Heavy ion irradiation effects in zirconium nitride

Polycrystalline zirconium nitride (ZrN) samples were irradiated with He +, Kr ++, and Xe ++ ions to high (>1·10 16 ions/cm 2) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nanoindentation. Nanoindentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples.

Mechanism for cross-linking polychloroprene with ethylene thiourea and zinc oxide

An investigation into the mechanism by which ethylene thiourea (ETU) cross-links polychloroprene (CR) in combination with zinc oxide (ZnO) was undertaken. This was achieved through an examination of the mechanisms of crosslinking CR with ETU and ZnO separately and in unison. Spectroscopic and physical characterization techniques were employed to probe the cross-linking mechanisms of CRusing other standard rubber accelerators and model compounds with analogous structures and functionalities to ETU. These investigations have resulted in the proposal of a new mechanism by which ETU and ZnO can synergistically cross-link CR, in addition to providing new evidence to support concomitant mechanisms already published for cross-linking CR.

Analysis and Data Mining of Lead-Zinc Ore Data

This paper presents the results of our data mining study of Pb-Zn (lead-zinc) ore assay records from a mine enterprise in Bulgaria. We examined the dataset, cleaned outliers, visualized the data, and created dataset statistics. A Pb-Zn cluster data mining model was created for segmentation and prediction of Pb-Zn ore assay data. The Pb-Zn cluster data model consists of five clusters and DMX queries. We analyzed the Pb-Zn cluster content, size, structure, and characteristics. The set of the DMX queries allows for browsing and managing the clusters, as well as predicting ore assay records. A testing and validation of the Pb-Zn cluster data mining model was developed in order to show its reasonable accuracy before beingused in a production environment. The Pb-Zn cluster data mining model can be used for changes of the mine grinding and floatation processing parameters in almost real-time, which is important for the efficiency of the Pb-Zn ore beneficiation process. ACM Computing Classification System (1998): H.2.8, H.3.3.

Pore confinement effects and stabilization of carbon nitride oligomers in macroporous silica for photocatalytic hydrogen production

An ordered macroporous host (mac-SiO2) has been used to prevent aggregation of layered photocatalysts based on carbon nitride. Using typical carbon nitride synthesis conditions, cyanamide was condensed at 550 °C in the presence and absence of mac-SiO2. Condensation in the absence of mac-SiO2 results in materials with structural characteristics consistent with the carbon nitride, melon, accompanied by ca. 2 wt% carbonization. For mac-SiO2 supported materials, condensation occurs with greater carbonization (ca. 6 wt%). On addition of 3 wt% Pt cocatalyst photocatalytic hydrogen production under visible light is found to be up to 10 times greater for the supported composites. Time-resolved photoluminescence spectroscopy shows that excited state relaxation is more rapid for the mac-SiO2 supported materials suggesting faster electron-hole recombination and that supported carbon nitride does not exhibit improved charge separation. CO2 temperature programmed desorption indicates that enhanced photoactivity of supported carbon nitride is attributable to an increased surface area compared to bulk carbon nitride and an increase in the concentration of weakly basic catalytic sites, consistent with carbon nitride oligomers.

Fe-doped and -mediated graphitic carbon nitride nanosheets for enhanced photocatalytic performance under natural sunlight

Herein, we demonstrate the synthesis of highly efficient Fe-doped graphitic carbon nitride (g-C3N4) nanosheets via a facile and cost effective method. The synthesized Fe-doped g-C3N4 nanosheets were well characterized by various analytical techniques. The results revealed that the Fe exists mainly in the +3 oxidation state in the Fe-doped g-C3N4 nanosheets. Fe doping of g-C3N4 nanosheets has a great influence on the electronic and optical properties. The diffuse reflectance spectra of Fe-doped g-C3N4 nanosheets exhibit red shift and increased absorption in the visible light range, which is highly beneficial for absorbing the visible light in the solar spectrum. More significantly, the Fe-doped g-C3N4 nanosheets exhibit greatly enhanced photocatalytic activity for the degradation of Rhodamine B under sunlight irradiation. The photocatalytic activity of 2 mol% Fe-doped g-C3N4 nanosheets is almost 7 times higher than that of bulk g-C3N4 and 4.5 times higher than that of pure g-C3N4 nanosheets. A proposed mechanism for the enhanced photocatalytic activity of Fe-doped g-C3N4 nanosheets was investigated by trapping experiments. The synthesized photocatalysts are highly stable even after five successive experimental runs. The enhanced photocatalytic performance of Fe-doped g-C3N4 nanosheets is due to high visible light response, large surface area, high charge separation and charge transfer. Therefore, the Fe-doped g-C3N4 photocatalyst is a promising candidate for energy conversion and environmental remediation.

