Processing and characterization of PbSnTe-based thermoelectric materials made by mechanical alloying

The research reported in this dissertation investigates the processes required to mechanically alloy Pb1-xSnxTe and AgSbTe2 and a method of combining these two end compounds to result in (y)(AgSbTe2)–(1 - y)(Pb1-xSnxTe) thermoelectric materials for power generation applications. In general, traditional melt processing of these alloys has employed high purity materials that are subjected to time and energy intensive processes that result in highly functional material that is not easily reproducible. This research reports the development of mechanical alloying processes using commercially available 99.9% pure elemental powders in order to provide a basis for the economical production of highly functional thermoelectric materials. Though there have been reports of high and low ZT materials fabricated by both melt alloying and mechanical alloying, the processing-structure-properties-performance relationship connecting how the material is made to its resulting functionality is poorly understood. This is particularly true for mechanically alloyed material, motivating an effort to investigate bulk material within the (y)(AgSbTe2)–(1 - y)(Pb1-xSnx- Te) system using the mechanical alloying method. This research adds to the body of knowledge concerning the way in which mechanical alloying can be used to efficiently produce high ZT thermoelectric materials. The processes required to mechanically alloy elemental powders to form Pb1-xSnxTe and AgSbTe2 and to subsequently consolidate the alloyed powder is described. The composition, phases present in the alloy, volume percent, size and spacing of the phases are reported. The room temperature electronic transport properties of electrical conductivity, carrier concentration and carrier mobility are reported for each alloy and the effect of the presence of any secondary phase on the electronic transport properties is described. An mechanical mixing approach for incorporating the end compounds to result in (y)(AgSbTe2)–(1-y)(Pb1-xSnxTe) is described and when 5 vol.% AgSbTe2 was incorporated was found to form a solid solution with the Pb1-xSnxTe phase. An initial attempt to change the carrier concentration of the Pb1-xSnxTe phase was made by adding excess Te and found that the carrier density of the alloys in this work are not sensitive to excess Te. It has been demonstrated using the processing techniques reported in this research that this material system, when appropriately doped, has the potential to perform as highly functional thermoelectric material.

IN-SITU TEM PLASMA CHIP NANOFABRICATION AND CHARACTERIZATION

A silicon-based microcell was fabricated with the potential for use in in-situ transmission electron microscopy (TEM) of materials under plasma processing. The microcell consisted of 50 nm-thick film of silicon nitride observation window with 60μm distance between two electrodes. E-beam scattering Mont Carlo simulation showed that the silicon nitride thin film would have very low scattering effect on TEM primary electron beam accelerated at 200 keV. Only 4.7% of primary electrons were scattered by silicon nitride thin film and the Ar gas (60 μm thick at 1 atm pressure) filling the space between silicon nitride films. Theoretical calculation also showed low absorption of high-energy e-beam electrons. Because the plasma cell needs to survive the high vacuum TEM chamber while holding 1 atm internal pressure, a finite element analysis was performed to find the maximum stress the low-stress silicon nitride thin film experienced under pressure. Considering the maximum burst stress of low-stress silicon nitride thin film, the simulation results showed that the 50 nm silicon nitride thin film can be used in TEM under 1 atm pressure as the observation window. Ex-situ plasma generation experiment demonstrated that air plasma can be ignited at DC voltage of 570. A Scanning electron microscopy (SEM) analysis showed that etching and deposition occurred during the plasma process and larger dendrites formed on the positive electrode.

The Effects of Low Dose Irradiation and Storage Time on Aroma of Fresh Beef Patties in Anaerobic Packaging

The effects of electron beam irradiation, anaerobic packaging, and storage times on the aroma of raw ground beef patties were investigated. Patties were coarse ground at three days postmortem, and then fine ground and packaged at three, six, and nine days postmortem. Patties were irradiated immediately after packaging, or three days after packaging at 2 kGy, and then stored at 2.5 °C ñ1.5 °C for four days. Non-irradiated controls were held under similar conditions. After four days of storage for each postmortem time (three, six, and nine days), sensory aroma evaluations were performed on all samples. Irradiated and non-irradiated patties with the shortest postmortem storage times had the most desirable aroma scores. Controls had significantly (p £ .05) more desirable aroma scores than irradiated patties.

