Well-defined higher-molecular-weight polyacrylonitrile via RAFT technique in the presence of disulfide compounds as a source of chain transfer agent

Well-defined polyacrylonitrile with a higher number-average molecular weight (R.) up to 200,000 and a lower polydispersity index (PDI, 1.7-2.0) was firstly obtained via reversible addition-fragmentation chain transfer (RAFT) process. This was achieved by selecting a stable, easy way to prepare disulfide compound intermediates including bis(thiobenzoyl) disulfide (BTBDS) and bis(thiophenylacetoyl) disulfide (BTPADS) to react with azobis(isobutyronitrile) to directly synthesize RAFT agents in situ.

Partial Evaporation of Strontium Zirconate During Atmospheric Plasma Spraying

Perovskite-type SrZrO3 has been investigated as a candidate material for thermal barrier coating application. During plasma spraying of SrZrO3, SrO volatilized more than ZrO2 and the coating composition deviates from initial stoichiometry. In this investigation, partial evaporation was investigated by spraying SrZrO3 powders into water. The influences of spraying current, distance and particle size of the powder on the partial evaporation were also investigated in a quantitative way. With optimized spraying parameters, stoichiometric SrZrO3 coating was produced by adding an excess amount of Sr in the precursors before plasma spraying to compensate for the volatilized component.

Crystal Growth Transition from Flat-On to Edge-On Induced by Solvent Evaporation in Ultrathin Films of Polystyrene-b-Poly(ethylene oxide)

The transition of lamellar crystal orientation from flat-on to edge-on in ultrathin films of polystyrene-b-poly(ethylene oxide) (PS-b-PEO) via solvent vapor (toluene) treatment Was investigated. When the as-prepared film was treated in saturated solvent vapor, breakout crystals could form quickly, and then they transformed from square single crystals (flat-on lamellae) to dendrites and finally to nanowire crystals (edge-on lamellae). Initially, heterogeneous nucleation tit the polymer/substrate interface dominated the structure evolution, leading to flat-on lamellar crystals orientation. And the transition from faceted habits to dendrites indicated a transition of underlying mechanism from nucleation-controlled to diffusion-limited growth. As the solvent molecules gradually diffused into the polymer/substrate interface, it will subsequently weaken the polymer-substrate interaction.

Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate

We have observed, respectively, a negative differential resistance (NDR) and switching conduction in current-voltage (I-V) characteristics of organic diodes based on copper phthalocyanine (CuPc) film sandwiched between indium-tin-oxide (ITO) and aluminum (Al) by controlling the evaporation rate. The NDR effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (WORM) memory characteristics. The traps in the organic layer and interfacial dipole have been used to explain the NDR effect and switching conduction. This opens up potential applications for CuPc organic semiconductor in low power memory and logic circuits.

Synthesis of CdTe nanocrystals using Te nanorods as the Te source and the formation of microtubes with red fluorescence

Here, we report an alternative route to the preparation of highly luminescent CdTe nanocrystals (NCs) using Te nanorods instead of freshly prepared NaHTe as the Te source via a one-pot route under hydrothermal conditions. Furthermore, microtubes with red fluorescence were generated via simply aging the above CdTe NC suspension under ambient conditions.

Individual dispersion of synthetic imogolite nanotubes via droplet evaporation

Morphology of synthetic imogolite nanotubes formed in droplet evaporation was investigated by transmission electron microscopy and electron diffraction. The nanotubes form a dense entangled network at higher concentrations, while at lower concentrations the nanotubes are liable to form oriented bundles. Under enthanol atmosphere, individual dispersion of nanotubes was observed for the first time, which reveals the length polydispersity of synthetic imogolite nanotubes.