Enhanced zinc oxide and graphene nanostructures for electronics and sensing applications

Zinc oxide and graphene nanostructures are important technological materials because of their unique properties and potential applications in future generation of electronic and sensing devices. This dissertation investigates a brief account of the strategies to grow zinc oxide nanostructures (thin film and nanowire) and graphene, and their applications as enhanced field effect transistors, chemical sensors and transparent flexible electrodes. Nanostructured zinc oxide (ZnO) and low-gallium doped zinc oxide (GZO) thin films were synthesized by a magnetron sputtering process. Zinc oxide nanowires (ZNWs) were grown by a chemical vapor deposition method. Field effect transistors (FETs) of ZnO and GZO thin films and ZNWs were fabricated by standard photo and electron beam lithography processes. Electrical characteristics of these devices were investigated by nondestructive surface cleaning, ultraviolet irradiation treatment at high temperature and under vacuum. GZO thin film transistors showed a mobility of ∼5.7 cm2/V·s at low operation voltage of <5 V and a low turn-on voltage of ∼0.5 V with a sub threshold swing of ∼85 mV/decade. Bottom gated FET fabricated from ZNWs exhibit a very high on-to-off ratio (∼106) and mobility (∼28 cm2/V·s). A bottom gated FET showed large hysteresis of ∼5.0 to 8.0 V which was significantly reduced to ∼1.0 V by the surface treatment process. The results demonstrate charge transport in ZnO nanostructures strongly depends on its surface environmental conditions and can be explained by formation of depletion layer at the surface by various surface states. A nitric oxide (NO) gas sensor using single ZNW, functionalized with Cr nanoparticles was developed. The sensor exhibited average sensitivity of ∼46% and a minimum detection limit of ∼1.5 ppm for NO gas. The sensor also is selective towards NO gas as demonstrated by a cross sensitivity test with N2, CO and CO2 gases. Graphene film on copper foil was synthesized by chemical vapor deposition method. A hot press lamination process was developed for transferring graphene film to flexible polymer substrate. The graphene/polymer film exhibited a high quality, flexible transparent conductive structure with unique electrical-mechanical properties; ∼88.80% light transmittance and ∼1.1742Ω/sq k sheet resistance. The application of a graphene/polymer film as a flexible and transparent electrode for field emission displays was demonstrated.

Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 Hz--3 Mhz and temperature range 77K--324K

Electronic noise has been investigated in AlxGa1−x N/GaN Modulation-Doped Field Effect Transistors (MODFETs) of submicron dimensions, grown for us by MBE (Molecular Beam Epitaxy) techniques at Virginia Commonwealth University by Dr. H. Morkoç and coworkers. Some 20 devices were grown on a GaN substrate, four of which have leads bonded to source (S), drain (D), and gate (G) pads, respectively. Conduction takes place in the quasi-2D layer of the junction (xy plane) which is perpendicular to the quantum well (z-direction) of average triangular width ∼3 nm. A non-doped intrinsic buffer layer of ∼5 nm separates the Si-doped donors in the AlxGa1−xN layer from the 2D-transistor plane, which affords a very high electron mobility, thus enabling high-speed devices. Since all contacts (S, D, and G) must reach through the AlxGa1−xN layer to connect internally to the 2D plane, parallel conduction through this layer is a feature of all modulation-doped devices. While the shunting effect may account for no more than a few percent of the current IDS, it is responsible for most excess noise, over and above thermal noise of the device. ^ The excess noise has been analyzed as a sum of Lorentzian spectra and 1/f noise. The Lorentzian noise has been ascribed to trapping of the carriers in the AlxGa1−xN layer. A detailed, multitrapping generation-recombination noise theory is presented, which shows that an exponential relationship exists for the time constants obtained from the spectral components as a function of 1/kT. The trap depths have been obtained from Arrhenius plots of log (τT2) vs. 1000/T. Comparison with previous noise results for GaAs devices shows that: (a) many more trapping levels are present in these nitride-based devices; (b) the traps are deeper (farther below the conduction band) than for GaAs. Furthermore, the magnitude of the noise is strongly dependent on the level of depletion of the AlxGa1−xN donor layer, which can be altered by a negative or positive gate bias VGS. ^ Altogether, these frontier nitride-based devices are promising for bluish light optoelectronic devices and lasers; however, the noise, though well understood, indicates that the purity of the constituent layers should be greatly improved for future technological applications. ^