Beamlet based direct aperture optimization for MERT using a photon MLC

PURPOSE A beamlet based direct aperture optimization (DAO) for modulated electron radiotherapy (MERT) using photon multileaf collimator (pMLC) shaped electron fields is developed and investigated. METHODS The Swiss Monte Carlo Plan (SMCP) allows the calculation of dose distributions for pMLC shaped electron beams. SMCP is interfaced with the Eclipse TPS (Varian Medical Systems, Palo Alto, CA) which can thus be included into the inverse treatment planning process for MERT. This process starts with the import of a CT-scan into Eclipse, the contouring of the target and the organs at risk (OARs), and the choice of the initial electron beam directions. For each electron beam, the number of apertures, their energy, and initial shape are defined. Furthermore, the DAO requires dose-volume constraints for the structures contoured. In order to carry out the DAO efficiently, the initial electron beams are divided into a grid of beamlets. For each of those, the dose distribution is precalculated using a modified electron beam model, resulting in a dose list for each beamlet and energy. Then the DAO is carried out, leading to a set of optimal apertures and corresponding weights. These optimal apertures are now converted into pMLC shaped segments and the dose calculation for each segment is performed. For these dose distributions, a weight optimization process is launched in order to minimize the differences between the dose distribution using the optimal apertures and the pMLC segments. Finally, a deliverable dose distribution for the MERT plan is obtained and loaded back into Eclipse for evaluation. For an idealized water phantom geometry, a MERT treatment plan is created and compared to the plan obtained using a previously developed forward planning strategy. Further, MERT treatment plans for three clinical situations (breast, chest wall, and parotid metastasis of a squamous cell skin carcinoma) are created using the developed inverse planning strategy. The MERT plans are compared to clinical standard treatment plans using photon beams and the differences between the optimal and the deliverable dose distributions are determined. RESULTS For the idealized water phantom geometry, the inversely optimized MERT plan is able to obtain the same PTV coverage, but with an improved OAR sparing compared to the forwardly optimized plan. Regarding the right-sided breast case, the MERT plan is able to reduce the lung volume receiving more than 30% of the prescribed dose and the mean lung dose compared to the standard plan. However, the standard plan leads to a better homogeneity within the CTV. The results for the left-sided thorax wall are similar but also the dose to the heart is reduced comparing MERT to the standard treatment plan. For the parotid case, MERT leads to lower doses for almost all OARs but to a less homogeneous dose distribution for the PTV when compared to a standard plan. For all cases, the weight optimization successfully minimized the differences between the optimal and the deliverable dose distribution. CONCLUSIONS A beamlet based DAO using multiple beam angles is implemented and successfully tested for an idealized water phantom geometry and clinical situations.

Pigments at time series station DYNAPROC

Phytoplankton taxonomic pigments and primary production were measured at the JGOFS-France time-series station DYFAMED in the northwestern Mediterranean Sea during May 1995 to investigate changes in phytoplankton composition and the biogeochemical implications (DYNAPROC experiment). The study period covered the transitional situation from late spring bloom to pre-oligotrophic. The late spring bloom situation, occurring at the beginning of the study, revealed high chlorophyll a concentrations (maximum 3 mg/m**3 at 30 m) and high primary production (maximum 497 mg C/m**2/ 14 h). At the end of the experiment, the trophic regime shifted towards pre-oligotrophic and was characterized by lower chlorophyll a concentrations (<1 mg/m**3), although primary production still remained high (659 mg C/m**2/ 14 h). At termination of the spring bloom, the phytoplankton community was composed of chromophyte nanoflagellates (38±4%), diatoms (29±2%), cryptophytes (12±1%) and cyanobacteria (8±1%). During the transition to the pre-oligotrophic period, the contribution of small cells increased (e.g. cyanobacteria 18±2%, green flagellates 5±1%). Vertical profiles of pigments revealed a partition of the phytoplankton groups: cyanobacteria were most abundant in the surface layer, nanoflagellates containing 19'-HF+19'BF at the depth of chlorophyll maximum, whereas diatoms were located below the chlorophyll maximum. At termination of the spring bloom, a wind event induced vertical transport of nutrients into the euphotic layer. Phytoplankton groups responded differently to the event: initially, diatom concentrations increased (for 24 h) then rapidly decreased. In contrast, all others groups decreased just after the event. The long-term effect was a decrease of biomass of dominant groups (diatoms and chromophyte nanoflagellates), which accelerated the community succession and hence contributed to the oligotrophic transition.

