Heavy mesons and excited baryons /

"AEC Contract AT(04-3)-400."

Relativistic many-body bound systems : electromagnetic properties /

Mode of access: Internet.

Stationary wave theory for relativistic plasma oscillations.

"Supported in part by a National Science Foundation grant for theoretical physics related to I. G. Y."

700 Mev negative hydrogen ion cyclotron facility.

"Contract AEC at (11-1) 34 Project 93, April 1963."

Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

Ion beam modification and analysis of metal/polymer bi-layer thin films

A set of varying-thickness Au-films were thermally evaporated onto poly(styrene-co-acrylonitrile) thin film surfaces. The Au/PSA bi-layer targets were then implanted with 50 keV N+ ions to a fluence of 1 × 1016 ions/cm2 to promote metal-to-polymer adhesion and to enhance their mechanical and electrical performance. Electrical conductivity measurements of the implanted Au/PSA thin films showed a sharp percolation behavior versus the pre-implant Au-film thickness with a percolation threshold near the nominal thickness of 44 Å. The electrical conductivity results are discussed along with the film microstructure and the elemental diffusion/mixing within the Au/PSA interface obtained by scanning electron microscopy (SEM) and ion beam analysis techniques (RBS and ERD).

Tailored conductivity in ion implanted polyetheretherketone

Ion implantation can be used to confer electrical conductivity upon conventional insulating polymers such as polyetheretherketone (PEEK). We have implanted PEEK films using three different types of ion implantation: conventional inert gas and metal ion implantation, and ion beam mixing. We have applied a number of analytical techniques to compare the chemical, structural and electrical properties of these films. The most effective means of increasing electrical conductivity appears to be via ion beam mixing of metals into the polymer, followed by metal ion implantation and finally, inert gas ion implantation. Our results suggest that in all cases, the conducting region corresponds to the implanted layer in the near surface to a depth of similar to750 Angstrom (ion beam mixed) to similar to5000 Angstrom (metal ion). This latter value is significantly higher than would be expected from a purely ballistic standpoint, and can only be attributed to thermal inter-diffusion. Our data also indicates that graphitic carbon is formed within the implant region by chain scission and subsequent cross-linking. All ion implanted samples retained their bulk mechanical properties, i.e. they remained flexible. The implant layers showed no signs of de-lamination. We believe this to be the first comparative study between different implantation techniques, and our results support the proposition that soft electronic circuitry and devices can be created by conductivity engineering with ion beams. (C) 2004 Elsevier B.V. All rights reserved.

Ion trap simulations of quantum fields in an expanding universe

We propose an experiment in which the phonon excitation of ion(s) in a trap, with a trap frequency exponentially modulated at rate kappa, exhibits a thermal spectrum with an Unruh temperature given by k(B)T=h kappa. We discuss the similarities of this experiment to the response of detectors in a de Sitter universe and the usual Unruh effect for uniformly accelerated detectors. We demonstrate a new Unruh effect for detectors that respond to antinormally ordered moments using the ion's first blue sideband transition.

Fast simulation of a quantum phase transition in an ion-trap realizable unitary map

We show that a specific implementation of a unitary map on multiple qubits in an ion trap is physically equivalent to a Hamiltonian evolution that belongs to the same universality class as the transverse Ising Hamiltonian. We suggest experimental signatures, and present numerical simulations for the case of four qubits.

Ion trap transducers for quantum electromechanical oscillators

An enduring challenge for contemporary physics is to experimentally observe and control quantum behavior in macroscopic systems. We show that a single trapped atomic ion could be used to probe the quantum nature of a mesoscopic mechanical oscillator precooled to 4 K, and furthermore, to cool the oscillator with high efficiency to its quantum ground state. The proposed experiment could be performed using currently available technology.

Thermal stability of ion-implanted ZnO

Zinc oxide single crystals implanted at room temperature with high-dose (1.4x10(17) cm(-2)) 300 keV As+ ions are annealed at 1000-1200 degrees C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO. (c) 2005 Americian Institute of Physics.

Atom counting in ultracold gases using photoionization and ion detection

We analyze photoionization and ion detection as a means of accurately counting ultracold atoms. We show that it is possible to count clouds containing many thousands of atoms with accuracies better than N-1/2 with current technology. This allows the direct probing of sub-Poissonian number statistics of atomic samples. The scheme can also be used for efficient single-atom detection with high spatiotemporal resolution. All aspects of a realistic detection scheme are considered, and we discuss experimental situations in which such a scheme could be implemented.

Explicit derivation of the relativistic mass-energy relation for internal kinetic and potential energies of a composite system

A straightforward derivation of relativistic expressions for the mechanical momentum, kinetic and total energies, and mass-energy equivalence (including potential energy) which does not require any knowledge of the energy-momentum relation for electromagnetic waves or consideration of elastic collisions, but is directly based on Newton's second law and Lorentz's transformations, is presented in this paper. The existence of an invariant force is shown to be important for the validity of the relativistic mechanics.

Superconductivity in metal-mixed ion-implanted polymer films

Ion implantation of normally insulating polymers offers an alternative to depositing conjugated organics onto plastic films to make electronic circuits. We used a 50 keV nitrogen ion beam to mix a thin 10 nm Sn/Sb alloy film into the subsurface of polyetheretherketone and report the low temperature properties of this material. We observed metallic behavior, and the onset of superconductivity below 3 K. There are strong indications that the superconductivity does not result from a residual thin film of alloy, but instead from a network of alloy grains coupled via a weakly conducting, ion-beam carbonized polymer matrix. (c) 2006 American Institute of Physics.