Dynamic SIF of interface crack between two dissimilar viscoelastic bodies under impact loading

In this paper, the transient dynamic stress intensity factor (SIF) is determined for an interface crack between two dissimilar half-infinite isotropic viscoelastic bodies under impact loading. An anti-plane step loading is assumed to act suddenly on the surface of interface crack of finite length. The stress field incurred near the crack tip is analyzed. The integral transformation method and singular integral equation approach are used to get the solution. By virtue of the integral transformation method, the viscoelastic mixed boundary problem is reduced to a set of dual integral equations of crack open displacement function in the transformation domain. The dual integral equations can be further transformed into the first kind of Cauchy-type singular integral equation (SIE) by introduction of crack dislocation density function. A piecewise continuous function approach is adopted to get the numerical solution of SIE. Finally, numerical inverse integral transformation is performed and the dynamic SIF in transformation domain is recovered to that in time domain. The dynamic SIF during a small time-interval is evaluated, and the effects of the viscoelastic material parameters on dynamic SIF are analyzed.

Marangoni-Benard instability with the exchange of evaporation at liquid-vapour interface

A new two-sided model rather than the one-sided model in previous works is put forward. The linear instability analysis is performed on the Marangoni-Benard convection in the two-layer system with an evaporation interface. We define a new evaporation Biot number which is different from that in the one-sided model, and obtain the curves of critical Marangoni number versus wavenumber. The influence of evaporation velocity and Biot number on the system is discussed and a new phenomenon uninterpreted before is now explained from our numerical results.

A crack perpendicular to and terminating at a bimaterial interface

Using dislocation simulation approach, the basic equation for a finite crack perpendicular to and terminating at a bimaterial interface is formulated. A novel expansion method is proposed for solving the problem. The complete solution to the problem, including the explicit formulae for the T stresses ahead of the crack tip and the stress intensity factors are presented. The stress held characteristics are analysed in detail. It is found that normal stresses sigma(x) and sigma(y) ahead of the crack tip, are characterised by Q fields if the crack is within a stiff material and the parameters \p(T)\ and \q(T)\ are very small, where Q is a generalised stress intensity factor for a crack normal to and terminating at the interface. If the crack is within a weak material, the normal stresses sigma(x) and sigma(y) are dominated by the Q field plus T stress.

Combined Effects of Silica Filler and Its Interface in Epoxy Resin

In this paper, mechanical properties of silica-filled epoxy resin are tested. The tests show that at elevated temperatures, the material’s properties (e.g. yield stress, flow stress, etc.) vary immonotonically with filler volume fraction. Nanoindentation test results suggest that an interface region, stronger than the matrix, is formed in the materials. The formation of the interface has positive effects on the yield strengths of materials. The addition of particles in the matrix produces a large disturbance in stress distribution, leading to stress concentration in the matrix. The stress concentration has negative effects on the yield strengths of materials. The calculation demonstrates that the maximum stress in samples varies immonotonically with particulate concentration. So, the immonotonic variation of mechanical behavior of materials may be rooted in the contradictory effects of the interface region and the stress concentration caused by particulate addition.

The scattering of general SH plane wave by interface crack between two dissimilar viscoelastic bodies

The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.

Interface crack problems with strain gradient effects

In this paper, the strain gradient theory proposed by Chen and Wang (2001 a, 2002b) is used to analyze an interface crack tip field at micron scales. Numerical results show that at a distance much larger than the dislocation spacing the classical continuum plasticity is applicable; but the stress level with the strain gradient effect is significantly higher than that in classical plasticity immediately ahead of the crack tip. The singularity of stresses in the strain gradient theory is higher than that in HRR field and it slightly exceeds or equals to the square root singularity and has no relation with the material hardening exponents. Several kinds of interface crack fields are calculated and compared. The interface crack tip field between an elastic-plastic material and a rigid substrate is different from that between two elastic-plastic solids. This study provides explanations for the crack growth in materials by decohesion at the atomic scale.

