Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET)

In this paper, we analyze the combined effects of size quantization and device temperature variations (T = 50K to 400 K) on the intrinsic carrier concentration (n(i)), electron concentration (n) and thereby on the threshold voltage (V-th) for thin silicon film (t(si) = 1 nm to 10 nm) based fully-depleted Double-Gate Silicon-on-Insulator MOSFETs. The threshold voltage (V-th) is defined as the gate voltage (V-g) at which the potential at the center of the channel (Phi(c)) begins to saturate (Phi(c) = Phi(c(sat))). It is shown that in the strong quantum confinement regime (t(si) <= 3nm), the effects of size quantization far over-ride the effects of temperature variations on the total change in band-gap (Delta E-g(eff)), intrinsic carrier concentration (n(i)), electron concentration (n), Phi(c(sat)) and the threshold voltage (V-th). On the other hand, for t(si) >= 4 nm, it is shown that size quantization effects recede with increasing t(si), while the effects of temperature variations become increasingly significant. Through detailed analysis, a physical model for the threshold voltage is presented both for the undoped and doped cases valid over a wide-range of device temperatures, silicon film thicknesses and substrate doping densities. Both in the undoped and doped cases, it is shown that the threshold voltage strongly depends on the channel charge density and that it is independent of incomplete ionization effects, at lower device temperatures. The results are compared with the published work available in literature, and it is shown that the present approach incorporates quantization and temperature effects over the entire temperature range. We also present an analytical model for V-th as a function of device temperature (T). (C) 2013 AIP Publishing LLC.

Space vector-based analysis of overmodulation in triangle-comparison based PWM for voltage source inverter

The equivalence of triangle-comparison-based pulse width modulation (TCPWM) and space vector based PWM (SVPWM) during linear modulation is well-known. This paper analyses triangle-comparison based PWM techniques (TCPWM) such as sine-triangle PWM (SPWM) and common-mode voltage injection PWM during overmodulation from a space vector point of view. The average voltage vector produced by TCPWM during overmodulation is studied in the stationary (a-b) reference frame. This is compared and contrasted with the average voltage vector corresponding to the well-known standard two-zone algorithm for space vector modulated inverters. It is shown that the two-zone overmodulation algorithm itself can be derived from the variation of average voltage vector with TCPWM. The average voltage vector is further studied in a synchronously revolving (d-q) reference frame. The RMS value of low-order voltage ripple can be estimated, and can be used to compare harmonic distortion due to different PWM methods during overmodulation. The measured values of the total harmonic distortion (THD) in the line currents are presented at various fundamental frequencies. The relative values of measured current THD pertaining to different PWM methods tally with those of analytically evaluated RMS voltage ripple.

Zero knowledge one time digital signature scheme

In many applications, when communicating with a host, we may or may not be concerned about the privacy of the data but are mainly concerned about the integrity of data being transmitted. This paper presents a simple algorithm based on zero knowledge proof by which the receiver can confirm the integrity of data without the sender having to send the digital signature of the message directly. Also, if the same document is sent across by the same user multiple times, this scheme results in different digital signature each time thus making it a practical one-time signature scheme.

A naturally occurring amino acid substitution in the voltage-dependent sodium channel selectivity filter affects channel gating

The pore of sodium channels contains a selectivity filter made of 4 amino acids, D/E/K/A. In voltage sensitive sodium channel (Nav) channels from jellyfish to human the fourth amino acid is Ala. This Ala, when mutated to Asp, promotes slow inactivation. In some Nav channels of pufferfishes, the Ala is replaced with Gly. We studied the biophysical properties of an Ala-to-Gly substitution (A1529G) in rat Nav1.4 channel expressed in Xenopus oocytes alone or with a beta 1 subunit. The Ala-to-Gly substitution does not affect monovalent cation selectivity and positively shifts the voltage-dependent inactivation curve, although co-expression with a beta 1 subunit eliminates the difference between A1529G and WT. There is almost no difference in channel fast inactivation, but the beta 1 subunit accelerates WT current inactivation significantly more than it does the A1529G channels. The Ala-to-Gly substitution mainly influences the rate of recovery from slow inactivation. Again, the beta 1 subunit is less effective on speeding recovery of A1529G than the WT. We searched Nav channels in numerous databases and noted at least four other independent Ala-to-Gly substitutions in Nav channels in teleost fishes. Thus, the Ala-to-Gly substitution occurs more frequently than previously realized, possibly under selection for alterations of channel gating.

