944 resultados para Fiestas-Gandia
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Tit. tomado de comienzo de texto
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Contiene: Las poesías que se compusieron en obsequio de nuestros soberanos, señalándolas con la debida distincion
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Contiene : La Circe, p. 1-106 ; La Mañana de San Juan, p. 107-136 ; La Rosa Blanca, p. 137-164 ; La Dragontea, p. 165-373 ; Fiestas de Denia, p. 376-428 ; Soneto de Carlos Boil a Lope de Vega, p. 429 ; Poesias Varias, p. 431-508
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Contiene : Relación de las fiestas que la ... Villa de Madrid, hizo en la coronización de ... San Isidro ..., p. VII-LXXIV ; La niñez de San Isidro, p.1-74 ; La juventud de San Isidro, p.75-148 ; Justa poetica, p 149-426
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Contiene: Fiestas del SSmo. Sacramento repartidas en doce Actos Sacramentales .../ compuesta por el Phenix de España Fray Lope Felix de Vega Carpio ... ; recogidas por el Lic. Joseph Ortiz de Villena ...
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Título tomado del principio del texto
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Tít. tomado de principio de texto
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Hay un ejemplar encuadernado con: Oratio ad divinam Sapientiam : (NP08/27).
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Contiene: Breve de Alejandro VII fechada en Roma en Sta. María la Mayor el dia 28 de julio de 1656
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Sign.: A-C4
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Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).
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