Pre-investigation of water electrolysis for flexible energy storage at large scales: the case of the Spanish power system

This report analyzes the basis of hydrogen and power integration strategies, by using water electrolysis processes as a means of flexible energy storage at large scales. It is a prospective study, where the scope is to describe the characteristics of current power systems (like the generation technologies, load curves and grid constraints), and define future scenarios of hydrogen for balancing the electrical grids, considering the efficiency, economy and easiness of operations. We focus in the "Spanish case", which is a good example for planning the transition from a power system holding large reserve capacities, high penetration of renewable energies and limited interconnections, to a more sustainable energy system being capable to optimize the volumes, the regulation modes, the utilization ratios and the impacts of the installations. Thus, we explore a novel aspect of the "hydrogen economy" which is based in the potentials of existing power systems and the properties of hydrogen as energy carrier, by considering the electricity generation and demand globally and determining the optimal size and operation of the hydrogen production processes along the country; e.g. the cost production of hydrogen becomes viable for a base-load scenario with 58 TWh/year of power surplus at 0.025 V/kWh, and large number electrolyzer plants (50 MW) running in variable mode (1-12 kA/m2)

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Numerical modeling of electromagnetic coupling phenomena in the vicinities of overhead power transmission lines.

Electromagnetic coupling phenomena between overhead power transmission lines and other nearby structures are inevitable, especially in densely populated areas. The undesired effects resulting from this proximity are manifold and range from the establishment of hazardous potentials to the outbreak of alternate current corrosion phenomena. The study of this class of problems is necessary for ensuring security in the vicinities of the interaction zone and also to preserve the integrity of the equipment and of the devices there present. However, the complete modeling of this type of application requires the three- -dimensional representation of the region of interest and needs specific numerical methods for field computation. In this work, the modeling of problems arising from the flow of electrical currents in the ground (the so-called conductive coupling) will be addressed with the finite element method. Those resulting from the time variation of the electromagnetic fields (the so-called inductive coupling) will be considered as well, and they will be treated with the generalized PEEC (Partial Element Equivalent Circuit) method. More specifically, a special boundary condition on the electric potential is proposed for truncating the computational domain in the finite element analysis of conductive coupling problems, and a complete PEEC formulation for modeling inductive coupling problems is presented. Test configurations of increasing complexities are considered for validating the foregoing approaches. These works aim to provide a contribution to the modeling of this class of problems, which tend to become common with the expansion of power grids.

Towards Batteryless Cardiac Implantable Electronic Devices – The Swiss Way

Energy harvesting devices are widely discussed as an alternative power source for todays active implantable medical devices. Repeated battery replacement procedures can be avoided by extending the implants life span, which is the goal of energy harvesting concepts. This reduces the risk of complications for the patient and may even reduce device size. The continuous and powerful contractions of a human heart ideally qualify as a battery substitute. In particular, devices in close proximity to the heart such as pacemakers, defibrillators or bio signal (ECG) recorders would benefit from this alternative energy source. The clockwork of an automatic wristwatch was used to transform the hearts kinetic energy into electrical energy. In order to qualify as a continuous energy supply for the consuming device, the mechanism needs to demonstrate its harvesting capability under various conditions. Several in-vivo recorded heart motions were used as input of a mathematical model to optimize the clockworks original conversion efficiency with respect to myocardial contractions. The resulting design was implemented and tested during in-vitro and in-vivo experiments, which demonstrated the superior sensitivity of the new design for all tested heart motions.

Report of Technical Group on Electrical Transmission and Systems.

At head of title FCST energy R&D goals study.

Electrical generating plant availability : staff report.

Cover title.

The future of photovoltaic energy conversion in developing countries /

"Work Performed Under Contract No. EG-77-C-01-4042."

Direct energy conversion devices : a literature search /

Included are 208 unclassified references on nuclear direct energy conversion devices. Major emphasis is placed on auxiliary power devices suitable for use in satellites including reports on nuclear batteries, thermoelectric cells, thermionic conversion, and all phases of the SNAP program, although not all SNAP devices employ direct conversion. This search supersedes a previous search, TID-3540, Isotopic Power and Thermionic Conversion, compiled by Raymond L. Scott in December 1959.

Direct energy conversion devices : a literature search /

Included are 344 unclassified references on devices utilizing nuclear energy in the production of auxiliary power. The coverage includes nuclear batteries, thermoelectric cells, thermionic cells, and all phases of the SNAP program, although not all SNAP devices employ direct conversion. References from Nuclear Science Abstracts (NSA) through December 15, 1961, are included.

Systems for nuclear auxiliary power (SNAP) : a literature search /

U.S. Atomic Energy Commission Report No. TID-3561(REV. 4).

Electrical industries: 1902.

The reports, each with special t.-p., included in this work, have been issued also separately.

Combined desalination and power generation using coal energy.

Phase I report. Site selection and estimated water costs based on current technology. Phase II report. Investigation of emerging technology, by-product recovery, and very large capacities. Period of performance: June 1965-Oct. 1966.

Proceedings of a seminar on Advanced Energy Sources and Conversion Techniques... 3-7 November, 1958.

"Volume I contains all unclassified papers; Volume II contains only classified material."

Investigation of new concepts for microwave power generation (plasma studies) /

"December 1963."

Proceedings of the Ocean Thermal Conversion (OTEC) Biofouling and Corrosion Symposium, October 10-12, 1977, Seattle, Washington /

Mode of access: Internet.