Metrologia de instrumentos endodônticos por microscopia eletrônica de varredura e análise digital de imagens: uma proposta metodológica

A padronização para a fabricação de instrumentos endodônticos em aço inoxidável contribuiu para o desenvolvimento de novos aspectos geométricos. Surgiram propostas de alterações no desenho da haste helicoidal, da seção reta transversal, da ponta, da conicidade e do diâmetro na extremidade (D0). Concomitantemente, o emprego de ligas em Níquel-Titânio possibilitou a produção de instrumentos acionados a motor, largamente empregados hoje. A cada ano a indústria lança instrumentos com diversas modificações, sem, contudo, disponibilizar informações suficientes quanto às implicações clínicas destas modificações. Existe um crescente interesse no estudo dos diferentes aspectos geométricos e sua precisa metrologia. Tradicionalmente, a aferição de aspectos geométricos de instrumentos endodônticos é realizada visualmente através de microscopia ótica. Entretanto, esse procedimento visual é lento e subjetivo. Este trabalho propõe um novo método para a metrologia de instrumentos endodônticos baseado no microscópio eletrônico de varredura e na análise digital das imagens. A profundidade de campo do MEV permite obter a imagem de todo o relevo do instrumento endodôntico a uma distância de trabalho constante. Além disso, as imagens obtidas pelo detector de elétrons retro-espalhados possuem menos artefatos e sombras, tornando a obtenção e análise das imagens mais fáceis. Adicionalmente a análise das imagens permite formas de mensuração mais eficientes, com maior velocidade e qualidade. Um porta-amostras específico foi adaptado para obtenção das imagens dos instrumentos endodônticos. Ele é composto de um conector elétrico múltiplo com terminais parafusados de 12 pólos com 4 mm de diâmetro, numa base de alumínio coberta por discos de ouro. Os nichos do conector (terminais fêmeas) têm diâmetro apropriado (2,5 mm) para o encaixe dos instrumentos endodônticos. Outrossim, o posicionamento ordenado dos referidos instrumentos no conector elétrico permite a aquisição automatizada das imagens no MEV. Os alvos de ouro produzem, nas imagens de elétrons retro-espalhados, melhor contraste de número atômico entre o fundo em ouro e os instrumentos. No porta-amostras desenvolvido, os discos que compõem o fundo em ouro são na verdade, alvos do aparelho metalizador, comumente encontrados em laboratórios de MEV. Para cada instrumento, imagens de quatro a seis campos adjacentes de 100X de aumento são automaticamente obtidas para cobrir todo o comprimento do instrumento com a magnificação e resolução requeridas (3,12 m/pixel). As imagens obtidas são processadas e analisadas pelos programas Axiovision e KS400. Primeiro elas são dispostas num campo único estendido de cada instrumento por um procedimento de alinhamento semi-automático baseado na inter-relação com o Axiovision. Então a imagem de cada instrumento passa por uma rotina automatizada de análise de imagens no KS400. A rotina segue uma sequência padrão: pré-processamento, segmentação, pós-processamento e mensuração dos aspectos geométricos.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

A Continuum Model for Slip-Twinning Interactions in Magnesium and Magnesium Alloys

Due to their high specific strength and low density, magnesium and magnesium-based alloys have gained great technological importance in recent years. However, their underlying hexagonal crystal structure furnishes Mg and its alloys with a complex mechanical behavior because of their comparably smaller number of energetically favorable slip systems. Besides the commonly studied slip mechanism, another way to accomplish general deformation is through the additional mechanism of deformation-induced twinning. The main aim of this thesis research is to develop an efficient continuum model to understand and ultimately predict the material response resulting from the interaction between these two mechanisms.

The constitutive model we present is based on variational constitutive updates of plastic slips and twin volume fractions and accounts for the related lattice reorientation mechanisms. The model is applied to single- and polycrystalline pure magnesium. We outline the finite-deformation plasticity model combining basal, pyramidal, and prismatic dislocation activity as well as a convexification based approach for deformation twinning. A comparison with experimental data from single-crystal tension-compression experiments validates the model and serves for parameter identification. The extension to polycrystals via both Taylor-type modeling and finite element simulations shows a characteristic stress-strain response that agrees well with experimental observations for polycrystalline magnesium. The presented continuum model does not aim to represent the full details of individual twin-dislocation interactions, yet it is sufficiently efficient to allow for finite element simulations while qualitatively capturing the underlying microstructural deformation mechanisms.