Geochemistry of ash layers from the Bonin Forearc

Many ash-rich layers, varying from a few millimeters to several centimeters thick, were identified in the sedimentary sequences penetrated during Ocean Drilling Program Leg 125 at Sites 782, 784, and 786, located about 400 to 500 km south of Tokyo in the Bonin forearc. The total age range of the ash layers is from Eocene to Pleistocene, although not all sites cover this full span. The ashes consist of vitric, microlite-bearing, and crystal-rich components; the glassy shards are typically highly vesicular, with elongate, flattened bubbles. The dominant crystalline phases are orthopyroxene, clinopyroxene, and plagioclase. The major-element compositions of individual vitric shards collected from selected layers of Holes 782A, 784A, and 786A were determined by electron microprobe analyses; particular care was taken to ensure that the analytical results were not compromised by electron beam damage to the glasses. Compositions range from basalt through andesite and dacite to rhyolite and generally belong to a tholeiitic, low-K suite. There is no indication of any regular secular change during the evolution of the Bonin arc from tholeiitic through calc-alkalic to alkali compositions with time. In Holes 782A and 784A, some high-K rhyolite compositions of late Miocene and Pleistocene age are present. A clear chemical distinction has existed since arc inception between the source(s) of these ashes and the upper mantle source(s) tapped during construction of the igneous basement that formed the forearc.

Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Ferromagnetic resonance and magnetooptic study of submicron epitaxial Fe(001) stripes

We present a combined magnetooptic and ferromagnetic resonance study of a series of arrays of single-crystalline Fe stripes fabricated by electron beam lithography on epitaxial Au(001)/Fe(001)/MgO(001) films grown by pulsed laser deposition. The analysis of the films revealed a clear fourfold magnetocrystalline anisotropy, with no significant presence of other anisotropy sources. The use of a large series of arrays, with stripe widths between 140 and 1000 nm and separation between them of either 200 nm or 500 nm, allowed studying their magnetization processes and resonance modes as well as the effects of the dipolar interactions on both. The magnetization processes of the stripes were interpreted in terms of a macrospin approximation, with a good agreement between experiments and calculations and negligible influence of the dipolar interactions. The ferromagnetic resonance spectra evidenced two types of resonances linked to bulk oscillation modes, essentially insensitive to the dipolar interactions, and a third one associated with edge-localized oscillations, whose resonance field is strongly dependent on the dipolar interactions. The ability to produce a high quality, controlled series of stripes provided a good opportunity to achieve an agreement between the experiments and calculations, carried out by taking into account just the Fe intrinsic properties and the morphology of the arrays, thus evidencing the relatively small role of other extrinsic factors.

Floating bare tether as upper atmosphere probe

Use of a conductive bare tape electrically floating in low Earth orbit as an effective electron beam source to produce artificial auroral effects, free of problems that mard tandard beams, is considered. Ambient ions impacting the tape with keV energies over most of its length liberate secondary electrons that race down the magnetic field, excite neutrals in the E layer, and result in auroral emissions. The tether would operate with both a power supply and a plasma contactor off at nighttime; power and contactor would be on at daytime for reboost. Tomographic analysis of auroral emissions from the footprint of the beam, as observed from the spacecraft, can provide density profiles of dominant neutral species in the E layer. A characteristic tether system, at altitude 300 km and moderate orbital inclination, would involve an aluminum tape with a length of 20 km, a width of 15 mm, and a thickness of 0.2 mm for a full-system mass around 1200 kg, with two thirds going into the power subsystem.

