ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target

ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 degrees C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19 degrees with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 degrees C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed. (c) 2006 Elsevier B.V. All rights reserved.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

Excited ions in intense femtosecond laser pulses: Laser-induced recombination

Electron-ion recombination in a laser-induced electron recollision is of fundamental importance as the underlying mechanism responsible for the generation of high harmonic radiation, and hence for the production of attosecond pulse trains in the extreme ultraviolet and soft X-ray spectral regions. By using an ion beam target, remotely prepared to be partially in long-lived excited states, the recombination process has for the first time been directly observed and studied.

Two-Photon Inner-Shell Ionization in the Extreme Ultraviolet

We have observed the simultaneous inner-shell absorption of two extreme-ultraviolet photons by a Xe atom in an experiment performed at the short-wavelength free electron laser facility FLASH. Photoelectron spectroscopy permitted us to unambiguously identify a feature resulting from the ionization of a single electron of the 4d subshell of Xe by two photons each of energy (93 +/- similar to 1) eV. The feature's intensity has a quadratic dependence on the pulse energy. The results are discussed and interpreted within the framework of recent results of ion spectroscopy experiments of Xe obtained at ultrahigh irradiance in the extreme-ultraviolet regime.

Attosecond phase locking of harmonics emitted from laser-produced plasmas

Laser-driven coherent extreme-ultraviolet (XUV) sources provide pulses lasting a few hundred attoseconds(1,2), enabling real-time access to dynamic changes of the electronic structure of matter(3,4), the fastest processes outside the atomic nucleus. These pulses, however, are typically rather weak. Exploiting the ultrahigh brilliance of accelerator-based XUV sources(5) and the unique time structure of their laser-based counterparts would open intriguing opportunities in ultrafast X-ray and high-field science, extending powerful nonlinear optical and pump-probe techniques towards X-ray frequencies, and paving the way towards unequalled radiation intensities. Relativistic laser-plasma interactions have been identified as a promising approach to achieve this goal(6-13). Recent experiments confirmed that relativistically driven overdense plasmas are able to convert infrared laser light into harmonic XUV radiation with unparalleled efficiency, and demonstrated the scalability of the generation technique towards hard X-rays(14-19). Here we show that the phases of the XUV harmonics emanating from the interaction processes are synchronized, and therefore enable attosecond temporal bunching. Along with the previous findings concerning energy conversion and recent advances in high-power laser technology, our experiment demonstrates the feasibility of confining unprecedented amounts of light energy to within less than one femtosecond.

Application of a picosecond laser plasma continuum light source to a dual-laser plasma photoabsorption experiment

The characteristics of an extreme-ultraviolet (XUV) continuum light source and its application to a dual-laser plasma (DLP) photoabsorption experiment are described. The continuum emitting plasma was formed by focusing a 7 ps, 248 nm, 15 mJ laser pulse onto a number of selected targets known to be good XUV continuum emitters (Sm, W, Au and Pb), while the second absorbing plasma was produced by a 15 ns, 1064 nm, 300 mi pulse. The duration of the continuum emission for these plasmas has a mean value of similar to 150 ps, but depends on both the target material and the picosecond laser pulse energy. Using this picosecond DLP set-up we have been able to measure the photoabsorption spectrum of an actinide ion (thorium) for the first time.

Use of a random phase plate as a KrF laser beam homogenizer for thin film deposition applications

Fabrication of devices based on thin film structures deposited using the pulsed laser deposition technique relies on reproducibility and control of deposition rates over substrate areas as large as possible. Here we present an application of the random phase plate technique to smooth and homogenize the intensity distribution of a KrF laser footprint on the surface of a target which is to be ablated. It is demonstrated that intensity distributions over millimeter-sized spots on the target can be made insensitive to the typical changes that occur in the near-field intensity distribution of the ultraviolet output from a KrF laser. (C) 1999 American Institute of Physics. [S0034-6748(99)02504-6].

SATURATED AND NEAR-DIFFRACTION-LIMITED OPERATION OF AN XUV LASER AT 23.6 NM

Amplification of spontaneous emission (ASE) at 23.6 nm has been studied in a Ge plasma heated by a 1 TW infrared laser pulse. The exponent of the axial gain reached 21 in a geometry with Fresnel number less-than-or-equal-to 1. Two plasma columns of combined length up to 36 mm were used with an extreme ultraviolet mirror giving double-pass amplification. Saturation of the ASE output was observed. The beam divergence was about 8 x diffraction limited with a brightness estimated at 10(14) W cm-2 sr-1. The feedback from the mirror was significantly reduced probably by radiation damage from the plasma.

Angularly separated harmonic generation from intense laser interaction with blazed diffraction gratings

We made numerical simulations of the generation of narrowband beams of extreme ultraviolet radiation from intense laser interaction with a blazed grating surface. Strong fifth harmonic emission into its blazed diffraction order was observed as well as heavy suppression of the fundamental frequency with comparison to a typical harmonic spectrum from a flat target. The results demonstrate a new highly efficient method of generating near-monochromatic harmonics from the fundamental with minimal effect on the pulse duration. (C) 2011 Optical Society of America

Tunable Enhancement of High Harmonic Emission from Laser Solid Interactions

Coherent wake emission is a unique source of extreme ultraviolet radiation and has been recently shown to provide the basis for intense attosecond light. Here we present a novel scheme, supported by particle-in-cell simulations, demonstrating that enhancement and spectral control of the coherent wake emission signal can be achieved by modifying the interaction plasma density ramp. Significant tunable enhancement of harmonic emission is verified experimentally, with factors of > 50 in relative signal increase achieved in a narrow band of harmonics at the cutoff frequency.

Measurements of energy transport patterns in solid density laser plasma interactions at intensities of 5x10(20) W cm(-2)

K-alpha x-ray emission, extreme ultraviolet emission, and plasma imaging techniques have been used to diagnose energy transport patterns in copper foils ranging in thickness from 5 to 75 mu m for intensities up to 5x10(20) Wcm(-20). The K-alpha emission and shadowgrams both indicate a larger divergence angle than that reported in the literature at lower intensities [R. Stephens , Phys. Rev. E 69, 066414 (2004)]. Foils 5 mu m thick show triple-humped plasma expansion patterns at the back and front surfaces. Hybrid code modeling shows that this can be attributed to an increase in the mean energy of the fast electrons emitted at large radii, which only have sufficient energy to form a plasma in such thin targets.

Imaging of high harmonic radiation emitted during the interaction of a 20 TW laser with a solid target

We present images of the source of extreme ultraviolet (XUV) harmonic emission at a wavelength of 220 Angstrom from the interaction of a 20 TW, 1.053 mu m Nd:glass laser beam focused to intensities up to 4x10(18) W cm(-2) onto a solid target. From these measurements we determine an upper limit to the source size and brightness of the harmonic emission to show its efficacy as a novel source of short-pulse, coherent XUV radiation. We also demonstrate the empirical scaling of the harmonic generation efficiency with irradiance up to 10(19) W mu m(2) cm(-2), and extrapolate to estimate the possible source brightness at higher irradiances. These source brightnesses are compared to those available from an x-ray laser system. (C) 1997 American Institute of Physics.