Lattice anomalies and magnetic states in Fe_5Si_3-Mn_5Si_3 alloys

The lattice anomalies and magnetic states in the (Fe_100-xMn_x)₅Si₃ alloys have been investigated. Contrary to what was previously reported, results of x-ray diffraction show a second phase (α') present in Fe-rich alloys and therefore strictly speaking a complete solid solution does not exist. Mössbauer spectra, measured as a function of composition and temperature, indicate the presence of two inequivalent sites, namely 6(g) site (designated as site I) and 4(d) (site II). A two-site model (TSM) has been introduced to interpret the experimental findings. The compositional variation of lattice parameters a and c, determined from the x-ray analysis, exhibits anomalies at x = 22.5 and x = 50, respectively. The former can be attributed to the effect of a ferromagnetic transition; while the latter is due to the effect of preferential substitution between Fe and Mn atoms according to TSM.

The reduced magnetization of these alloys deduced from magnetic hyperfine splittings has been correlated with the magnetic transition temperatures in terms of the molecular field theory. It has been found from both the Mössbauer effect and magnetization measurements that for composition 0 ≤ x ˂ 50 both sites I and II are ferromagnetic at liquid-nitrogen temperature and possess moments parallel to each other. In the composition range 50 ˂ x ≤ 100 , the site II is antiferromagnetic whereas site I is paramagnetic even at a temperature below the bulk Néel temperatures. In the vicinity of x = 50 however, site II is in a state of transition between ferromagnetism and antiferromagnetism. The present study also suggests that only Mn in site II are responsible for the antiferromagnetism in Mn₅Si₃ contrary to a previous report.

Electrical resistance has also been measured as a function of temperature and composition. The resistive anomalies observed in the Mn-rich alloys are believed to result from the effect of the antiferromagnetic Brillouin zone on the mobility of conduction electrons.

Modified porous silica antireflective coatings with laser damage resistance for Ti:sapphire

Porous SiO2 antireflective (AR) coatings are prepared from the colloidal silica solution modified with methyltriethoxysilane (MTES) based on the sol-gel route. The viscosity of modified silica suspensions changes but their stability keeps when MTES is introduced. The refractive indices of modified coatings vary little after bake treatment from 100 to 150 Celsius. The modified silica coatings on Ti:sapphire crystal, owning good homogeneity, display prominent antireflective effect within the laser output waveband (750-850 nm) of Ti:sapphire lasers, with average transmission above 98.6%, and own laser induced damage thresholds (LIDTs) of more than 2.2 J/cm2 at 800 nm with the pulse duration of 300 ps.

NANOPARTICLE REINFORCEMENT OF FERROUS ALLOYS: WETTABILITY AND MECHANICAL PROPERTIES

El refuerzo de matrices férricascon una fina dispersión de partículas nanométricas permite mejorar la dureza, resistencia mecánica e incluso permitiría mejorar la tenacidad del material al afinar el tamaño de grano.

All solid-state, injection-seeded Ti:sapphire ring laser

In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported. It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

Experimental study of Ti : sapphire laser end-pumped Nd : YAG ceramic laser Q-switched by Cr4+: YAG saturable absorber

By employing a continuous-wave (CW) Ti:sapphire tunable laser as a pumping source and a Cr4+:YAG single crystal as the saturable absorber (SA), a passively Q-switched Nd:YAG ceramic laser has been demonstrated at room temperature. With an absorbed pumping power of 541 mW at 808 nm, an average output power of 61 mW at 1064 nm has been obtained with 3.5 mu J pulse energy, 15 ns pulse width and 18.18 kHz repetition rate, and the corresponding slope-efficiency is 15%. The relationships between the pulse width, repetition rate, average output power, pulse energy, and peak power on the absorbed pumping power for different initial transmission of the Cr4+:YAG SA are discussed separately. The Nd:YAG ceramic is one of the most promising laser materials for compact, efficient, all-solid-state pulsed lasers.

P2O5-B2O3-R2O-MO-Al2O3系统玻璃物化性质的研究

以Yb^3+-Er^3+共掺的P2O5-B2O3-R2O-MO-Al2O3(R=Li，Na，K；M=Zn，Ca，Sr，Ba)系统玻璃为研究对象，分别分析了改变B2O3，的含量，以及加入不同种类的碱金属和碱土金属氧化物对玻璃的物理化学性质的影响。研究结果表明，当B2O3的含量增加，玻璃的Tg，Tf上升，热膨胀系数下降；随着修饰体阳离子半径减小，玻璃的溶解速率下降，化学稳定性变好。