(Table 2) Zinc complexation data from POLARSTERN cruise ANT-XXIV/3

The speciation of dissolved zinc (Zn) was investigated by voltammetry in the Atlantic sector of the Southern Ocean along two transects across the major frontal systems: along the Zero Meridian and across the Drake Passage. In the Southern Ocean south of the APF we found detectable labile inorganic Zn throughout the surface waters in contrast to studies from lower latitudes. Using a combination of ASV titrations and pseudopolarography revealed the presence of significant concentration of electrochemically inert Zn ligands throughout the Southern Ocean. These ligands however were nearly always saturated due to the presence of excess concentrations of dissolved Zn that were associated with the high nutrient waters south of the Antarctic Polar Front (APF). Only in surface waters did the concentration of Zn complexing ligands exceed the dissolved Zn concentrations suggesting a biological source for these ligands. Our findings have clear implications for the biogeochemical cycling of Zn and for the interpretation of paleo records utilizing Zn in opal as a tracer of Zn speciation in the water column.

Dissolved Zinc in the Southern Ocean measured on water bottle samples during POLARSTERN cruise ANT-XXIV/3

The distribution of dissolved zinc (Zn) was investigated in the Atlantic sector of the Southern Ocean in the austral autumn of 2008 as part of the IPY GEOTRACES expedition ZERO & DRAKE. Research focused on transects across the major frontal systems along the Zero Meridian and across the Drake Passage. There was a strong gradient in surface zinc concentrations observed across the Antarctic Polar Front along both transects and high zinc levels were found in surface waters throughout the Southern Ocean. Vertical profiles for dissolved Zinc showed the presence of local minima and maxima in the upper 200 m consistent with significant uptake by phytoplankton and release by zooplankton grazing, respectively. Highest deep water zinc concentrations were found in the centre of the Weddell Gyre associated with Central Intermediate Water (CIW), a water mass which is depleted in O2, elevated in CO2 and is regionally a CFC minimum. Our data suggests that the remineralization of sinking particles is a key control on the distribution of Zn in the Southern Ocean. Disappearance ratios of zinc to phosphate (Zn:P) in the upper water column increased southwards along both transects and based on laboratory studies they suggest slower growth rates of phytoplankton due to iron or light limitation. Zinc and silicate were strongly correlated throughout the study region but the disappearance ratio (Zn:Si) was relatively uniform overall except for the region close to the ice edge on the Zero Meridian.

Efecto de la fuente y nivel de zinc en el comportamiento productivo de machos no castrados (40-110 kg) y su relación con el comportamiento sexual

