Space vector based bus clamped PWM algorithms for three level inverters: implementation, performance analysis and application considerations

This paper describes the different types of space vector based bus clamped PWM algorithms for three level inverters. A novel bus clamp PWM algorithm for low modulation indices region is also presented. The principles and switching sequences of all the types of bus clamped algorithms for high switching frequency are presented. Synchronized version of the PWM sequences for high power applications where switching frequency is low is also presented. The implementation details on DSP based digital controller and experimental results are presented. The THD of the output waveforms is studied for the entire operating region and is compared with the conventional space vector PWM technique. The bus clamped techniques can be used to reduce the switching losses or to improve the output voltage quality or both.. Different issues dominate depending on the type of application and power rating of the inverters. The results presented in this paper can be used for judicious use of the PWM techniques, which result in improved system efficiency and performance.

Circulating power test setup for a PWM rectifier motor drive

Power converters burn-in test consumes large amount of energy, which increases the cost of testing, and certification, in medium and high power application. A simple test configuration to test a PWM rectifier induction motor drive, using a Doubly Fed Induction Machine (DFIM) to circulate power back to the grid for burn-in test is presented. The test configuration makes use of only one power electronic converter, which is the converter to be tested. The test method ensures soft synchronization of DFIM and Squirrel Cage Induction Machine (SCIM). A simple volt per hertz control of the drive is sufficient for conducting the test. To synchronize the DFIM with SCIM, the rotor terminal voltage of DFIM is measured and used as an indication of speed mismatch between DFIM and SCIM. The synchronization is done when the DFIM rotor voltage is at its minimum. Analysis of the DFIM characteristics confirms that such a test can be effectively performed with smooth start up and loading of the test setup. After synchronization is obtained, the speed command to SCIM is changed in order to load the setup in motoring or regenerative mode of operation. The experimental results are presented that validates the proposed test method.

Design Of Start-up Power Circuit For Control Power Supplies With Wide Input Voltage Variation

This paper presents the design of a start up power circuit for a control power supply (CPS) which feeds power to the sub-systems of High Power Converters (HPC). The sub-systems such as gate drive card, annunciation card, protection and delay card etc; needs to be provided power for the operation of a HPC. The control power supply (CPS) is designed to operate over a wide range of input voltage from 90Vac to 270Vac. The CPS output supplies power at a desired voltage of Vout =24V to the auxiliary sub-systems of the HPC. During the starting, the power supply to the control circuitry of CPS in turn, is obtained using a separate start-up power supply. This paper discusses the various design issues of the start-up power circuit to ensure that start-up and shut down of the CPS occurs reliably. The CPS also maintains the power factor close to unity and low total harmonic distortion in input current. The paper also provides design details of gate drive circuits employed for the CPS as well as the design of on-board power supply for the CPS. Index terms: control power supply, start-up power supply, DSFC, pre-regulator

Analysis and design of split-capacitor resistive-inductive passive damping for LCL filters in grid-connected inverters

Grid-connected inverters require a third-order LCL filter to meet standards such as the IEEE Std. 519-1992 while being compact and cost-effective. LCL filter introduces resonance, which needs to be damped through active or passive methods. Passive damping schemes have less control complexity and are more reliable. This study explores the split-capacitor resistive-inductive (SC-RL) passive damping scheme. The SC-RL damped LCL filter is modelled using state space approach. Using this model, the power loss and damping are analysed. Based on the analysis, the SC-RL scheme is shown to have lower losses than other simpler passive damping methods. This makes the SC-RL scheme suitable for high power applications. A method for component selection that minimises the power loss in the damping resistors while keeping the system well damped is proposed. The design selection takes into account the influence of switching frequency, resonance frequency and the choice of inductance and capacitance values of the filter on the damping component selection. The use of normalised parameters makes it suitable for a wide range of design applications. Analytical results show the losses and quality factor to be in the range of 0.05-0.1% and 2.0-2.5, respectively, which are validated experimentally.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

A 3.8-V earth-abundant sodium battery electrode

Rechargeable lithium batteries have ushered the wireless revolution over last two decades and are now matured to enable green automobiles. However, the growing concern on scarcity and large-scale applications of lithium resources have steered effort to realize sustainable sodium-ion batteries, Na and Fe being abundant and low-cost charge carrier and redox centre, respectively. However, their performance is limited owing to low operating voltage and sluggish kinetics. Here we report a hitherto-unknown material with entirely new composition and structure with the first alluaudite-type sulphate framework, Na2Fe2(SO4)(3), registering the highest-ever Fe3+/ Fe2+ redox potential at 3.8V (versus Na, and hence 4.1V versus Li) along with fast rate kinetics. Rare-metal-free Na-ion rechargeable battery system compatible with the present Li-ion battery is now in realistic scope without sacrificing high energy density and high power, and paves way for discovery of new earth-abundant sustainable cathodes for large-scale batteries.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Effect of Coldfog on the Corona Induced Degradation of Silicone Rubber Samples

Corona is an unavoidable phenomena in high voltage power transmission system, in spite of suitably designed insulator accessories and transmission line hardware. It is a proven fact that the continuous occurrence of corona can subject the polymeric insulator to a severe degradation. Further, moisture in the air has a positive influence on the corona activity. This paper presents the methodology to evaluate the corona performance of the silicone rubber housing material with simultaneous application of cold fog. Analysis conducted after corona treatment by the Fourier Transform Infrared Spectroscopy (FTIR) present an interesting results showing a higher hydroxylation of sample surface under the moisture application than in the normal condition for both AC and DC excitation. FTIR spectrum also indicates the presence of nitric acid on the treated surface with coldfog application. Results obtained from SEM analysis are also presented.

