2 μm solid-state laser mode-locked by single-layer graphene

We report a 2 μm ultrafast solid-state Tm: Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited ∼ 410 fs pulses, with a spectral width ∼ 11.1 nm at 2067 nm. The maximum average output power is 270 mW, at a pulse repetition frequency of 110 MHz. This is a convenient high-power transform-limited ultrafast laser at 2 μm for various applications, such as laser surgery and material processing. © 2013 American Institute of Physics.

Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation. © 2008 American Institute of Physics.

Quantum measurement of single electron state by a quantum point contact

Closely related to the quantum information processing in solid states, we study the quantum measurement of single electron state by a mesoscopic charge-sensitive detector, namely the quantum point contact (QPC). We find that the conventional Lindblad-type master equation is not appropriate for describing the underlying measurement dynamics. The treatment developed in this work properly accounts for the energy-exchange between the detector and the measured system, and its role on the detailed-balance relation. A valid description for the QPC measurement dynamics is provided which may have impact on the study of quantum measurement and quantum feedback control in solid states.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Solid-state qubit measurement with single electron transistors

In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved.

Quantum Measurement of Single Electron State by a Mesoscopic Detector

A realistic measurement setup for a system such system measured by a mesoscopie detector,is theoretically as a charged two-state （qubit） or multi-state quantum studied. To properly describe the measurement-induced back-action,a detailed-balance preserved quantum master equation treatment is developed. The established framework is applicable for arbitrary voltages and temperatures.

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

Single nucleon potential and effective mass with ground state correlations in hot nuclear matter

In the framework of the finite temperature Brueckner-Hartree-Fock approach including the contribution of the microscopic three-body force, the single nuclear potential and the nucleon effective mass in hot nuclear matter at various temperatures and densities have been calculated by using the hole-line expansion for mass operator, and the effects of the three-body forces and the ground state correlations on the single nucleon potential have been investigated. It is shown that both the ground state correlations and the three-body force affect considerably the density and temperature dependence of the single nucleon potential. The rearrangement correction in the single nucleon potential is repulsive and it reduces remarkably the attraction of the single nucleon potential in the low-momentum region. The rearrangement contribution due to the ground state correlations becomes smaller as the temperature rises up and becomes larger as the density increases. The effect of the three-body force on the ground state correlations is to reduce the contribution of rearrangement. At high densities, the single nucleon potential containing both the rearrangement correction and the contribution of the three-body force becomes more repulsive as the temperature increases.

The single vortex in the FFLO state

In this Letter, we study the generalized Ginzburg-Landau (GL) functional near the tricritical temperature, and obtain the vortex solution of the FFLO state. Furthermore, we investigate the structure of the vortex and find that the vortices shrink when the Zeeman effect is weaken or temperature is lowered. (C) 2010 Elsevier B.V. All rights reserved.

Study on the structure change and oxygen vacation shift for Ce1-xSmxO2-y solid solution

A series of solid electrolytes Ce1-xSmxO2-y (x=0similar to0.6) were prepared by sol-gel method. XRD measurement showed that single-phase solid solution was formed in all investigated ranges at 160 degreesC, which is a significantly lower synthesis temperature compared to traditional solid state reaction. High temperature X-ray, ESR, and Raman scattering were used to characterize the samples. ESR measurement showed that ESR with sample irradiated by high-energy particle is an effective way to study the defect structure. These changes in the Raman spectrum are attributed to O vacancies, which are introduced into the lattice when tetravalent Ce4+ is substituted by trivalent Sm3+.

Study of color centers and trace oxygen in KMgF3 : Eu single crystal

Using the Bridgeman-Stockbarger method, the KMgF3:EU2+ single crystal was grown. The color centers in unirradiated KMgF3:Eu crystal were studied. By thermal annealing, we confirmed the 422-nm emission resulted from color centers and oxygen centers, and we proved the energy transfer from EU2+ to color centers. From spectra, the relative oxygen content in crystal was calculated, and the relationships of oxygen displacing fluorine were studied.