El uso de fuentes de Zn (orgánicas e inorgánicas) en el pienso de cerdos prepúberes se ha mostrado indispensable, ya que este mineral ha evidenciado beneficios relacionados con aspectos reproductivos, respuesta inmunitaria, estado de salud, ganancia de peso, consumo de pienso. Los primeros estudios que identificaron al Zn como componente fundamental en la reproducción fueron en la década de los 40´s, en donde se estableció la importancia de este mineral en el desarrollo de las células de Leydig, a partir de estos descubrimientos se recomienda la utilización del mineral en el pienso de los cerdos. Sin embargo, las recomendaciones que se han hecho para apoyar el efecto del Zn en la reproducción, fueron identificadas hace 30 años, y poco se ha estudiado desde entonces con respecto al nivel de Zn que habría que incluir en el pienso. Por otra parte, la industria alimenticia animal ha desarrollado fuentes minerales con mayor biodisponibilidad, por un lado para que el organismo pueda utilizarlo más rápida y eficientemente (>biodisponibilidad) y por otra parte para evitar que el mineral consumido por el animal, se pierda a través de las deyecciones, asegurando con ello no solo la reducción de las pérdidas económicas, sino la minimización del impacto ambiental que el Zn ejerce negativamente. De esta manera, se decidió realizar una investigación que proporcionara información sobre el efecto de las fuentes y niveles de Zn, en la eficiencia de crecimiento y desarrollo de cerdos prepúberes y verracos jóvenes, en el desarrollo de los testículos y sus estructuras celulares, así como en el comportamiento sexual de los verracos jóvenes. Para lo anterior se utilizaron 50 cerdos de la línea genética York x Landrace, con un peso medio inicial de 35±1.25, estos animales se distribuyeron en siete tratamientos, los cuales correspondieron a dietas formuladas con y sin la adición de fuente de Zn (ZnSO4, ZnO, ZnMet) , y a dos niveles (150ppm y 200ppm de Zn). La dieta base fue formulada utilizando la tabla de necesidades nutritivas del FEDNA (2006). Todos los cerdos fueron colocados en jaulas individuales, con comedero y bebedero individual. Se les dio un periodo de adaptación de 15 días, posteriormente se inició la fase experimental en la que se midió el consumo de pienso (CDP), conversión alimenticia (CA), ganancia de peso (GDP), al finalizar el periodo de crianza (Crecimiento, Desarrollo y Finalización) y los cerdos llegaron a un peso mayor a 100Kg, se sacrificaron tres cerdos, de los cuales se obtuvieron los testículos, epidídimos, bazo, páncreas, hueso (fémur), hígado y riñones, para analizar a través de Espectrofotometría de Absorción Atómica la concentración de Zn...

Étude du rôle potentiel de l'endopeptidase neutre dans la maladie d'Alzheimer et caractérisation de NL1, une nouvelle métallopeptidase à zinc chez les souris

Thèse numérisée par la Direction des bibliothèques de l'Université de Montréal.

Identification de la sumoylation de ZNF74 et de l'interaction de cette protéine à multidoigt de zinc avec UBC9 et PIAS1

Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.

Evolution of C2H2-Zinc finger genes in mammalian genomes

Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.

Zinc regeneration in rechargeable zinc-air fuel cells:a review

Zinc-air fuel cells (ZAFCs) present a promising energy source with a competing potential with the lithium-ion battery and even with proton-exchange membrane fuel cells (PEMFCs) for applications in next generation electrified transport and energy storage. The regeneration of zinc is essential for developing the next-generation, i.e., electrochemically rechargeable ZAFCs. This review aims to provide a comprehensive view on both theoretical and industrial platforms already built hitherto, with focus on electrode materials, electrode and electrolyte additives, solution chemistry, zinc deposition reaction mechanisms and kinetics, and electrochemical zinc regeneration systems. The related technological challenges and their possible solutions are described and discussed. A summary of important R&D patents published within the recent 10 years is also presented.

Lattice Engineering of III-Nitride Heterostructures and Their Applications

III-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents research on lattice engineering of III-Nitride materials, and the structural, optical, and electrical properties of its alloys, in order to approach the ideal material for various applications. We demonstrated the non-destructive and quantitative characterization of composition modulated nanostructure in InAlN thin films with X-ray diffraction. We found the development of the nanostructure depends on growth temperature, and the composition modulation has impacts on carrier recombination dynamics. We also showed that the controlled relaxation of a very thin AlN buffer (20 ~ 30 nm) or a graded composition InGaN buffer can significantly reduce the defect density of a subsequent epitaxial layer. Finally, we synthesized an InAlGaN thin films and a multi-quantum-well structure. Significant emission enhancement in the UVB range (280 – 320 nm) was observed compared to AlGaN thin films. The nature of the enhancement was investigated experimentally and numerically, suggesting carrier confinement in the In localization centers.