960 resultados para Gas exchange process


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This paper describes coupled-effect simulations of smart micro gas-sensors based on standard BiCMOS technology. The smart sensor features very low power consumption, high sensitivity and potential low fabrication cost achieved through full CMOS integration. For the first time the micro heaters are made of active CMOS elements (i.e. MOSFET transistors) and embedded in a thin SOI membrane consisting of Si and SiO2 thin layers. Micro gas-sensors such as chemoresistive, microcalorimeteric and Pd/polymer gate FET sensors can be made using this technology. Full numerical analyses including 3D electro-thermo-mechanical simulations, in particular stress and deflection studies on the SOI membranes are presented. The transducer circuit design and the post-CMOS fabrication process, which includes single sided back-etching, are also reported.

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This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

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Rarefied gas flows through micro-channels are simulated using particle approaches, named as the information preservation (IP) method and the direct simulation Monte Carlo (DSMC) method. In simulating the low speed flows in long micro-channels the DSMC method encounters the problem of large sample size demand and the difficulty of regulating boundary conditions at the inlet and outlet. Some important computational issues in the calculation of long micro-channel flows by using the IP method, such as the use the conservative form of the mass conservation equation to guarantee the adjustment of the inlet and outlet boundary conditions and the super-relaxation scheme to accelerate the convergence process, are addressed. Stream-wise pressure distributions and mass fluxes through micro-channels given by the IP method agree well with experimental data measured in long micro-channels by Pong et al. (with a height to length ratio of 1.2:3000), Shih et al. (l.2:4800), Arkilic et al. and Arkilic (l.3:7500), respectively. The famous Knudsen minimum of normalized mass flux is observed in IP and DSMC calculations of a short micro-channel over the entire flow regime from continuum to free molecular, whereas the slip Navier-Stokes solution fails to predict it.

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The present paper contains a detailed study of shock wave reflection from a wedge placed in various suspensions. In past works, the incident shock propagated initially in pure gas and the suspension started only at the leading edge of the deflecting wedge. However, in the present case the entire flow field is filled with a gas-dust suspension and the initial shock wave has steady-state structure relative to the shock front. In former studies the transmitted shock wave starts its propagation into the suspension and is reflected from the wedge at the same time. It is therefore obvious that the two unrelated processes of (2D) reflection and (1D) "transitional" relaxation occur simultaneously. In the present case the suspension behind the incident shock wave has reached steady state (i.e., it is a traveling wave) before the shock reaches the wedge leading edge. The reflection process from the deflecting wedge is studied for different dust mass loadings and different dust-particle diameter. It is shown that when the dust loading is low and the dust particle diameter is small the wave reflection pattern is similar to that observed in a similar pure gas case. In addition, an equilibrium state is reached, behind the evolved waves, very quickly. On the other hand, when the dust loading is relatively high and/or the dust particle diameter is relatively large, the observed reflection wave pattern is very different from that seen in a similar pure gas case. In such cases it takes much longer time to reach an equilibrium state behind the reflecting waves. It is also shown that the dust presence significantly affects the (gas) pressure on the wedge surface. The higher the dust loading is, the higher the pressure on the wedge surface. Suspensions composed of solid particle of different size, but having the same dust mass loading, will approach the same equilibrium pressure. However, it will take longer time to reach an equilibrium state for suspensions having large diameter particles. (C) 2004 Elsevier Ltd. All rights reserved.

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In order to obtain an overall and systematic understanding of the performance of a two-stage light gas gun (TLGG), a numerical code to simulate the process occurring in a gun shot is advanced based on the quasi-one-dimensional unsteady equations of motion with the real gas effect,;friction and heat transfer taken into account in a characteristic formulation for both driver and propellant gas. Comparisons of projectile velocities and projectile pressures along the barrel with experimental results from JET (Joint European Tons) and with computational data got by the Lagrangian method indicate that this code can provide results with good accuracy over a wide range of gun geometry and loading conditions.

