A finite-volume shallow layer method for the MHD instabilities in an aluminium production cell

An electrolytic cell for Aluminium production contains molten metal and molten electrolyte, which are subject to high dc-currents and magnetic fields. Lorentz forces arising from the cross product of current and magnetic field may amplify natural gravity waves at the interface between the two fluids, leading to short circuits in extreme cases. The external magnetic field and current distribution in the production cell is computed through a detailed finite element analysis at Torino Polytechnic. The results are then used to compute the magnetohydrodynamic and thermal effects in the aluminium/electrolyte bath. Each cell has lateral dimensions of 6m x 2m, whilst the bath depth is only 30cm. the electrically resistive electrolyte path, which is critical in the operation of the cell, has layer depth of only a few centimetres below each carbon anode. Because the shallow dimensions of the liquid layer a finite-volume shallow-layer technique has been used at Greenwich to compute the resulting flow-field and interface perturbations. The information obtained from this method, i.e. depth averaged velocities and aluminium/electrolyte interface position is then embedded in the three-dimensional finite volume code PHYSICA and will be used to compute the heat transfer and phase change in the cell.

The role of automated sorting in the recovery of aluminium alloys waste

Selected papers from the 3rd Edition of the International Conference on Wastes: Solutions, Treatments and Opportunities

Physiological and molecular analysis of the interaction between aluminium toxicity and drought stress in common bean (Phaseolus vulgaris)

Aluminium (Al) toxicity and drought are two major factors limiting common bean (Phaseolus vulgaris) production in the tropics. Short-term effects of Al toxicity and drought stress on root growth in acid, Al-toxic soil were studied, with special emphasis on Al-drought interaction in the root apex. Root elongation was inhibited by both Al and drought. Combined stresses resulted in a more severe inhibition of root elongation than either stress alone. This result was different from the alleviation of Al toxicity by osmotic stress (-0.60 MPa polyethylene glycol) in hydroponics. However, drought reduced the impact of Al on the root tip, as indicated by the reduction of Al-induced callose formation and MATE expression. Combined Al and drought stress enhanced up-regulation of ACCO expression and synthesis of zeatin riboside, reduced drought-enhanced abscisic acid (ABA) concentration, and expression of NCED involved in ABA biosynthesis and the transcription factors bZIP and MYB, thus affecting the regulation of ABA-dependent genes (SUS, PvLEA18, KS-DHN, and LTP) in root tips. The results provide circumstantial evidence that in soil, drought alleviates Al injury, but Al renders the root apex more drought-sensitive, particularly by impacting the gene regulatory network involved in ABA signal transduction and cross-talk with other phytohormones necessary for maintaining root growth under drought.

Alteration of cell-wall porosity is involved in osmotic stress-induced enhancement of aluminium resistance in common bean (Phaseolus vulgaris L.)

Aluminium (Al) toxicity and drought are the two major abiotic stress factors limiting common bean production in the tropics. Using hydroponics, the short-term effects of combined Al toxicity and drought stress on root growth and Al uptake into the root apex were investigated. In the presence of Al stress, PEG 6000 (polyethylene glycol)-induced osmotic (drought) stress led to the amelioration of Al-induced inhibition of root elongation in the Al-sensitive genotype VAX 1. PEG 6000 (>> PEG 1000) treatment greatly decreased Al accumulation in the 1 cm root apices even when the roots were physically separated from the PEG solution using dialysis membrane tubes. Upon removal of PEG from the treatment solution, the root tips recovered from osmotic stress and the Al accumulation capacity was quickly restored. The PEG-induced reduction of Al accumulation was not due to a lower phytotoxic Al concentration in the treatment solution, reduced negativity of the root apoplast, or to enhanced citrate exudation. Also cell-wall (CW) material isolated from PEG-treated roots showed a low Al-binding capacity which, however, was restored after destroying the physical structure of the CW. The comparison of the Al(3+), La(3+), Sr(2+), and Rb(+) binding capacity of the intact root tips and the isolated CW revealed the specificity of the PEG 6000 effect for Al. This could be due to the higher hydrated ionic radius of Al(3+) compared with other cations (Al(3+) >> La(3+) > Sr(2+) > Rb(+)). In conclusion, the results provide circumstantial evidence that the osmotic stress-inhibited Al accumulation in root apices and thus reduced Al-induced inhibition of root elongation in the Al-sensitive genotype VAX 1 is related to the alteration of CW porosity resulting from PEG 6000-induced dehydration of the root apoplast.

Reynaers Aluminium commercial & marketing plan to Angola

The current paper seeks to fulfill an internationalization action plan for Reynaers Aluminium Portugal (RAP) to address the Angolan construction market. Strong market opportunities have been spotted, namely: an increasingly well-succeeded presence of Reynaers’ customers; Reynaers portfolio responsive to an increasingly quality demanding Angolan market; strong support from the multinational chain. Aligned with a constant threat from the Portuguese economy RAP seeks to establish a stronger presence in Angola. Indeed the company has been approaching this market since 2008, resulting in the identification of key players and synergies spotted. For this purpose, the aim is to develop a Commercial and Marketing Plan while taking into consideration the results of the previous company interventions that reflect this market’s DNA.

Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene)

A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier formed between aluminium and electrodeposited poly(3-methylthiophene) is reported. The devices show rectification ratios up to 2 x 10(4) which can be increased further after post-metal annealing. The reverse characteristics of the devices follow predictions based on the image-force lowering of the Schottky barrier, from which the doping density can be estimated, As the forward voltage increases, the device current is limited by the bulk resistance of the polymer with some evidence for injection limitation at the gold counter-electrode at high bias. In the bulk-limited regime, the device current is thermally activated near room temperature with an activation energy in the range 0.2-0.3 eV. Below about 150 K the device current is almost independent of temperature. Capacitance-voltage plots obtained at frequencies well below the device relaxation frequency indicate the presence of two distinct acceptor states, A set of shallow acceptor states are active in forward bias and are believed to determine the bulk conductivity of the polymer. A set of deeper accepters are active only for very small forward voltages and for all reverse voltages, namely when band banding causes the Fermi energy to cross these states. The density of these deeper states is approximately an order of magnitude greater than that of the shallow states. Evidence is presented also for the influence of fabrication conditions on the formation of an insulating interfacial layer at the rectifying interface. The presence of such a layer leads to inversion at the polymer surface and a modification of the I-V characteristics.

Compact discs as versatile cost-effective substrates for releasable nanopatterned aluminium films

We demonstrate that standard polycarbonate compact disk surfaces can provide unique adhesion to Al films that is both strong enough to permit Al film nanopatterning and weak enough to allow easy nanopatterned Al film detachment using Scotch tape. Transferred Al nanohole arrays on Scotch tape exhibit excellent optical and plasmonic performance.