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Estudo de efeitos da polarização eletrostática periférica no Tokamak TCABR

Efeitos da polarização eletrostática de eletrodos na periferia de tokamaks têm sido investigados em pequenos tokamaks e mesmo em alguns tokamaks de grande porte. Em geral as experiências são realizadas em condições em que bifurcação do campo elétrico radial é obtida, processo este identificado como modo H de polarização. No Tokamak TCABR, as experiências indicam que o confinamento aumenta para tensões aplicadas até +300 volts, atingindo um máximo de duas vezes o tempo de confinamento do modo L, mas sem bifurcação. Indícios de bifurcação foram notados com +400 V de polarização, mas a descarga termina devido à excitação da atividade MHD, ainda sob investigação. No presente trabalho, a pesquisa é aprofundada com a utilização de uma sonda de Langmuir com 18 pinos dispostos em duas fileiras sob a forma de um ancinho (rake probe) o que permite a medição da temperatura, densidade e flutuação de potencial ao longo do raio menor na periferia do Tokamak. A resolução temporal desse sistema é de cerca de 0,5 ms, para a temperatura, e 5 microssegundos para densidade e potencial flutuante do plasma. Outra sonda eletrostática com 5-pinos na mesma posição radial, mas em diferentes posições poloidal e toroidal foi usada para medições de turbulência e transporte de partículas. Os efeitos da polarização foram investigados e indicam que os níveis de turbulência e transporte começam a diminuir entre +150 e +200 V e para +300 V chegam a atingir uma quase supressão. Nesse mesmo intervalo de tensão a densidade começa a aumentar e para +300 V chega a ser um fator de aproximadamente 2. Quanto ao perfil de temperatura a variação é pouco significativa, mas as incertezas das medidas são maiores. Esses dados são compatíveis com a criação de uma barreira de transporte na região entre o eletrodo em r = 17 cm e o limitador em a = 18 cm. Além disso, o campo elétrico radial mostra forte cisalhamento nessa região. Tomando o início da subida do potencial flutuante como origem de uma escala de tempo, o atraso temporal do início da subida da densidade de elétrons e o atraso do início do decréscimo do transporte de partículas foram medidos. Os resultados são 50 microssegundos para a densidade de elétrons e 60 microssegundos para o transporte de partículas. A questão dos limiares de potência é discutida no texto. Os dados desta experiência indicam que o campo elétrico radial desempenha o papel principal para a melhoria do confinamento.

Analysis of the Kondo effect in ferromagnetic atomic-sized contacts

Atomic contacts made of ferromagnetic metals present zero-bias anomalies in the differential conductance due to the Kondo effect. These systems provide a unique opportunity to perform a statistical analysis of the Kondo parameters in nanostructures since a large number of contacts can be easily fabricated using break-junction techniques. The details of the atomic structure differ from one contact to another so a large number of different configurations can be statistically analyzed. Here we present such a statistical analysis of the Kondo effect in atomic contacts made from the ferromagnetic transition metals Ni, Co, and Fe. Our analysis shows clear differences between materials that can be understood by fundamental theoretical considerations. This combination of experiments and theory allows us to extract information about the origin and nature of the Kondo effect in these systems and to explore the influence of geometry and valence in the Kondo screening of atomic-sized nanostructures.

Onset of energy dissipation in ballistic atomic wires

Electronic transport at finite voltages in free-standing gold atomic chains of up to seven atoms in length is studied at low temperatures using a scanning tunneling microscope. The conductance vs voltage curves show that transport in these single-mode ballistic atomic wires is nondissipative up to a finite voltage threshold of the order of several mV. The onset of dissipation and resistance within the wire corresponds to the excitation of the atomic vibrations by the electrons traversing the wire and is very sensitive to strain.

Giant magnetoresistance in ultrasmall graphene based devices

By computing spin-polarized electronic transport across a finite zigzag graphene ribbon bridging two metallic graphene electrodes, we demonstrate, as a proof of principle, that devices featuring 100% magnetoresistance can be built entirely out of carbon. In the ground state a short zigzag ribbon is an antiferromagnetic insulator which, when connecting two metallic electrodes, acts as a tunnel barrier that suppresses the conductance. The application of a magnetic field makes the ribbon ferromagnetic and conductive, increasing dramatically the current between electrodes. We predict large magnetoresistance in this system at liquid nitrogen temperature and 10 T or at liquid helium temperature and 300 G.