Alvará com força de Lei, pelo qual Vossa Alteza Real ha por bem dar o Regimento para regulação, e governo da relação, que foi servido mandar crear na cidade de S. Luiz do Maranhão ; tudo na fórma acima declarada : para Vossa Alteza Real ver

Referência: Bibliografia da Impressão Regia do Rio de Janeiro / Ana Maria de Almeida Camargo, Rubens Borba de Moraes, 1993. v. 2, p. 68.

Supplemento a collecção de legislação portugueza do desembargador Antonio Delgado da Silva /pelo mesmo

Referencia : Diccionario Bibliographico Portuguez / Innocencio Francisco da Silva, 1858. v. 1 p. 122.

Alvará, porque Vossa Alteza Real ha por bem crear hum Erario, e Conselho de Fazenda para a administração, arrecadação, distribuição, contabilidade, e assentamento do seu Real patrimonio, e fundos públicos deste Estado, e Domínios Ultramarinos, como nelle se declara : para Vossa Alteza Real ver

Ao alto do título : D. Fernando José de Portugal.

Alvará, pelo qual Vossa Alteza Real ha por bem crear huma Contadoria da Marinha, na fórma acima declarada : para Vossa Alteza Real ver

Ao alto do título: Visconde de Anadia.

Annaes do Parlamento Brazileiro. Tomo II [1878]

Anais do Parlamento Brasileiro, 1878.

Investigations of noise and of quantum interference in proximity effect bridges

This work reports investigations upon weakly superconducting proximity effect bridges. These bridges, which exhibit the Josephson effects, are produced by bisecting a superconductor with a short (<1µ) region of material whose superconducting transition temperature is below that of the adjacent superconductors. These bridges are fabricated from layered refractory metal thin films whose transition temperature will depend upon the thickness ratio of the materials involved. The thickness ratio is changed in the area of the bridge to lower its transition temperature. This is done through novel photolithographic techniques described in the text, Chapter 2.

If two such proximity effect bridges are connected in parallel, they form a quantum interferometer. The maximum zero voltage current through this circuit is periodically modulated by the magnetic flux through the circuit. At a constant bias current, the modulation of the critical current produces a modulation in the dc voltage across the bridge. This change in dc voltage has been found to be the result of a change in the internal dissipation in the device. A simple model using lumped circuit theory and treating the bridges as quantum oscillators of frequency ω = 2eV/h, where V is the time average voltage across the device, has been found to adequately describe the observed voltage modulation.

The quantum interferometers have been converted to a galvanometer through the inclusion of an integral thin film current path which couples magnetic flux through the interferometer. Thus a change in signal current produces a change in the voltage across the interferometer at a constant bias current. This work is described in Chapter 3 of the text.

The sensitivity of any device incorporating proximity effect bridges will ultimately be determined by the fluctuations in their electrical parameters. He have measured the spectral power density of the voltage fluctuations in proximity effect bridges using a room temperature electronics and a liquid helium temperature transformer to match the very low (~ 0.1 Ω) impedances characteristic of these devices.

We find the voltage noise to agree quite well with that predicted by phonon noise in the normal conduction through the bridge plus a contribution from the superconducting pair current through the bridge which is proportional to the ratios of this current to the time average voltage across the bridge. The total voltage fluctuations are given by <V^2(f ) > = 4kTR^2_d I/V where R_d is the dynamic resistance, I the total current, and V the voltage across the bridge . An additional noise source appears with a strong 1/f^(n) dependence , 1.5 < n < 2, if the bridges are fabricated upon a glass substrate. This excess noise, attributed to thermodynamic temperature fluctuations in the volume of the bridge, increases dramatically on a glass substrate due to the greatly diminished thermal diffusivity of the glass as compared to sapphire.

基于光纤环形镜的偏振无关的掺镧锆钛酸铅电光开关

利用掺镧锆钛酸铅（PLZT）陶瓷二次电光效应结合光纤环形镜结构的优势构成偏振无关高速电光开关。采用琼斯矩阵方法分析了光纤环形镜的输出特性，给出了开关消光比同器件结构参量之间的关系。测量掺镧锆钛酸铅电光开关具有输入偏振无关特性，光开关消光比达到25dB，响应时间小于3μs。此外利用此开关装置测量获得了实验用掺镧锆钛酸铅陶瓷的克尔系数为k～1．1×10^-16m^2／V^2。理论分析和实验结果表明，利用环形镜结构稳定优势和掺镧锆钛酸铅优良的电光特性结合设计的高速光开关具有良好的应前景。本工作对掺镧锆钛酸铅电光

Estrategias para una VENTANA eficaz: Forma geométrica del HUECO - Diseño de la VENTANA-UH

V.1. 219 p.; V. 2. 589 p.