Development and characterization of an FK photovoltaic concentrator for maximum conversion efficiency

The outdoor measurements of a single-cell concentrator PV module reaching a regressed 35.6% efficiency and a maximum peak efficiency of 36.0% (both corrected @Tcell=25ºC) are presented. This is the result of the joint effort by LPI and Solar Junction to demonstrate the potential of combining their respective state-of-the-art concentrator optics and solar cells. The LPI concentrator used is an FK, which is an advanced nonimaging concentrator using 4-channel Köhler homogenization, with a primary Fresnel lens and a refractive secondary made of glass. Solar Junction’s cell is a triplejunction solar cell with the A-SLAMTM architecture using dilute-nitrides.

Realistic detailed balance study of the quantum efficiency of quantum dot solar cells

An attractive but challenging technology for high efficiency solar energy conversion is the intermediate band solar cell (IBSC), whose theoretical efficiency limit is 63%, yet which has so far failed to yield high efficiencies in practice. The most advanced IBSC technology is that based on quantum dots (QDs): the QD-IBSC. In this paper, k·p calculations of photon absorption in the QDs are combined with a multi-level detailed balance model. The model has been used to reproduce the measured quantum efficiency of a real QD-IBSC and its temperature dependence. This allows the analysis of individual sub-bandgap transition currents, which has as yet not been possible experimentally, yielding a deeper understanding of the failure of current QD-IBSCs. Based on the agreement with experimental data, the model is believed to be realistic enough to evaluate future QD-IBSC proposals.

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

Effects of internal luminescence and internal optics on V-oc and J(sc) of III-V solar cells

For solar cells dominated by radiative recombination, the performance can be significantly enhanced by improving the internal optics. Internally radiated photons can be directly emitted from the cell, but if confined by good internal reflectors at the front and back of the cell they can also be re-absorbed with a significant probability. This so-called photon recycling leads to an increase in the equilibrium minority carrier concentration and therefore the open-circuit voltage, Voc. In multijunction cells, the internal luminescence from a particular junction can also be coupled into a lower bandgap junction where it generates photocurrent in addition to the externally generated photocurrent, and affects the overall performance of the tandem. We demonstrate and discuss the implications of a detailed model that we have developed for real, non-idealized solar cells that calculates the external luminescent efficiency, accounting for wavelength-dependent optical properties in each layer, parasitic optical and electrical losses, multiple reflections within the cell and isotropic internal emission. The calculation leads to Voc, and we show data on high quality GaAs cells that agree with the trends in the model as the optics are systematically varied. For multijunction cells the calculation also leads to the luminescent coupling efficiency, and we show data on GaInP/GaAs tandems where the trends also agree as the coupling is systematically varied. In both cases, the effects of the optics are most prominent in cells with good material quality. The model is applicable to any solar cell for which the optical properties of each layer are well-characterized, and can be used to explore a wide phase space of design for single junction and multijunction solar cells.

In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

Experimental and modeling analysis of internal luminescence in III-V solar cells

In high quality solar cells, the internal luminescence can be harnessed to enhance the overall performance. Internal confinement of the photons can lead to an increased open-circuit voltage and short-circuit current. Alternatively, in multijunction solar cells the photons can be coupled from a higher bandgap junction to a lower bandgap junction for enhanced performance. We model the solar cell as an optical cavity and compare calculated performance characteristics with measurements. We also describe how very high luminescent coupling alleviates the need for top-cell thinning to achieve current-matching.

Electrochemical potentials (Quasi-Fermi Levels) and the operation of hot-carrier, impact-ionization, and intermediate-band solar cells

In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.

Evaluation of the reliability of high concentrator GaAs solar cells by means of temperature accelerated aging tests

ABSTRACT Evaluating the reliability, warranty period, and power degradation of high concentration solar cells is crucial to introducing this new technology to the market. The reliability of high concentration GaAs solar cells, as measured in temperature accelerated life tests, is described in this paper. GaAs cells were tested under high thermal accelerated conditions that emulated operation under 700 or 1050 suns over a period exceeding 10 000 h. Progressive power degradation was observed, although no catastrophic failures occurred. An Arrhenius activation energy of 1.02 eV was determined from these tests. The solar cell reliability [R(t)] under working conditions of 65°C was evaluated for different failure limits (1–10% power loss). From this reliability function, the mean time to failure and the warranty time were evaluated. Solar cell temperature appeared to be the primary determinant of reliability and warranty period, with concentration being the secondary determinant. A 30-year warranty for these 1 mm2-sized GaAs cells (manufactured according to a light emitting diode-like approach) may be offered for both cell concentrations (700 and 1050 suns) if the solar cell is operated at a working temperature of 65°C.

