The intensity distribution and thermal stability of InnoSlab laser

Partially end-pumped slab laser is an innovative solid state laser, namely InnoSlab. Combining the hybrid resonator with partially end-pumping, the output power can be scaled with high beam quality. In this paper, the output intensity distributions are simulated by coordinate transformation fast Fourier transform (FFT) algorithm, comparing the thermal lens influence. As the simulated curves showed, the output mode is still good when the thermal lens effect is strong, indicating the good thermal stability of InnoSlab laser. Such a new kind of laser can be designed and optimized on the base of this simulation.

Highly efficient Nd:YAG ceramic CW laser with 59.8% slope-efficiency

In this paper, a highly efficient Ti:sapphire end-pumped 1 at.-% Nd:YAG ceramic laser that is comparable in efficiency with Nd:YAG single crystal lasers has been developed. Optical absorption and emission spectra for Nd:YAG ceramics have been measured. With 673-mW pumping, 295-mW laser output at 1064 nm has been obtained. The laser threshold is only 13 mW. Deducted the transmitted light, the corresponding optical-to-optical conversion efficiency is 58.4%. The lasing characteristics of Nd:YAG ceramic are nearly equal to those of Nd:YAG single crystal.

High-power Nd:YAG planar waveguide laser with YAG and Al2O3 claddings

Thermal effects in Nd:YAG planar waveguide lasers with non-symmetrical claddings are discussed. The heat generated in the active core can be removed more efficiently by directly contacting the active core to the heat sink. Several cladding materials are compared to optimize the heat removal. Furthermore, uniform pumping is achieved with oblique edge-pumping technique. Using quasi-CW pumping at 1 KHz repetition rate, an average output power of 280 W with a slope efficiency of 38% is obtained with a positive unstable resonator. (C) 2008 Elsevier B.V. All rights reserved.

Upconversion fluorescence property of Er3+/Yb3+-codoped novel bismuth-germanium glass

Infrared-to-visible upconversion fluorescence property of Er3+/Yb3+ codoped novel bismuth-germanium glass under 975 nm LD excitation has been studied. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546 and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs. The structure of the bismuth-germanium glass has been investigated by peak-deconvolution of FT-Raman spectrum, and the structural information was obtained from the peak wavenumbers. This novel bismuth-germanium glass with low maximum phonon energy (similar to 750 cm(-1)) can be used as potential host material for upconversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Intense upconversion luminescence in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass

Structural and up-conversion fluorescence properties in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass have been studied. The structure of novel bismuth-germanium glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wave numbers. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the up-conversion luminescence. Intense blue and weak red emissions centered at 477 and 650 mn, corresponding to the transitions 1G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. This novel oxychloride bismuth-germanium glass with low maximum phonon energy (similar to 730 cm(-1)) can be used as potential host material for up-conversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Upconversion luminescence from E-2 state of Cr3+ in Al2O3 crystal by infrared femtosecond laser irradiation

Visible upconversion luminescence was observed in Cr3+: Al2O3 crystal under focused femtosecond laser irradiation. The luminescence spectra show that the upconversion luminescence originates from the E-2-(4)A(2) transition of Cr3+. The dependence of the fluorescence intensity of Cr3+ on the pump power reveals that a two-photon absorption process dominates in the conversion of infrared radiation to the visible emission. It is suggested that the simultaneous absorption of two infrared photons produces the population of upper excited states, which leads to the characteristic visible emission from E-2 state of Cr3+.

Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Heterogeneous catalytic activity on Mn, Fe and Co-based metalloporphyrinic Solid Coordination Frameworks (SCFs)

Comunicación al congreso 1st European Conference on Metal Organic Frameworks and Porous Polymers, celebrado en Postdam del 11 al 14 de octubre de 2015

Laser micromachining of chromium-rich die steels under controlled atmospheres

Diode-pumped, solid-state (DPSS) lasers with multiwavelength capability have become an industrial reality in recent years. Multiwavelength capability allows DPSS lasers to perform operations such as micromachining in a variety of engineering materials such as ceramics, metals and polymers. A series of experiments was performed to investigate how shielding gas environments and gas pressure affect the ability to cut and machine chromium-rich die steels. Results from this study reveal that traditional plasma-controlling gases have a detrimental e�ffect on the surface morphology of micromachined components.

Recent developments of the Laser-assisted Cold Spray process and deposit characterisation

Laser-assisted Cold Spray (LCS) is a new coating and fabrication process which combines the supersonic powder beam found in Cold Spray (CS) with laser heating of the deposition zone. LCS retains the advantages of CS; solid-state deposition, high build rate and the ability to deposit onto a range of substrates, while reducing operating costs by removing the need to use gas heating and helium as the process gas. Recent improvements in powder delivery and laser energy coupling to workpiece have been undertaken to improve deposition efficiency (DE) and build rate, while real-time temperature logging allows greater management of deposition conditions and deposit characteristics.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

Ultrashort pulse generation in diode laser devices

The generation of ultrashort optical pulses by semiconductor lasers has been extensively studied for many years. A number of methods, including gain-/Q-switching and different types of mode locking, have been exploited for the generation of picosecond and sub-picosecond pulses [1]. However, the shortest pulses produced by diode lasers are still much longer and weaker than those that are generated by advanced mode-locked solid-state laser systems [2]. On the other hand, an interesting class of devices based on superradiant emission from multiple contact diode laser structures has also been recently reported [3]. Superradiance (SR) is a transient quantum optics phenomenon based on the cooperative radiative recombination of a large number of oscillators, including atoms, molecules, e-h pairs, etc. SR in semiconductors can be used for the study of fundamental properties of e-h ensembles such as photon-mediated pairing, non-equilibrium e-h condensation, BSC-like coherent states and related phenomena. Due to the intrinsic parameters of semiconductor media, SR emission typically results in the generation of a high-power optical pulse or pulse train, where the pulse duration can be much less than 1 ps, under optimised bias conditions. Advantages of this technique over mode locking in semiconductor laser structures include potentially shorter pulsewidths and much larger peak powers. Moreover, the pulse repetition rate of mode-locked pulses is fixed by the cavity round trip time, whereas the repetition rate of SR pulses is controlled by the current bias and can be varied over a wide range. © 2012 IEEE.

Introducing carbon diffusion barriers for uniform, high-quality graphene growth from solid sources.

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.