A low-power, low-cost soil-moisture sensor using dual-probe heat-pulse technique

This paper presents the development and testing of an integrated low-power and low-cost dual-probe heat-pulse (DPHP) soil-moisture sensor in view of the electrical power consumed and affordability in developing countries. A DPHP sensor has two probes: a heater and a temperature sensor probe spaced 3 mm apart from the heater probe. Supply voltage of 3.3V is given to the heater-coil having resistance of 33 Omega power consumption of 330 mW, which is among the lowest in this category of sensors. The heater probe is 40 mm long with 2 mm diameter and hence is stiff enough to be inserted into the soil. The parametric finite element simulation study was performed to ensure that the maximum temperature rise is between 1 degrees C and 5 degrees C for wet and dry soils, respectively. The discrepancy between the simulation and experiment is less than 3.2%. The sensor was validated with white clay and tested with red soil samples to detect volumetric water-content ranging from 0% to 30%. The sensor element is integrated with low-power electronics for amplifying the output from thermocouple sensor and TelosB mote for wireless communication. A 3.7V lithium ion battery with capacity of 1150 mAh is used to power the system. The battery is charged by a 6V and 300 mA solar cell array. Readings were taken in 30 min intervals. The life-time of DPHP sensor node is around 3.6 days. The sensor, encased in 30 mm x 20 mm x 10 mm sized box, and integrated with electronics was tested independently in two separate laboratories for validating as well as investigating the dependence of the measurement of soil-moisture on the density of the soil. The difference in the readings while repeating the experiments was found out to be less than 0.01%. Furthermore, the effect of ambient temperature on the measurement of soil-moisture is studied experimentally and computationally. (C) 2015 Elsevier B.V. All rights reserved.

Optical-Phonon-Limited High-Field Transport in Layered Materials

An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured v(sat) is discussed and compared with the theoretically predicted dependence over a range of temperatures.

High temperature thermoelectric properties of Zr and Hf based transition metal dichalcogenides: A first principles study

We investigate the electronic and thermal transport properties of bulk MX2 compounds (M = Zr, Hf and X = S, Se) by first-principles calculations and semi-classical Boltzmann transport theory. The band structure shows the confinement of heavy and light bands along the out of plane and in-plane directions, respectively. This results in high electrical conductivity (sigma) and large thermopower leading to a high power factor (S-2 sigma) for moderate n-type doping. The phonon dispersion demonstrates low frequency flat acoustical modes, which results in low group velocities (v(g)). Consequently, lowering the lattice thermal conductivity (kappa(latt)) below 2 W/m K. Low kappa(latt) combined with high power factor results in ZT > 0.8 for all the bulk MX2 compounds at high temperature of 1200 K. In particular, the ZT(max) of HfSe2 exceeds 1 at 1400 K. Our results show that Hf/Zr based dichalcogenides are very promising for high temperature thermoelectric application. (C) 2015 AIP Publishing LLC.

COUPLED OPTICAL-THERMAL-FLUID MODELING OF A DIRECTLY HEATED TUBULAR SOLAR RECEIVER FOR SUPERCRITICAL CO2 BRAYTON CYCLE

Recent studies have evaluated closed-loop supercritical carbon dioxide (s-CO2) Brayton cycles to be a higher energy density system in comparison to conventional superheated steam Rankine systems. At turbine inlet conditions of 923K and 25 MPa, high thermal efficiency (similar to 50%) can be achieved. Achieving these high efficiencies will make concentrating solar power (CSP) technologies a competitive alternative to current power generation methods. To incorporate a s-CO2 Brayton power cycle in a solar power tower system, the development of a solar receiver capable of providing an outlet temperature of 923 K (at 25 MPa) is necessary. The s-CO2 will need to increase in temperature by similar to 200 K as it passes through the solar receiver to satisfy the temperature requirements of a s-CO2 Brayton cycle with recuperation and recompression. In this study, an optical-thermal-fluid model was developed to design and evaluate a tubular receiver that will receive a heat input similar to 2 MWth from a heliostat field. The ray-tracing tool SolTrace was used to obtain the heat-flux distribution on the surfaces of the receiver. Computational fluid dynamics (CFD) modeling using the Discrete Ordinates (DO) radiation model was used to predict the temperature distribution and the resulting receiver efficiency. The effect of flow parameters, receiver geometry and radiation absorption by s-CO2 were studied. The receiver surface temperatures were found to be within the safe operational limit while exhibiting a receiver efficiency of similar to 85%.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.

激光诱发活塞的热负荷

活塞的热疲劳性能对柴油发动机的全寿命至关重要。由于能量有限和可控性差等缺点，现有实验系统均不能满意地进行活塞热负荷模拟实验。为此，提出并建立了一套激光诱发活塞热负荷的实验系统。该系统通过对激光束的空间整形，使之投射到活塞表面后诱发的温度场分布满足特定要求。基于PROFIBUS-DP现场总线技术实现了系统集成和实验过程的全反馈控制。针对活塞的典型热负荷条件，即高周热疲劳和热冲击分别进行实验，以模拟正常工作循环和“启动一停车”等热负荷或转速突变工况。通过设置加热一冷却周期或上限下限温度，可以获得相应的热负荷模拟实验效果。研究结果表明，采用经光束整形的激光进行活塞热负荷模拟实验具有周期短、可控性好等优点。 

Laser micromachining of thin films for optoelectronic devices and packages

Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin films are proposed as mechanical components to locate fibres and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (i) laser cutting a track in a SiC coated Si wafer, (ii) undercutting by anisotropic silicon etching using KOH in water, and (iii) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapour deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.