Factores ambientales que afectan la germinación de Dipsacus fullonum L; evaluación de temperatura, stress salino y osmótico

Resumen: Dipsacus fullonum es una especie conocida vulgarmente como carda, carda silvestre o cardencha, perteneciente a la familia Dipsacaceae. Es una maleza muy invasora que crece en sitios abiertos y resiste condiciones de sequía, inundación y salinidad. Conocer la tolerancia de esta especie a estos factores permitiría conocer su potencial área de infestación. Al presente esta información es escasa en la Argentina. Por otro lado, tampoco se dispone de información acerca del valor de sus temperaturas cardinales ni de la tolerancia al estrés salino u osmótico. Por ello, dentro de este marco teórico se evaluaron: i) el potencial agua base de germinación (ψb (50)) aplicando el modelo del hidrotiempo y ii) las temperaturas cardinales y iii) el tiempo térmico a germinación (TT). Para la obtención de estos parámetros se condujeron diferentes ensayos de germinación a las siguientes temperaturas: 5°C; 10°C; 15°C; 20°C; 25°C; 30°C y 35°C. Se calculó el porcentaje de semillas germinadas y el tiempo medio a germinación para todos los tratamientos térmicos. Fue observado que a medida que la temperatura aumentó, disminuía el tiempo medio a germinación (T50) y sólo en dos temperaturas estudiadas el porcentaje final no llegó al 100% (i.e. 5°C y 30°C) y a 35°C no se observó germinación. La temperatura base fue de 4,94ºC, la óptima fue 25,46ºC y la crítica fue 38,90ºC. El tiempo térmico para la etapa de germinación fue de 39,06ºCd. En los ensayos de stress osmótico y salino, se observó que a medida que las semillas fueron incubadas a potenciales más negativos el porcentaje de germinación final no varió excepto en los potenciales muy negativos (- 1 MPa en NaCl y -0,75MPa en PEG). En cambio, se observó un retraso en el inicio de la germinación. Estos resultados proponen que en coincidencia con sus características morfológicas, su hábito de crecimiento, su fácil dispersión y el amplio rango de condiciones ambientales donde la germinación alcanza elevados porcentajes permiten proponer que D. fullonum sea reportada en nuevas zonas.

Stress intensity factors for functionally graded solid cylinders

This paper presents the mode I stress intensity factors for functionally graded solid cylinders with an embedded penny-shaped crack or an external circumferential crack. The solid cylinders are assumed under remote uniform tension. The multiple isoparametric finite element method is used. Various types of functionally graded materials and different gradient compositions for each type are investigated. The results show that the material property distribution has a quite considerable in influence on the stress intensity factors. The influence for embedded cracks is quite different from that for external cracks.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

An in vitro transposon system for highly regulated gene expression: construction of Escherichia coli strains with arabinose-dependent growth at low temperatures.

Placing a gene of interest under the control of an inducible promoter greatly aids the purification, localization and functional analysis of proteins but usually requires the sub-cloning of the gene of interest into an appropriate expression vector. Here, we describe an alternative approach employing in vitro transposition of Tn Omega P(BAD) to place the highly regulable, arabinose inducible P(BAD) promoter upstream of the gene to be expressed. The method is rapid, simple and facilitates the optimization of expression by producing constructs with variable distances between the P(BAD) promoter and the gene. To illustrate the use of this approach, we describe the construction of a strain of Escherichia coli in which growth at low temperatures on solid media is dependent on threshold levels of arabinose. Other uses of the transposable promoter are also discussed.

Closed form solutions of T-stress in plane elasticity crack problems

The T-stress is considered as an important parameter in linear elastic fracture mechanics. In this paper, several closed form solutions of T-stress in plane elasticity crack problems in an infinite plate are investigated using the complex potential theory. In the line crack case, if the applied loading is the remote stress or the concentrated forces, the T-stress can be derived from the basic field. Here, the basic field is defined as the field caused by the applied loading in the infinite plate without the crack. For the circular are crack, the T-stress can be abstracted from a known solution. For the cusp crack problems, the T-stress can be separated from the obtained stress solution for which the conformal mapping technique is used.

Singularity of Stress Field Around Interface Crack Between Viscoelastic Bodies

研究两半无限大黏弹性体间Griffith界面裂纹在简谐载荷作用下裂纹尖端动应力场的奇异特性.通过引入裂纹张开位移和裂纹位错密度函数,相应的混合边值问题归结为一组耦合的奇异积分方程.渐近分析表明裂尖动应力场的奇异特征完全包含在奇异积分方程的基本解中.通过对基本解的深入分析发现黏弹性材料界面裂纹裂尖动应力场具有与材料参数和外载荷频率相关的振荡奇异特性.以标准线性固体黏弹材料为例讨论了材料参数和载荷频率对奇性指数和振荡指数的影响.