Polypropylene as a carbon source for the synthesis of multi-walled carbon nanotubes via catalytic combustion

Multi-walled carbon nanotubes (MWCNTs) were efficiently synthesized by catalytic combustion of polypropylene (PP) using nickel compounds (such as Ni2O3, NiO, Ni(OH)(2) and NiCO3 (.) 2Ni(OH)(2)) as catalysts in the presence of organic-modified montmorillonite (OMMT) at 630-830 degrees C. Morphologies of the sample undergoing different combustion times were observed to investigate actual process producing MWCNTs by this method. The obtained MWCNTs were characterized by X-ray diffraction (XRD), transmission electron microscope and Raman spectroscopy. The yield of MWCNTs was affected by the composition of PP mixtures with OMMT and nickel compounds and the combustion temperature. The proton acidic sites from the degraded OMMT layers due to the Hoffman reaction of the modifiers at high temperature played an important role in the catalytic degradation of PP to supply carbon sources that are easy to be catalyzed by nickel catalyst for the growth of MWCNTs. The XRD measurements demonstrated that the nickel compounds were in situ reduced into the Ni(0) state with the aid of hydrogen gas and/or hydrocarbons in the degradation products of PP, and the Ni(O) was really the active site for the growth of MWCNTs. The combination of nickel compounds with OMMT was a key factor to efficiently synthesize MWCNTs via catalytic combustion of PP.

Morphology and structure of poly(di-n-butylsilane) single crystals prepared by controlling kinetic process of solvent evaporation

The silicon backbone conformation in poly(di-n-butylsilane) (PDBS) has been shown to be a 7/3 helix at ambient conditions, which is in marked contrast to the near-planar conformation of its homologous polymers with side chain lengths of one to three or six to eight carbon atoms. In this work, both the 7/3 helical and near-planar chain conformations are achieved by controlling the solvent evaporation rate around room temperature. The chain conformation and crystal structure obtained in this method have been correlated to the crystal morphology by wide-angle X-ray diffraction, transmission electron microscopy, electron diffraction, optical microscopy, atomic force microscopy, and UV absorption spectrum. The lath-shaped single crystals obtained at 12 degreesC correspond to an orthorhombic form with near-planar chain conformation whereas the lozenge-shaped single crystals obtained at 30 degreesC (in coexistence with the lath-shaped crystals) are orthohexagonal with a 7/3 helix.

Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes

N-type organic thin-film transistors (OTFTs) employing hexadecafluorophthalocyaninatocopper (F16CuPc) as active layer and p-type copper phthalocyanine (CuPc) as buffer layer are demonstrated. The highest field-effect mobility is 7.6x10(-2) cm(2)/V s. The improved performance was attributed to the decrease of contact resistance due to the introduction of highly conductive F16CuPc/CuPc organic heterojunction. Therefore, current method provides an effective path to improve the performance of OTFTs.

Organic integrated pixels fabricated by a full evaporation method

An organic integrated pixel consisting of an organic light-emitting diode driven by an organic thin-film field-effect transistor (OTFT) was fabricated by a full evaporation method oil a transparent glass substrate. The OTFT was designed as a top-gate Structure, and the insulator is composed of a double-layer polymer of Nylon 6 and Teflon to lower the operation voltage and the gate-leakage current, and improve the device stability. The field-effect mobility of the OTFT is more than 0.5 cm(2) V-1 s(-1), and the on/off ratio is larger than 10(3). The brightness of the pixel reached as large as 300 cd m(-2) at a driving current of 50 mu A.

Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes

An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices.

CHEMICAL-IONIZATION MASS-SPECTROMETRY OF BENZOYL PEROXIDE - A RADICAL AROMATIC-SUBSTITUTION RESULTING IN BIPHENYLCARBOXYLIC ACID IN THE GAS-PHASE

A radical aromatic substitution resulting in biphenylcarboxylic acid is inferred for the decomposition of benzoyl peroxide from the chemical ionization and collision-induced dissociation mass spectra. The thermolysis of benzoyl peroxide gives rise to a benzoyloxy radical, which undergoes rapid decarboxylation and hydrogen abstraction leading to phenyl radical and benzoic acid, respectively. Attack of the resulting phenyl radical on the benzoic acid results in bipbenylcarboxylic acid. On the other hand, the phenyl radical abstracts a hydrogen atom to yield benzene, which is then subjected to the attack of a benzoyloxy radical, affording phenyl benzoate. This substitution reaction rather than the recombination of benzoyloxy and phenyl radicals is found to be responsible for the formation of phenyl benzoate under the present conditions.