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Analytic expression of pellet acceleration by constant base pressure with consideration of gas-wall friction, heat transfer and viscous dissipation that important for high speed injection is obtained. The process of compression stage is formulated by a set of governing equations and can be numerically integrated. Excellent confirmation with experiments is obtained and the ways to optimum match the compression stage with the launch stage are suggested.

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Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

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Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

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Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

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Gas film lubrication of a three-dimensional flat read-write head slider is calculated using the information preservation (IP) method and the direct simulation Monte Carlo (DSMC) method, respectively. The pressure distributions on the head slider surface at different velocities and flying heights obtained by the two methods are in excellent agreement. IP method is also employed to deal with head slider with three-dimensional complex configuration. The pressure distribution on the head slider surface and the net lifting force obtained by the IP method also agree well with those of DSMC method. Much less (of the order about 10(2) less) computational time (the sum of the time used to reach a steady stage and the time used in sampling process) is needed by the IP method than the DSMC method and such an advantage is more remarkable as the gas velocity decreases.

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The development of an openly available layer of scholarly and scientific content requires access to all types of output from the scholarly and scientific process. Interoperable and sustainable infrastructure components are invaluable elements and the content should be clearly licensed for re-use. Open Knowledge will improve the discoverability and re-usability of content across the sectors, to the benefit of higher education and research and will help the (European) knowledge economy to move forward. In Autumn 2013, scoping sessions took place with experts to discuss their views around the value of making knowledge open and the steps which need to be taken to achieve this. These discussions are collected in the Knowledge Exchange discussion paper on Open Knowledge.

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FeNi/FeMn bilayers were grown in a magnetic field and subjected to heat treatments at temperatures of 50 to 350 degrees C in vacuum or in a gas mixture containing oxygen. In the as-deposited state, the hysteresis loop of 30 nm FeNi layer was shifted. Low temperature annealing leads to a decrease of the exchange bias field. Heat treatments at higher temperatures in gas mixture result in partial oxidation of 20 nm thick FeMn layer leading to a nonlinear dependence of coercivity and a switching field of FeNi layer on annealing temperature. The maximum of coercivity and switching field were observed after annealing at 300 degrees C.

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Density functional theory (DFT) calculations were employed to explore the gas-sensing mechanisms of zinc oxide (ZnO) with surface reconstruction taken into consideration. Mix-terminated (10 (1) over bar0) ZnO surfaces were examined. By simulating the adsorption process of various gases, i.e., H-2, NH3, CO, and ethanol (C2H5OH) gases, on the ZnO (10 (1) over bar0) surface, the changes of configuration and electronic structure were compared. Based on these calculations, two gas-sensing mechanisms were proposed and revealed that both surface reconstruction and charge transfer result in a change of electronic conductance of ZnO. Also, the calculations were compared with existing experiments.

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In this paper, multi-hole cooling is studied for an oxide/oxide ceramic specimen with normal injection holes and for a SiC/SiC ceramic specimen with oblique injection holes. A special purpose heat transfer tunnel was designed and built, which can provide a wide range of Reynolds numbers (10(5)similar to 10(7)) and a large temperature ratio of the primary flow to the coolant (up to 2.5). Cooling effectiveness determined by the measured surface temperature for the two types of ceramic specimens is investigated. It is found that the multi-hole cooling system for both specimens has a high cooling efficiency and it is higher for the SiC/SiC specimen than for the oxide/oxide specimen. Effects on the cooling effectiveness of parameters including blowing ratio, Reynolds number and temperature ratio, are studied. In addition, profiles of the mean velocity and temperature above the cooling surface are measured to provide further understanding of the cooling process. Duplication of the key parameters for multi-hole cooling, for a representative combustor flow condition (without radiation effects), is achieved with parameter scaling and the results show the high efficiency of multi-hole cooling for the oblique hole, SiC/SiC specimen. (C) 2008 Elsevier Ltd. All rights reserved.