Wide Voltage Input Receiver with Hysteresis Characteristic to Reduce Input Signal Noise Effect

In this paper, an input receiver with a hysteresis characteristic that can work at voltage levels between 0.9 V and 5 V is proposed. The input receiver can be used as a wide voltage range Schmitt trigger also. At the same time, reliable circuit operation is ensured. According to the research findings, this is the first time a wide voltage range Schmitt trigger is being reported. The proposed circuit is compared with previously reported input receivers, and it is shown that the circuit has better noise immunity. The proposed input receiver ends the need for a separate Schmitt trigger and input buffer. The frequency of operation is also higher than that of the previously reported receiver. The circuit is simulated using HSPICE at 035-mu m standard thin oxide technology. Monte Carlo analysis is conducted at different process conditions, showing that the proposed circuit works well for different process conditions at different voltage levels of operation. A noise impulse of (V-CC/2) magnitude is added to the input voltage to show that the receiver receives the correct logic level even in the presence of noise. Here, V-CC is the fixed voltage supply of 3.3 V.

Delay optimized zero-forcing channel shortening algorithm for wireless communication

In Orthogonal Frequency Division Multiplexing and Discrete Multitone transceivers, a guard interval called Cyclic Prefix (CP) is inserted to avoid inter-symbol interference. The length of the CP is usually greater than the impulse response of the channel resulting in a loss of useful data carriers. In order to avoid long CP, a time domain equalizer is used to shorten the channel. In this paper, we propose a method to include a delay in the zero-forcing equalizer and obtain an optimal value of the delay, based on the location of zeros of the channel. The performance of the algorithms is studied using numerical simulations.

Design of double toggle switching mechanisms

Toggle mechanisms are ubiquitous in electrical switches. However, literature for their mechanical design is scarce. This paper defines and classifies the toggle phenomena observed during switching. The concept of double toggle introduced in this paper enables a systematic screening of kinematic structure for the suitability in high performance switches. Seven structural and three kinematic criteria are identified for this purpose. It is also demonstrated that each such feasible kinematic structure lends itself to multiple physical embodiments. Therefore, the theory and procedure presented in this work can be used for design of numerous kinematically distinct mechanisms. One representative mechanical embodiment for a novel double toggle switch, including mass and geometric shape of links has been included in the paper. The switching behavior of the design is validated using Pro/Mechanism (TM). (C) 2013 Elsevier Ltd. All rights reserved.

Design Of Start-up Power Circuit For Control Power Supplies With Wide Input Voltage Variation

This paper presents the design of a start up power circuit for a control power supply (CPS) which feeds power to the sub-systems of High Power Converters (HPC). The sub-systems such as gate drive card, annunciation card, protection and delay card etc; needs to be provided power for the operation of a HPC. The control power supply (CPS) is designed to operate over a wide range of input voltage from 90Vac to 270Vac. The CPS output supplies power at a desired voltage of Vout =24V to the auxiliary sub-systems of the HPC. During the starting, the power supply to the control circuitry of CPS in turn, is obtained using a separate start-up power supply. This paper discusses the various design issues of the start-up power circuit to ensure that start-up and shut down of the CPS occurs reliably. The CPS also maintains the power factor close to unity and low total harmonic distortion in input current. The paper also provides design details of gate drive circuits employed for the CPS as well as the design of on-board power supply for the CPS. Index terms: control power supply, start-up power supply, DSFC, pre-regulator