Explicit Expressions for Solar Panel Equivalent Circuit Parameters Based on Analytical Formulation and the Lambert W-Function

Due to the high dependence of photovoltaic energy efficiency on environmental conditions (temperature, irradiation...), it is quite important to perform some analysis focusing on the characteristics of photovoltaic devices in order to optimize energy production, even for small-scale users. The use of equivalent circuits is the preferred option to analyze solar cells/panels performance. However, the aforementioned small-scale users rarely have the equipment or expertise to perform large testing/calculation campaigns, the only information available for them being the manufacturer datasheet. The solution to this problem is the development of new and simple methods to define equivalent circuits able to reproduce the behavior of the panel for any working condition, from a very small amount of information. In the present work a direct and completely explicit method to extract solar cell parameters from the manufacturer datasheet is presented and tested. This method is based on analytical formulation which includes the use of the Lambert W-function to turn the series resistor equation explicit. The presented method is used to analyze commercial solar panel performance (i.e., the current-voltage–I-V–curve) at different levels of irradiation and temperature. The analysis performed is based only on the information included in the manufacturer’s datasheet.

Explicit expressions for solar panel equivalent circuit parameters based on analytical formulation and the Lambert W - Function

Due to the high dependence of photovoltaic energy efficiency on environmental conditions (temperature, irradiation...), it is quite important to perform some analysis focusing on the characteristics of photovoltaic devices in order to optimize energy production, even for small-scale users. The use of equivalent circuits is the preferred option to analyze solar cells/panels performance. However, the aforementioned small-scale users rarely have the equipment or expertise to perform large testing/calculation campaigns, the only information available for them being the manufacturer datasheet. The solution to this problem is the development of new and simple methods to define equivalent circuits able to reproduce the behavior of the panel for any working condition, from a very small amount of information. In the present work a direct and completely explicit method to extract solar cell parameters from the manufacturer datasheet is presented and tested. This method is based on analytical formulation which includes the use of the Lambert W-function to turn the series resistor equation explicit. The presented method is used to analyze the performance (i.e., the I - V curve) of a commercial solar panel at different levels of irradiation and temperature. The analysis performed is based only on the information included in the manufacturer's datasheet.

Case study in failure analysis of accelerated life tests (ALT) on III-V commercial triple-junction concentrator solar cells

In this work the failure analysis carried out in III-V concentrator multijunction solar cells after a temperature accelerated life test is presented. All the failures appeared have been catastrophic since all the solar cells turned into low shunt resistances. A case study in failure analysis based on characterization by optical microscope, SEM, EDX, EQE and XPS is presented in this paper, revealing metal deterioration in the bus bar and fingers as well as cracks in the semiconductor structure beneath or next to the bus bar. In fact, in regions far from the bus bar the semiconductor structure seems not to be damaged. SEM images have dismissed the presence of metal spikes inside the solar cell structure. Therefore, we think that for these particular solar cells, failures appear mainly as a consequence of a deficient electrolytic growth of the front metallization which also results in failures in the semiconductor structure close to the bus bars.

