Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method

The influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. (C) 1996 American Institute of Physics.

Defects in GaSb studied by coincidence Doppler broadening measurements

Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.

Photoluminescence measurements on erbium-doped silicon

Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees C annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.

Assessing soil erosion rates on manually-tilled hillslopes in the Sichuan Hilly Basin using Cs-137 and Pb-210(ex) measurements

IEECAS SKLLQG

Measurements of bremsstrahlung spectra of Lanzhou ECR Ion Source No. 3 (LECR3)

In order to diagnose the electron cyclotron resonance (ECR) plasma, electron bremsstrahlung spectra were measured by a HPGe detector on Lanzhou ECR Ion Source No. 3 at IMP. The ion source was operated with argon under various working conditions, including different microwave power, mixing gas, extraction high voltage (HV), and so on. Some of the measured spectra are presented in this article. The dependence of energetic electron population on mixing gas and extraction HV is also described. Additionally, we are looking forward to further measurements on SECRAL (Superconducting ECR Ion Source with Advanced design at Lanzhou).