Comparative Evaluation of Switching and Average Models of a DC-DC Boost Converter for Real-Time Simulation

This paper presents a comparative evaluation of the average and switching models of a dc-dc boost converter from the point of view of real-time simulation. Both the models are used to simulate the converter in real-time on a Field Programmable Gate Array (FPGA) platform. The converter is considered to function over a wide range of operating conditions, and could do transition between continuous conduction mode (CCM) and discontinuous conduction mode (DCM). While the average model is known to be computationally efficient from the perspective of off-line simulation, the same is shown here to consume more logical resources than the switching model for real-time simulation of the dc-dc converter. Further, evaluation of the boundary condition between CCM and DCM is found to be the main reason for the increased consumption of resources by the average model.

A Three-Level Common-Mode Voltage Eliminated Inverter With Single DC Supply Using Flying Capacitor Inverter and Cascaded H-Bridge

A three-level common-mode voltage eliminated inverter with single dc supply using flying capacitor inverter and cascaded H-bridge has been proposed in this paper. The three phase space vector polygon formed by this configuration and the polygon formed by the common-mode eliminated states have been discussed. The entire system is simulated in Simulink and the results are experimentally verified. This system has an advantage that if one of devices in the H-bridge fails, the system can still be operated as a normal three-level inverter at full power. This inverter has many other advantages like use of single dc supply, making it possible for a back-to-back grid-tied converter application, improved reliability, etc.

A Quick-Simulation Tool for Induction Motor Drives Controlled Using Advanced Space-Vector-Based PWM Techniques

Space-vector-based pulse width modulation (PWM) for a voltage source inverter (VSI) offers flexibility in terms of different switching sequences. Numerical simulation is helpful to assess the performance of a PWM method before actual implementation. A quick-simulation tool to simulate a variety of space-vector-based PWM strategies for a two-level VSI-fed squirrel cage induction motor drive is presented. The simulator is developed using C and Python programming languages, and has a graphical user interface (GUI) also. The prime focus being PWM strategies, the simulator developed is 40 times faster than MATLAB in terms of the actual time taken for a simulation. Simulation and experimental results are presented on a 5-hp ac motor drive.

Chemical vapor detection using nonlinear electrical properties of carbon nanotube bundles

We demonstrate the electrical transport behavior of carbon nanotubes (CNTs) upon exposure to organic analytes (namely ethanol, benzene, acetone and toluene). The resulting nonlinear current-voltage characteristics revealed a power law dependence of the differential conductivity on the applied bias voltage. Moreover, suppression of differential conductivity at zero bias is found to be dependent on different selective analytes. The power law exponent values have been monitored before, during and after exposure to the chemicals, which revealed a reversible change in the number of electron conducting channels. Therefore, the reduction in the number of conductive paths can be attributed to the interaction of the chemical analyte on the CNT surfaces, which causes a decrease in the differential conductivity of the CNT sample. These results demonstrate chemical selectivity of CNTs due to varying electronic interaction with different chemical analytes.

Zero-sum risk-sensitive stochastic games on a countable state space

Infinite horizon discounted-cost and ergodic-cost risk-sensitive zero-sum stochastic games for controlled Markov chains with countably many states are analyzed. Upper and lower values for these games are established. The existence of value and saddle-point equilibria in the class of Markov strategies is proved for the discounted-cost game. The existence of value and saddle-point equilibria in the class of stationary strategies is proved under the uniform ergodicity condition for the ergodic-cost game. The value of the ergodic-cost game happens to be the product of the inverse of the risk-sensitivity factor and the logarithm of the common Perron-Frobenius eigenvalue of the associated controlled nonlinear kernels. (C) 2013 Elsevier B.V. All rights reserved.

Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications

Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.

Zero-Sum Stochastic Games with Partial Information and Average Payoff

We consider a discrete time partially observable zero-sum stochastic game with average payoff criterion. We study the game using an equivalent completely observable game. We show that the game has a value and also we present a pair of optimal strategies for both the players.