THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We present analytical expressions for the electrical potential, field, thickness of depletion region, capacitance, and charge accumulated in the depletion region. We also discuss ln I versus V(ap) data. Finally, we compare the characteristics in three cases: (i) impurity states at only a single energy level; (ii) uniform energy distribution of impurity states; and (iii) exponential energy distribution of impurity states.In general, the electrical characteristics of Schottky barriers and metal-insulator-metal structures with Schottky barriers depend strongly on the energy distribution of impurity states.

THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES

The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate blocking contacts (i.e. Metal-Oxide-Insulator-Metal Structure). We consider a uniform distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present expressions for the temperature of maximum current (T-m) and a method to calculate the density of uniformly distributed impurity states. The variation of mobility with electrical field has also been considered. Finally we plot the theoretical curves under different conditions. The present results are closing into available experimental results.

SEMICLASSICAL THEORY OF MAGNETIZATION FOR A 2-DIMENSIONAL NONINTERACTING ELECTRON-GAS

We compute the semiclassical magnetization and susceptibility of non-interacting electrons, confined by a smooth two-dimensional potential and subjected to a uniform perpendicular magnetic field, in the general case when their classical motion is chaotic. It is demonstrated that the magnetization per particle m(B) is directly related to the staircase function N(E), which counts the single-particle levels up to energy E. Using Gutzwiller's trace formula for N, we derive a semiclassical expression for m. Our results show that the magnetization has a non-zero average, which arises from quantum corrections to the leading-order Weyl approximation to the mean staircase and which is independent of whether the classical motion is chaotic or not. Fluctuations about the average are due to classical periodic orbits and do represent a signature of chaos. This behaviour is confirmed by numerical computations for a specific system.

Conjectures and theorems in the theory of entire functions

Motivated by the recent solution of Karlin's conjecture, properties of functions in the Laguerre-Polya class are investigated. The main result of this paper establishes new moment inequalities fur a class of entire functions represented by Fourier transforms. The paper concludes with several conjectures and open problems involving the Laguerre-Polya class and the Riemann xi -function.

Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.

Theory of non-steady state electrical characteristics of metal-insulator-metal structures with schottky barriers and exponentially distributed impurity states

We discuss non-steady state electrical characteristics of a metal-insulator-metal structure. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present an expression for the temperature of maximum current (Tm) and a method to calculate the density of exponentially distributed impurity states. We plot the theoretical curves for various sets of parameters and the variation of Tm, and Im (maximum current) with applied potential for various impurity distributions. The present model can explain the available experimental results. Finally we compare the non-steady state characteristics in three cases: (i) impurity states only at a single energy level, (ii) uniform energetic distribution of impurity states, and (iii) exponential energetic distribution of impurity states.

A generalized theory of electrical characteristics of schottky barriers for amorphous materials

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single energy level and (iii) energetically distributed bulk impurity states. We also consider a thin oxide layer (≈10 Å) between metal and semiconductor. We develop current versus applied potential characteristics considering the variation of the Fermi level very close to contact inside the semiconductor and decrease in barrier height due to the image force effect as well as potential fall on the oxide layer. Finally, we discuss the importance of each parameter, i.e. surface states, distributed impurity states, doping impurity states, thickness of oxide layer etc. on the log I versus applied potential characteristics. The present theory is also applicable for intimate contact, i.e. metal-semiconductor contact, crystalline material structures or for Schottky barriers in insulators or polymers.

Conformai field theory of AdS background with Ramond-Ramond flux

We review a formalism of superstring quantization with manifest six-dimensional spacetime supersymmetry, and apply it to AdS3 × S3 backgrounds with Ramond-Ramond flux. The resulting description is a conformal field theory based on a sigma model whose target space is a certain supergroup SU′(2|2).

Theory of constraints contributions to outbound logistics

Purpose: The purpose of this paper is to systematically describe the key practical contributions of the theory of constraints (TOC) to outbound (distribution) logistics. Design/methodology/approach: Based on theoretical research, this paper presents the main practical aspects of the approach suggested by TOC to outbound logistics and discusses the assumptions upon which it is based. Findings: This paper corroborates the thesis defended by TOC, according to which the current ways of managing outbound logistics, based mainly on sales forecasts lead to difficulties in handling trade-offs between logistics (stock and transportation) costs and stock-out levels. Research limitations/implications: The reported research is of a theoretical nature. Practical implications: TOC offers a proposal that is complementary in many aspects and very distinguishable in others about the way some key processes and elements of supply chain management (SCM) are managed, especially outbound logistics. Originality/value: Considering the dearth of papers dealing with the conceptual articulation and organization of this subject, the paper contributes to systematize the knowledge currently available about the contributions of the TOC to outbound logistics, highlighting the practical implications of applying TOC to outbound logistics. © Emerald Group Publishing Limited.

Fly your kite: a metaphor for a theory of territorial development

Includes bibliography

A Commentary on de Sousa′s towards an Integrative Theory of Consciousness

De Sousa′s comprehensive two-part review of a diversity of contemporary approaches to the study of consciousness is highly welcome. He makes us aware of a proliferation of theoretical and empirical approaches targeting a common theme, but diverging in many ways. He skilfully accomplishes a classification of kinds of approach, identification of the main representatives, their contributions, and respective limitations. However, he does not show how the desired integration could be accomplished. Besides summarising de Sousa′s efficient analytical work, I make critical comments and briefly report my contribution for the integration project.© MSM 2013.

Towards a theory of change

Includes bibliography

Towards a theory of change

Includes bibliography

On the article by Raúl Prebisch, Towards a theory of change": comments"

Includes bibliography

The calcium wave model of the perception-action cycle: Evidence from semantic relevance in memory experiments

We present a general model of brain function (the calcium wave model), distinguishing three processing modes in the perception-action cycle. The model provides an interpretation of the data from experiments on semantic memory conducted by the authors. © 2013 Pereira Jr, Santos and Barros.