东亚地区土地覆盖的空间分布进行了分析,再用主成分分析法对同一时间序列NDVI平均影像进行了运算,发现其第7主成分影像所反映的土地覆盖分布与数据断面分析法所反映的结果是一致的。对此,进一步分析了第7主成分的特征向量与代表ENSO变化特征的南方涛动指数(SOI)之间的关系,进而,对ENSO驱动下的东亚地区土地覆盖年际变化的空间分布特征进行了总结。

Stable isotopic compositions in Australian precipitation

Stable deuterium (delta D) and oxygen-18 (delta O-18) isotopes in 1962 to 2002 precipitation from the seven Australian stations of the Global Network of Isotopes in Precipitation (GNIP) were used to investigate isotope characteristics including temporal and spatial distributions across different regions of Australia. On the basis of 1534 samples, the local meteoric water line (LMWL) was established as delta D = 7.10 delta O-18 + 8.21. delta O-18 showed a depletion trend from north and south to central Australia (a continental effect) and from west to east. Precipitation amount effects were generally greater than temperature effects, with quadratic or logarithmic correlations describing delta/T and delta/P better than linear relationships. Nonlinear stepwise regression was used to determine the significant meteorological control factors for each station, explaining about 50% or more of the delta O-18 variations. Geographical control factors for delta O-18 were given by the relationship delta O-18 (parts per thousand) = -0.005 longitude (degrees) - 0.034 latitude (degrees)-0.003 altitude (m) - 4.753. Four different types of d-excess patterns demonstrated particular precipitation formation conditions for four major seasonal rainfall zones. Finally, wavelet coherence (WTC) between delta O-18 and SOI confirmed that the influence of ENSO decreased from east and north to west Australia.

中国海散射计风、浪算法研究及海面风场、有效波高的时空特征分析

海面风场系统对天气变化起着至关重要的作用。本文对ERS-2散射计风场数据进行了分析，并将其与NCEP再分析风场和浮标观测风场进行了比较。对连续13年中国海海区ERS-1/2和QuikSCAT散射计海面风场资料进行插值平均处理，得到一个中国海月平均海面风场资料集。首先对该资料集进行了逐月多年平均风场分析，进而对该资料集的距平风场进行矢量经验正交函数（Vector EOF）分解，分别探讨了中国海海面风场的年际和年代际变化特征。年际EOF分解得到的第一模态具有较好的年变化波动周期，与多年平均风场中的冬季风和夏季风（当时间系数为负值时）流型相近，表现为冬-夏振荡型，反映了影响整个中国海的东亚季风强盛时期的风场特征。第二模态与多年平均风场中的季节转换流型相近，表现为春－秋振荡型，反映了冬季风和夏季风之间的转换过渡时期的风场特征。年代际EOF分解得到的第一模态反映了中国海季风的年代际变化特征。第二模态时间系数分布与滞后4个月Nino3.4指数分布相似，反映了中国海海面风场对El Nino的响应。第三模态时间系数分布与南方涛动（SOI）指数分布相似，反映了ENSO现象对中国海海面风场异常的影响。 本文利用一种新的风浪成长关系计算了瞬时风场下的有效波高分布，并利用经验公式计算了风浪充分成长状态下的有效波高分布。分别以NCEP与QuikSCAT的混合风场和NCEP风场为输入，利用第三代海浪数值模式WAVEWATCH Ⅲ对2000年1月东中国海的风浪场进行了模拟，再现了当时的风浪演化过程。通过计算结果与实测的比较，说明将WAVEWATCH Ⅲ模式应用于东中国海海域进行大区域范围的风浪预报是可行的。 最后分析了WAVEWATCH Ⅲ模式计算得到的有效波高的月平均分布，并利用经验正交函数（EOF）方法对有效波高距平值进行分解，探讨了中国海有效波高的年际变化特征。有效波高距平场的前两个模态的时间系数分布和空间结构与海面风距平场的前两个模态基本相似，说明中国海风、浪之间有很好的相关性。第一模态表现为冬－夏振荡型，反映了冬季有效波高的分布特征及海面风场对有效波高分布的影响。第二模态表现为春－秋振荡，反映了季风转换过渡时期有效波高偏差的分布特征。第三模态反映了中国海地形对有效波高偏差分布的影响。

Napięcia tożsamościowe, tematyczne i formalne w dziele Yasminy Khadry

Wydział Neofilologii Instytut Filologii Romańskiej

O autoconceito de crianças e pré-adolescentes com e sem história de maus-tratos numa amostra de 90 participantes

Dissertação de Mestrado apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Psicologia, especialização em Psicologia da Educação e Intervenção Comunitária.

