Sediment flux at selected coastal sites: proposed time series measurment by particle traps

Particle flux in the ocean reflects ongoing biological and geological processes operating under the influence of the local environment. Estimation of this particle flux through sediment trap deployment is constrained by sampler accuracy, particle preservation, and swimmer distortion. Interpretation of specific particle flux is further constrained by indeterminate particle dispersion and the absence of a clear understanding of the sedimentary consequences of ecosystem activity. Nevertheless, the continuous and integrative properties of the particle trap measure, along with the logistic advantage of a long-term moored sampler, provide a set of strategic advantages that appear analogous to those underlying conventional oceanographic survey programs. Emboldened by this perception, several stations along the coast of Southern California and Mexico have been targeted as coastal ocean flux sites (COFS).

Development of lobster traps: preliminary experiments with three new designs of rectangular, Australian pot and ink-well traps

Result of experimental lobster fishing with three new designs, namely rectangular, Australian pot and ink-well traps at Muttam, Kadiapatnam, Colachal, Enayam and Vizhinjam, south-west coast of India during 1979-80 are reported. Preliminary studies show that Australian pot and rectangular traps as more efficient to the ink-well type.

Extent of trial of improved designs of lobster traps

The mean extent of trial of an improved design of lobster trap by 45 fishermen was 26.46. The cost of local traps and number of seasons used were both significantly negatively associated with the extent of trials; its relationship with the annual catch by indigenous trap approached significance. These three variables accounted for 59% of the variance in the extent of trial.

Novel designs for Penning ion traps

A number of alternative designs are presented for Penning ion traps suitable for quantum information processing (QIP) applications with atomic ions. The first trap design is a simple array of long straight wires, which allows easy optical access. A prototype of this trap has been built to trap Ca+ and a simple electronic detection scheme has been employed to demonstrate the operation of the trap. Another trap design consists of a conducting plate with a hole in it situated above a continuous conducting plane. The final trap design is based on an array of pad electrodes. Although this trap design lacks the open geometry of the other traps described above, the pad design may prove useful in a hybrid scheme in which information processing and qubit storage take place in different types of trap. The behaviour of the pad traps is simulated numerically and techniques for moving ions rapidly between traps are discussed. Future experiments with these various designs are discussed. All of the designs lend themselves to the construction of multiple trap arrays, as required for scalable ion trap QIP.

The hidden traps in aquaculture

New investors in aquaculture probably know that they can make mistakes as they continue to operate their farms. Whether the mistakes happen immediately or not are risks they take as long as the mistakes are manageable and can easily be corrected. But many aquaculturists who have long been in the business say that there are costly mistakes that can wipe out one's investment. This paper is based on interviews with experienced aquaculturists and some popular articles from other aquaculture newsletters (Lindberg and Pryor on ways to lose money in aquaculture, Proceedings, Sustainable Aquaculture 95) and shares some insights regarding mistakes that may be hidden to new investors but obvious to experienced aquaculturists.

Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentration and energy level) and electron density in the channel in AlGaN/GaN heterostructures. This analysis was then correlated to dc and pulsed measurements of the transfer characteristics of a MISFET, where the gate bias was found to modulate either the channel density or the donor states. Traps-free and traps-frozen TCAD simulations were performed on an equivalent device to capture the donor behavior. A donor concentration of 1.14× 1013 ∼ cm-2 with an energy level located 0.2 eV below the conduction band edge gave the best fit to measurements. With the approach described here, we were able to analyze the region of the MISFET that corresponds to the drift region of a conventional HEMT. © 1980-2012 IEEE.

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.