Asymptotic analysis for a crack on interface of damaged materials

An asymptotic analysis for a crack lying on the interface of a damaged plastic material and a linear elastic material is presented in this paper. The present results show that the stress distributions along the crack tip are quite similar to those with HRR singularity field and the crack faces open obviously. Material constants n, mu and mo are varied to examine their effects on the resulting stress distributions and displacement distributions in the damaged plastic region. It is found that the stress components sigma(rr), sigma(theta theta), sigma(r theta) and sigma(e) are slightly affected by the changes of material constants n, mu and m(0), but the damaged plastic region are greatly disturbed by these material parameters.

An overview of air-sea interface process studies

Recent progress in the study of air-sea interface processes for momentum, heat, moisture and mass transfer are reviewed in the present article. Except for turbulent structure, we have analysed the other physical mechanisms occurring in the wave boundary layer, such as the roles of the sea surface state, droplets and bubbles due to wave breaking, which at least partly account for the existing discrepancies between theory and observations. The experiments, both over the ocean and in the laboratory, are described briefly. In conclusion, a few perspective trends in this area are suggested for further investigation.

Determinación del período crítico de competencia de malezas en el cultivo del maní (Arachis hypogaea L.) variedad Georgia runner

El presente trabajo se planificó con la finalidad de determinar el periodo crítico de competencia de malezas sobre el rendimiento del cultivo del maní (Arachis hypogaea L.) variedad Georgia Runner, para lo cual se incluyeron tratamientos enmalezados y limpios (hasta los 15, 30, 45, 60, 75 y 100 días después de la siembra) bajo las condiciones ecológicas de la finca La Concepción, Nagarote León. El ensayo se estableció en la siembra de postrera de 1999, utilizándose un diseño de bloques completos al azar con cuatro repeticiones. El resultado estadístico realizado a la variable de rendimiento mostró diferencias significativas entre los tratamientos evaluados, alcanzándose el mayor rendimiento con el tratamientos 12 (limpio hasta los 100 dds) con 2 281.3 kg/ha y sin diferencias significativas con el tratamiento 10 (limpio hasta los 60 dds) con 2 262.5 kg/ha y el tratamiento 11 (limpio hasta los 75 dds) con 2 275 kg/ha y los rendimientos más bajos se alcanzaron en el T6 (enmalezado hasta los lOO dds) con 562.5 kg/ha y el tratamiento 7 (limpio hasta los 15 días) con 600 kg/ha. Así mismo, se llegó a la conclusión de que el período crítico de competencia de maleza para el cultivo del maní se inicia a partir de los 15 y termina hasta los 60 días después de la siembra.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Evaluación de niveles de fertilización química en el cultivo del maní (Arachis hypogaea L.) su incidencia en el rendimiento y calidad de la cosecha

El presente trabajo se realizó con el propósito de evaluar niveles de fertilización de nitrógeno, fósforo, potasio como elementos mayores y azufre, calcio y boro como elementos menores sobre el crecimiento, rendimiento y calidad del cultivo del maní utilizando la variedad George Runner la cual comprende un ciclo de 120-130 días bajo las condiciones ecológicas de la finca San José, León. El ensayo se estableció en la época de postrera del año 2000 utilizándose un diseño de bloques completos al azar con 6 tratamientos y 6 repeticiones; Encontrándose que la variable altura de planta no presento diferencias significativas a los 35 y 50 días, pero si se encontraron diferencias significativas a los 65 y 80 días después de la siembra, encontrándose que en esta última evaluación el tratamiento C (fertilización edáfica máxima más foliar) fue el que obtuvo la mayor altura con 41.6 cm. El diámetro del tallo presento diferencias significativas en todas las evaluaciones realizadas, en el cual a los 80 dds el tratamiento A (fertilización edáfica mínima más foliar) fue el que obtuvo el mayor diámetro con 4.9 mm. Para el número de hojas por planta se encontraron diferencias significativas en todas las evaluaciones realizadas, encontrándose que en la última evaluación el tratamiento C (fertilización edáfica máxima más foliar) obtuvo el mayor número de hojas con 286. De las variables evaluadas para el rendimiento y sus principales componentes se encontró diferencias significativas para el número de cápsulas en el cual el tratamiento C obtuvo el mayor número de cápsulas por planta con 139 y en el rendimiento de grano el tratamiento C fue el que obtuvo el mayor rendimiento con 4297 kg/ha.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.