Contribution to active multi-beam reconfigurable antennas for L and S bands

La presente tesis doctoral con título "Contribution to Active Multi-Beam Reconfigurable Antennas for L and S Bands" ha sido desarrollada por el investigador ingeniero de telecomunicación estudiante de doctorado Javier García-Gasco Trujillo en el Grupo de Radiación del Departamento de Señales, Sistemas y Radiocomunicaciones de la ETSI de Telecomunicación de la Universidad Politécnica de Madrid bajo la dirección de los doctores Manuel Sierra Pérez y José Manuel Fernández González. Durante décadas, el desarrollo de antenas de apuntamiento electrónico ha estado limitado al área militar. Su alto coste y su gran complejidad eran los mayores obstáculos que frenaban la introducción de esta tecnología en aplicaciones comerciales de gran escala. La reciente aparición de componentes de estado sólido prácticos, fiables, y de bajo coste ha roto la barrera del coste y ha reducido la complejidad, haciendo que las antenas reconfigurables de apuntamiento electrónico sean una opción viable en un futuro cercano. De esta manera, las antenas phased array podrían llegar a ser la joya de la corona que permitan alcanzar los futuros retos presentes en los sistemas de comunicaciones tanto civiles como militares. Así pues, ahora es el momento de investigar en el desarrollo de antenas de apuntamiento electrónico de bajo coste, donde los nuevos componentes de estado sólido comerciales forman el núcleo duro de la arquitectura. De esta forma, el estudio e implementación de estos arrays de antenas activas de apuntamiento electrónico capaces de controlar la fase y amplitud de las distintas señales implicadas es uno de los grandes retos de nuestro tiempo. Esta tesis se enfrenta a este desafío, proponiendo novedosas redes de apuntamiento electrónico e innovadores módulos de transmisión/recepción (T/R) utilizando componentes de estado sólido de bajo coste, que podrán integrar asequibles antenas activas reconfigurables multihaz en bandas L y S. En la primera parte de la tesis se realiza una descripción del estado del arte de las antenas phased array, incluyendo su base teórica y sus ventajas competitivas. Debido a que las contribuciones obtenidas en la presente tesis han sido realizadas dentro de distintos proyectos de investigación, donde se han manejada antenas de simple/doble polarización circular y simple/doble banda de trabajo, se describen detenidamente los dos proyectos más relevantes de la investigación: el radar de basura espacial de la Agencia Espacial Europea (ESA), Space Situational Awareness (SSA); y la estación base de seguimiento y control de satélites de órbita baja, GEOdesic Dome Array (GEODA). Sin lugar a dudas, los dispositivos desfasadores son uno de los componentes clave en el diseño de antenas phased arrays. Recientemente se ha observado una gran variación en el precio final de estos dispositivos, llegando en ocasiones a límites inasequibles. Así pues, se han propuesto distintas técnicas de conformación de haz alternativas a la utilización de componentes desfasadores comerciales: el desfasador de líneas conmutadas, la red de haz conmutado, y una novedosa red desfasadora divisora/combinadora de potencia. Para mostrar un uso práctico de las mismas, se ha propuesto el uso de las tres alternativas para el caso práctico del subarray de cinco elementos de la celda GEODA-SARAS. Tras dicho estudio se obtiene que la novedosa red desfasadora divisora/combinadora de potencia propuesta es la que mejor relación comportamiento/coste presenta. Para verificar su correcto funcionamiento se construye y mide los dos bloques principales de los que está compuesta la red total, comprobando que en efecto la red responde según lo esperado. La estructura más simple que permite realizar un barrido plano es el array triangular de tres elementos. Se ha realizado el diseño de una nueva red multihaz que es capaz de proporcionar tres haces ortogonales en un ángulo de elevación _0 y un haz adicional en la dirección broadside utilizando el mencionado array triangular de tres elementos como antena. En primer lugar se realizar una breve introducción al estado del arte de las redes clásicas multihaz. Así mismo se comentan innovadores diseños de redes multihaz sin pérdidas. El estudio da paso a las redes disipativas, de tal forma que se analiza su base matemática y se muestran distintas aplicaciones en arrays triangulares de tres elementos. Finalmente, la novedosa red básica propuesta se presenta, mostrando simulaciones y medidas de la misma para el caso prácticoo de GEODA. También se ha diseñado, construido y medido una red compuesta por dos redes básicas complementarias capaz de proporcionar seis haces cuasi-ortogonales en una dirección _0 con dos haces superpuestos en broadside. La red propuesta queda totalmente validada con la fabricación y medida de estos con prototipos. Las cadenas de RF de los módulos T/R de la nueva antena GEODA-SARAS no son algo trivial. Con el fin de mostrar el desarrollo de una cadena compleja con una gran densidad de componentes de estado sólido, se presenta una descripción detallada de los distintos componentes que integran las cadenas de RF tanto en transmisión como en recepción de la nueva antena GEODA-SARAS. Tras presentar las especificaciones de la antena GEODA-SARA y su diagrama de bloques esquemático se describen los dos bloques principales de las cadenas de RF: la celda de cinco elementos, y el módulo de conversión de panel. De la misma manera también se presentará el módulo de calibración integrado dentro de los dos bloques principales. Para comprobar que el funcionamiento esperado de la placa es el adecuado, se realizará un análisis que tratará entre otros datos: la potencia máxima en la entrada del transmisor (comprobando la saturación de la cadena), señal de recepción mínima y máxima (verificando el rango de sensibilidad requerido), y el factor G/T (cumpliendo la especificación