Conduction through thin titanium dioxide films

Conduction through TiO₂ films of thickness 100 to 450 Å have been investigated. The samples were prepared by either anodization of Ti evaporation of TiO₂, with Au or Al evaporated for contacts. The anodized samples exhibited considerable hysteresis due to electrical forming, however it was possible to avoid this problem with the evaporated samples from which complete sets of experimental results were obtained and used in the analysis. Electrical measurements included: the dependence of current and capacitance on dc voltage and temperature; the dependence of capacitance and conductance on frequency and temperature; and transient measurements of current and capacitance. A thick (3000 Å) evaporated TiO₂ film was used for measuring the dielectric constant (27.5) and the optical dispersion, the latter being similar to that for rutile. An electron transmission diffraction pattern of a evaporated film indicated an essentially amorphous structure with a short range order that could be related to rutile. Photoresponse measurements indicated the same band gap of about 3 ev for anodized and evaporated films and reduced rutile crystals and gave the barrier energies at the contacts.

The results are interpreted in a self consistent manner by considering the effect of a large impurity concentration in the films and a correspondingly large ionic space charge. The resulting potential profile in the oxide film leads to a thermally assisted tunneling process between the contacts and the interior of the oxide. A general relation is derived for the steady state current through structures of this kind. This in turn is expressed quantitatively for each of two possible limiting types of impurity distributions, where one type gives barriers of an exponential shape and leads to quantitative predictions in c lose agreement with the experimental results. For films somewhat greater than 100 Å, the theory is formulated essentially in terms of only the independently measured barrier energies and a characteristic parameter of the oxide that depends primarily on the maximum impurity concentration at the contacts. A single value of this parameter gives consistent agreement with the experimentally observed dependence of both current and capacitance on dc voltage and temperature, with the maximum impurity concentration found to be approximately the saturation concentration quoted for rutile. This explains the relative insensitivity of the electrical properties of the films on the exact conditions of formation.

The ionic composition of surface waters in the English Lake District, related to bedrock geology, with some singular facts and speculation on the existence of mineral-rich groundwaters

This article is based on a survey of tarns conducted mainly in the summers of 1983 to 1985, plus a survey made in the winter of 1985, in which streams were sampled on the wide variety of rock-types occurring on the fringes of the Lake District. Differences in composition of major ions and their concentrations in the surface waters of Cumbria reflect the complex geological structure of the region. At altitudes above 300 m, on Borrowdale Volcanics and Skiddaw Slates, surface waters are derived from atmospheric precipitation, with additional inputs of some ions - especially calcium and bicarbonate - from catchment rocks and soils. In some of the low-lying large lakes on the fringes of the central fells, water composition is also dominated by inputs from upper catchments; examples are Wastwater, Ullswater and Haweswater. However in other lakes there is evidence (Derwentwater and Bassenthwaite Lake) of inputs from saline groundwater.

The ionic basis of frequency selectivity in hair cells of the bullfrog's sacculus

Hair cells from the bull frog's sacculus, a vestibular organ responding to substrate-borne vibration, possess electrically resonant membrane properties which maximize the sensitivity of each cell to a particular frequency of mechanical input. The electrical resonance of these cells and its underlying ionic basis were studied by applying gigohm-seal recording techniques to solitary hair cells enzymatically dissociated from the sacculus. The contribution of electrical resonance to frequency selectivity was assessed from microelectrode recordings from hair cells in an excised preparation of the sacculus.

Electrical resonance in the hair cell is demonstrated by damped membrane-potential oscillations in response to extrinsic current pulses applied through the recording pipette. This response is analyzed as that of a damped harmonic oscillator. Oscillation frequency rises with membrane depolarization, from 80-160 Hz at resting potential to asymptotic values of 200-250 Hz. The sharpness of electrical tuning, denoted by the electrical quality factor, Q_e, is a bell-shaped function of membrane voltage, reaching a maximum value around eight at a membrane potential slightly positive to the resting potential.

In whole cells, three time-variant ionic currents are activated at voltages more positive than -60 to -50 mV; these are identified as a voltage-dependent, non-inactivating Ca current (I_ca), a voltage-dependent, transient K current (I_a), and a Ca-dependent K current (I_c). The C channel is identified in excised, inside-out membrane patches on the basis of its large conductance (130-200 pS), its selective permeability to Kover Na or Cl, and its activation by internal Ca ions and membrane depolarization. Analysis of open- and closed-lifetime distributions suggests that the C channel can assume at least two open and three closed kinetic states.

Exposing hair cells to external solutions that inhibit the Ca or C conductances degrades the electrical resonance properties measured under current-clamp conditions, while blocking the A conductance has no significant effect, providing evidence that only the Ca and C conductances participate in the resonance mechanism. To test the sufficiency of these two conductances to account for electrical resonance, a mathematical model is developed that describes I_ca, I_c, and intracellular Ca concentration during voltage-clamp steps. I_ca activation is approximated by a third-order Hodgkin-Huxley kinetic scheme. Ca entering the cell is assumed to be confined to a small submembrane compartment which contains an excess of Ca buffer; Ca leaves this space with first-order kinetics. The Ca- and voltage-dependent activation of C channels is described by a five-state kinetic scheme suggested by the results of single-channel observations. Parameter values in the model are adjusted to fit the waveforms of I_ca and I_c evoked by a series of voltage-clamp steps in a single cell. Having been thus constrained, the model correctly predicts the character of voltage oscillations produced by current-clamp steps, including the dependencies of oscillation frequency and Q_e on membrane voltage. The model shows quantitatively how the Ca and C conductances interact, via changes in intracellular Ca concentration, to produce electrical resonance in a vertebrate hair cell.

Photoluminescence of undoped and B-doped ZnO in silicate glasses

Photoluminescence of undoped and B-doped ZnO in silicate glasses was investigated by varying the concentration of ZnO (3550 mol%) and B dopant (0-10 mol%) in the glass matrices. The broad and intense near band edge emissions were observed while the visible light emission was very weak. UV luminescence in all samples was red-shifted relative to the exciton transition in bulk ZnO and enhanced by decreased ZnO concentration due to higher degree of structural integrity and the lower aggregation degree of ZnO. Donor B dopant played the double roles of filling conduction bands to broaden band gap when its concentration was lower than 5 mol%, and emerging with conduction bands to narrow the gap when B dopant exceeded this value. (c) 2007 Elsevier B.V. All rights reserved.

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ~10nm Si nanocrystals, separated by SiO 2 regions. At 300 K, strong Coulomb staircases are seen in the drain-source current-voltage (I ds-V ds) characteristics, and single-electron oscillations are seen in the drain-source current-gate voltage (I ds-V ds) characteristics. From 300-20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using singleelectron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction " bottleneck", suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ~20k BT at 300 K. © 2012 The Japan Society of Applied Physics.