Fasciathérapie et transformation du rapport à la santé

Dissertação de Mestrado apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Psicopedagogia Perceptiva.

Antropologia e psicoterapia

Tese apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Doutor em Ciências Sociais, especialidade em Antropologia

Pratiques d’infirmière clinicienne et obésité

Tese apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Doutor em Ciências Sociais, especialidade em Psicologia

Hybrid integration and packaging of grating-coupled silicon photonics

This thesis covers both the packaging of silicon photonic devices with fiber inputs and outputs as well as the integration of laser light sources with these same devices. The principal challenge in both of these pursuits is coupling light into the submicrometer waveguides that are the hallmark of silicon-on-insulator (SOI) systems. Previous work on grating couplers is leveraged to design new approaches to bridge the gap between the highly-integrated domain of silicon, the Interconnected world of fiber and the active region of III-V materials. First, a novel process for the planar packaging of grating couplers with fibers is explored in detail. This technology allows the creation of easy-to-use test platforms for laser integration and also stands on its own merits as an enabling technology for next-generation silicon photonics systems. The alignment tolerances of this process are shown to be well-suited to a passive alignment process and for wafer-scale assembly. Furthermore, this technology has already been used to package demonstrators for research partners and is included in the offerings of the ePIXfab silicon photonics foundry and as a design kit for PhoeniX Software’s MaskEngineer product. After this, a process for hybridly integrating a discrete edge-emitting laser with a silicon photonic circuit using near-vertical coupling is developed and characterized. The details of the various steps of the design process are given, including mechanical, thermal, optical and electrical steps. The interrelation of these design domains is also discussed. The construction process for a demonstrator is outlined, and measurements are presented of a series of single-wavelength Fabry-Pérot lasers along with a two-section laser tunable in the telecommunications C-band. The suitability and potential of this technology for mass manufacture is demonstrated, with further opportunities for improvement detailed and discussed in the conclusion.

Development of germanium/silicon integration for near infrared detection

Silicon (Si) is the base material for electronic technologies and is emerging as a very attractive platform for photonic integrated circuits (PICs). PICs allow optical systems to be made more compact with higher performance than discrete optical components. Applications for PICs are in the area of fibre-optic communication, biomedical devices, photovoltaics and imaging. Germanium (Ge), due to its suitable bandgap for telecommunications and its compatibility with Si technology is preferred over III-V compounds as an integrated on-chip detector at near infrared wavelengths. There are two main approaches for Ge/Si integration: through epitaxial growth and through direct wafer bonding. The lattice mismatch of ~4.2% between Ge and Si is the main problem of the former technique which leads to a high density of dislocations while the bond strength and conductivity of the interface are the main challenges of the latter. Both result in trap states which are expected to play a critical role. Understanding the physics of the interface is a key contribution of this thesis. This thesis investigates Ge/Si diodes using these two methods. The effects of interface traps on the static and dynamic performance of Ge/Si avalanche photodetectors have been modelled for the first time. The thesis outlines the original process development and characterization of mesa diodes which were fabricated by transferring a ~700 nm thick layer of p-type Ge onto n-type Si using direct wafer bonding and layer exfoliation. The effects of low temperature annealing on the device performance and on the conductivity of the interface have been investigated. It is shown that the diode ideality factor and the series resistance of the device are reduced after annealing. The carrier transport mechanism is shown to be dominated by generation–recombination before annealing and by direct tunnelling in forward bias and band-to-band tunnelling in reverse bias after annealing. The thesis presents a novel technique to realise photodetectors where one of the substrates is thinned by chemical mechanical polishing (CMP) after bonding the Si-Ge wafers. Based on this technique, Ge/Si detectors with remarkably high responsivities, in excess of 3.5 A/W at 1.55 μm at −2 V, under surface normal illumination have been measured. By performing electrical and optical measurements at various temperatures, the carrier transport through the hetero-interface is analysed by monitoring the Ge band bending from which a detailed band structure of the Ge/Si interface is proposed for the first time. The above unity responsivity of the detectors was explained by light induced potential barrier lowering at the interface. To our knowledge this is the first report of light-gated responsivity for vertically illuminated Ge/Si photodiodes. The wafer bonding approach followed by layer exfoliation or by CMP is a low temperature wafer scale process. In principle, the technique could be extended to other materials such as Ge on GaAs, or Ge on SOI. The unique results reported here are compatible with surface normal illumination and are capable of being integrated with CMOS electronics and readout units in the form of 2D arrays of detectors. One potential future application is a low-cost Si process-compatible near infrared camera.