Effective Stress and Liquefaction of Seabed Under the Action of Standing Waves

波浪作用下海床的稳定性与液化分析是海底管线、防波堤和海洋平台设计中必须仔细考虑的问题。推荐了一个循环载荷作用下土体的弹塑性实用本构模型,并给出了一种粉土的模型参数,该模型直接根据初始应力状态和循环应力的大小与作用时间计算土体的塑性应变增量,在有限元计算中不需要引入弹塑性矩阵。采用Biot理论和有限单元法,对海床有效应力的变化过程分析表明,波腹点下海床存在较大的液化可能性。波浪作用对海床存在一定的压密作用。

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

The investigation on dynamic fracture behavour of materials under compressive-shear combined stress waves

In this paper, an improved plate impact experimental technique is presented for studying dynamic fracture mechanism of materials, under the conditions that the impacting loading is provided by a single pulse and the loading time is in the sub-microsecond range. The impacting tests are carried out on the pressure-shear gas gun. The loading rate achieved is dK/dt similar to 10(8) MPa m(1/2) s(-1). With the elimination of influence of the specimen boundary, the plane strain state of a semi-infinite crack in an infinite elastic plate is used to simulate the deformation fields of crack tip. The single pulses are obtained by using the "momentum trap" technique. Therefore, the one-time actions of the single pulse are achieved by eradicating the stress waves reflected from the specimen boundary or diffracted from the crack surfaces. In the current study, some important phenomena have been observed. The special loading of the single pulse can bring about material damage around crack tip, and affect the material behavior, such as kinking and branching of the crack propagation. Failure mode transitions from mode I to mode II crack are observed under asymmetrical impact conditions. The mechanisms of the dynamic crack propagation are consistent with the damage failure model.

Stress state in front of a crack perpendicular to bimaterial interface

Using a dislocation simulation approach, the basic equation for a crack perpendicular to a bimaterial interface is formulated in this paper. A novel expansion method is proposed for solving the problem. The complete solution for the problem, including the T stress ahead of the crack tip and the stress intensity factors are presented. The stress field characteristics are analyzed in detail. It is found that ahead of the crack tip and near the interface the normal stress, perpendicular to the crack plane, sigma(x), is characterized by the K fields and the normal stress sigma(y) is dominated by the K field plus T stress in the region of 0 < r/b < 0.4 for b/a(0) less than or equal to 0.1, where b is the distance from the crack tip to the interface.

Surface Stress Induced By Adatoms Adsorption On Solid Surfaces

Based on the statistical thermodynamics theory, a theoretical model of adsorbate induced surface stress of adatoms adsorption on solid surface is presented. For the low coverage, the interaction between the adsorbed molecules is entirely negligible and the adsorption induced surface stress is found to be the function of the coverage and the adsorption energy change with strain. For the high coverage, the adsorbate-adsorbate interaction contributes to the adsorption-induced surface stress effectively. In the case of carbon adsorption on the Ni(100) surface, the value of 0.5 is obtained as a characteristic coverage to decide whether to take the interaction between the adsorabtes into consideration and the results also show that the adsorption induces a compressive surface stress.

Residual Stress And Deformation Analysis Of Anodic Bonded Multi-Layer Of Glass And Aluminum

The bonding of glass wafer to aluminum foils in multi-layer assemblies was made by the common anodic bonding process. The bonding was performed at temperatures in the range 350-450 degrees C and with an applied voltage in the range 400-700 V under a pressure of 0.05 MPa. Residual stress and deformation in samples of two-layer (aluminum/glass) and three-layer (glass/aluminum/glass) were analyzed by nonlinear finite element simulation software MARC. The stress and strain varying with cooling time were obtained. The analyzed results show that deformation of the three-layer sample is significantly smaller than that of the two-layer sample, because of the symmetric structure of the three-layer sample. This has an important advantage in MEMS fabrication. The maximum equivalent stresses locate in the transition layer in both samples, which will become weakness in bonded sample.

Derivation Of A Nonlinear Reynolds Stress Model Using Renormalization Group Analysis And Two-Scale Expansion Technique

Adopting Yoshizawa's two-scale expansion technique, the fluctuating field is expanded around the isotropic field. The renormalization group method is applied for calculating the covariance of the fluctuating field at the lower order expansion. A nonlinear Reynolds stress model is derived and the turbulent constants inside are evaluated analytically. Compared with the two-scale direct interaction approximation analysis for turbulent shear flows proposed by Yoshizawa, the calculation is much more simple. The analytical model presented here is close to the Speziale model, which is widely applied in the numerical simulations for the complex turbulent flows.

Interface Layer Effect On The Stress Distribution Of A Wafer-Bonded Bilayer Structure

The interface layer plays an important role in stress transfer in composite structures. However, many interface layer properties such as the modulus, thickness, and uniformity are difficult to determine. The model developed in this article links the influence of the interface layer on the normal stress distribution along the layer thickness with the layer surface morphology before bonding. By doing so, a new method of determining the interfacial parameter(s) is suggested. The effects of the layer thickness and the surface roughness before bonding on the normal stress distribution and its depth profile are also discussed. For ideal interface case with no interfacial shear stress, the normal stress distribution pattern can only be monotonically decreased from the interface. Due to the presence of interfacial shear stress, the normal stress distribution is much more complex, and varies dramatically with changes in the properties of the interface layer, or the dimensions of the bonding layers. The consequence of this dramatic stress field change, such as the shift of the maximum stress from the interface is also addressed. The size-dependent stress distribution in the thickness direction due to the interface layer effect is presented. When the interfacial shear stress is reduced to zero, the model presented in this article is also demonstrated to have the same normal stress distribution as obtained by the previous model, which does not consider the interface layer effect.

Stress intensity factor histories of a steadily propagating crack under 3-D combined mode traction

Elastodynamic stress intensity factor histories of an unbounded solid containing a semi-infinite plane crack that propagates at a constant velocity under 3-D time-independent combined mode loading are considered. The fundamental solution, which is the response of point loading, is obtained. Then, stress intensity factor histories of a general loading system are written out in terms of superposition integrals. The methods used here are the Laplace transform methods in conjunction with the Wiener-Hopf technique.