Time-resolved volumetric measurement of fine-scale coherent structures in turbulence.

We present full volumetric (three-dimensional) time-resolved (+one-dimensional) measurements of the velocity field in a large water mixing tank, allowing us to assess spatial and temporal rotational energy (enstrophy) and turbulent energy dissipation intermittency. In agreement with previous studies, highly intermittent behavior is observed, with intense coherent flow structures clustering in the periphery of larger vortices. However, further to previous work the full volumetric measurements allow us to separate out the effects of advection from other effects, elucidating not only their topology but also the evolution of these intense events, through the local balance of stretching and diffusion. These findings contribute toward a better understanding of the intermittency phenomenon, which should pave the way for more accurate models of the small-scale motions based on an understanding of the underlying flow physics.

TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

The time-resolved flow within an unsteady ejector

The flow field within an unsteady ejector has been investigated using experimental and computational techniques. The experimental results show a peak thrust augmentation of 1.4; numerical simulation gives a value of 1.37. It is shown that the vortex ring dominates the flow field. At optimal thrust augmentation the vortex ring acts like a fluid piston accelerating the fluid inside the ejector. A model is proposed for the operation of unsteady ejectors, based on the vortex ring acting like a fluid piston. Control volume analysis is presented showing that mass entrainment is responsible for thrust augmentation. It is proposed that the spacing of successive vortex rings determines the mass entrainment and therefore thrust augmentation. The efficiency of unsteady ejectors was found to vary between 28% and 32% depending on the L/D ratio of the unsteady jet source. Copyright © 2008 by J H Heffer.

Time-resolved particle image velocimetry within the nozzle of a drop-on-demand printhead

Time-resolved particle image velocimetry (PIV) has been performed inside the nozzle of a commercially available inkjet print-head to obtain the time-dependent velocity waveform. A printhead with a single transparent nozzle 80 μm in orifice diameter was used to eject single droplets at a speed of 5 m/s. An optical microscope was used with an ultra-high-speed camera to capture the motion of particles suspended in a transparent liquid at the center of the nozzle and above the fluid meniscus at a rate of half a million frames per second. Time-resolved velocity fields were obtained from a fluid layer approximately 200 μm thick within the nozzle for a complete jetting cycle. A Lagrangian finite-element numerical model with experimental measurements as inputs was used to predict the meniscus movement. The model predictions showed good agreement with the experimental results. This work provides the first experimental verification of physical models and numerical simulations of flows within a drop-on-demand nozzle. © 2012 Society for Imaging Science and Technology.

Time resolved measurement of cold start hc concentration using the fast FID

Understanding mixture formation phenomena during the first few cycles of an engine cold start is extremely important for achieving the minimum engine-out emission levels at the time when the catalytic converter is not yet operational. Of special importance is the structure of the charge (film, droplets and vapour) which enters the cylinder during this time interval as well as its concentration profile. However, direct experimental studies of the fuel behaviour in the inlet port have so far been less than fully successful due to the brevity of the process and lack of a suitable experimental technique. We present measurements of the hydrocarbon (HC) concentration in the manifold and port of a production SI engine using the Fast Response Flame Ionisation Detector (FRFID). It has been widely reported in the past few years how the FRFID can be used to study the exhaust and in-cylinder HC concentrations with a time resolution of a few degrees of crank angle, and the device has contributed significantly to the understanding of unburned HC emissions. Using the FRFID in the inlet manifold is difficult because of the presence of liquid droplets, and the low and fluctuating pressure levels, which leads to significant changes in the response time of the instrument. However, using recently developed procedures to correct for the errors caused by these effects, the concentration at the sampling point can be reconstructed to align the FRFID signal with actual events in the engine. © 1996 Society of Automotive Engineers, Inc.

Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.