necesaria). Así mismo se mostrará un breve estudio del efecto de la cuantificación de la fase en el conformado de haz de RF. Los estudios muestran que la composición de las cadenas de RF permite el cumplimiento de las especificaciones necesarias. Finalmente la tesis muestra las conclusiones globales del trabajo realizado y las líneas futuras a seguir para continuar con esta línea de investigación. ABSTRACT This PhD thesis named "Contribution to Active Multi-Beam Reconfigurable Antennas for L and S Bands", has been written by the Electrical Engineer MSc. researcher Javier García-Gasco Trujillo in the Grupo de Radiación of the Departamento de Señales, Sistemas y Radiocomunicaciones from the ETSI de Telecomunicación of the Universidad Politécnica de Madrid. For decades, the implementation of electronically steerable phased array antennas was confined to the military area. Their high cost and complexity were the major obstacles to introduce this technology in large scale commercial applications. The recent emergence of new practical, low-cost, and highly reliable solid state devices; breaks the barrier of cost and reduces the complexity, making active phased arrays a viable future option. Thus, phased array antennas could be the crown jewel that allow to meet the future challenges in military and civilian communication systems. Now is time to deploy low-cost phased array antennas, where newly commercial components form the core of the architecture. Therefore, the study and implementation of these novel low-cost and highly efficient solid state phased array blocks capable of controlling signal phase/amplitude accurately is one of the great challenges of our time. This thesis faces this challenge, proposing innovative electronic beam steering networks and transmitter/ receiver (T/R) modules using affordable solid state components, which could integrate fair reconfigurable phased array antennas working in L and S bands. In the first part of the thesis, a description of the state of art of phased array antennas, including their fundamentals and their competitive advantages, is presented. Since thesis contributions have been carried out for different research projects, where antennas with single/double circular polarization and single/double working frequency bands have been examined, frameworks of the two more important projects are detailed: the Space Situational Awareness (SSA) programme from the European Space Agency (ESA), and the GEOdesic Dome Array (GEODA) project from ISDEFE-INSA and the ESA. Undoubtedly, phase shifter devices are one of the key components of phased array antennas. Recent years have witnessed wide fluctuations in commercial phase shifter prices, which sometimes led to unaffordable limit. Several RF steering technique alternatives to the commercial phase shifters are proposed, summarized, and compared: the switched line phase shifter, the switched-beam network, and the novel phase shifter power splitter/combiner network. In order to show a practical use of the three different techniques, the five element GEODA-SARAS subarray is proposed as a real case of study. Finally, a practical study of a newly phase shifter power splitter/combiner network for a subarray of five radiating elements with triangular distribution is shown. Measurements of the two different phase shifter power splitter/combiner prototypes integrating the whole network are also depicted, demonstrating their proper performance. A triangular cell of three radiating elements is the simplest way to obtain a planar scanner. A new multibeam network configuration that provides three orthogonal beams in a desired _0 elevation angle and an extra one in the broadside steering direction for a triangular array of three radiating elements is introduced. Firstly, a short introduction to the state of art of classical multi-beam networks is presented. Lossless network analysis, including original lossless network designs, are also commented. General dissipative network theory as well as applications for array antennas of three radiating elements are depicted. The proposed final basic multi-beam network are simulated, built and measured to the GEODA cell practical case. A combined network that provides six orthogonal beams in a desired _0 elevation angle and a double seventh one in the broadside direction by using two complementary proposed basic networks will be shown. Measurements of the whole system will be also depicted, verifying the expected behavior. GEODA-SARAS T/R module RF chains are not a trivial design. A thorough description of all the components compounding GEODA-SARAS T/R module RF chains is presented. After presenting the general specifications of the GEODA-SARAS antenna and its block diagrams; two main blocks of the RF chains, the five element cell and the panel conversion module, are depicted and analyzed. Calibration module integrated within the two main blocks are also depicted. Signal flow throw the system analyzing critical situations such as maximum transmitted power (testing the chain unsaturation), minimum and maximum receiving signal (verifying sensitivity range), maximum receiver interference signals (assuring a proper reception), and G/T factor (fulfilling the technical specification) are evaluated. Phase quantization error effects are also listed. Finally, the manuscript contains the conclusions drawn of the present research and the future work.

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

Intermediate band solar cells. The transition metal supersaturated Silicon approach

Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. This paper will deal with one of the ways to generate the IB namely the deep level center approach. We will discuss not only its existence but also the carriers lifetime recovery which is necessary to obtain the expected increase of the solar cell efficiency.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.