Study of W boson production in PbPb and pp collisions at root s(NN)=2.76 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of the Lambda(b) cross section and the (Lambda)over-bar(b) to Lambda(b) ratio with J/psi Lambda decays in pp collisions at root s=7 TeV CMS Collaboration

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Upsilon production cross section in pp collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of the B-s(0) Production Cross Section with B-s(0) -> J/psi phi Decays in pp Collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Observation of Sequential upsilon Suppression in PbPb Collisions

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Observation of long-range, near-side angular correlations in proton-proton collisions at the LHC

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Inclusive b-hadron production cross section with muons in pp collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of the inclusive W and Z production cross sections in pp collisions at root s = 7 TeV with the CMS experiment

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of the cross section for production of b(b)over-barX decaying to muons in pp collisions at root s=7TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Occurrence and geochemistry of metamafic rocks from the Forquilha Eclogite Zone, central Ceara (NE Brazil): geodynamic implications

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A homovalent doping in PMN ceramics by using lithium and scandium cations

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Mechanical properties and dimensional effects of ZnO- and SnO(2)-based varistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Comparative electrical behavior at low and high current of SnO(2)- and ZnO-based varistors

The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.