Valutazione dell'attivita prebiotica di equiseto e residui della lavorazione degli agrumi

Obiettivo di questa sperimentazione è stata la valutazione in vitro dell’attività prebiotica di un sottoprodotto dell’industria alimentare, il pastazzo di agrumi, ed una pianta officinale largamente diffusa in natura, l’equiseto, nei confronti di alcuni batteri lattici isolati da feci di origine umana. Come riferimento si sono utilizzati due composti a riconosciuta attività prebiotica, l’inulina ed i frutto-oligosaccaridi (FOS), e ceppi di Bifidobacterium isolati da un preparato commerciale (Bifiselle®, Bromatech). I ceppi batterici utilizzati per tale prova sono stati isolati da campioni fecali di individui caratterizzati da differenti regimi alimentari – onnivoro, vegano od ovo-latto vegetariano -nell’ambito delle attività relative al progetto PRIN 2010-2011 “Microrganismi negli alimenti e nell'uomo: studio del microbiota e del relativo metaboloma in funzione della dieta onnivora, vegetariana o vegana (Gut4Diet)”. I risultati ottenuti hanno messo in evidenza come alcuni dei ceppi studiati posseggano una buona capacità di crescita in terreni di coltura con sottoprodotti agrumari ed equiseto come fonti di carbonio. Tramite analisi delle molecole volatili si sono determinate più di 60 molecole appartenenti principalmente alle classi degli acidi organici e loro esteri, alcoli, aldeidi, chetoni e pirazine. Tra queste vi sono alcuni esteri di acidi grassi a corta catena che si sono accumulati soprattutto nei sistemi addizionati di equiseto, FOS ed inulina. E’ noto che gli acidi grassi a corta catena sono prodotti dalla flora batterica intestinale durante la fermentazione di polisaccaridi non digeribili ed esplicano un ruolo protettivo nei confronti di differenti patologie.

Fabrication and characterization of polyterpenol as an insulating layer and incorporated organic field effect transistor

A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the polyterpenol interlayer in the OFET shifted the threshold voltage significantly; + 20 V to -3 V. The presence of trapped charge was not observed in the polyterpenol interlayer. This assisted in the improvement of effective mobility from 0.012 to 0.021 cm 2/Vs. The switching property of the polyterpenol based OFET was also improved; 107 compared to 104. The results showed that the non-synthetic polyterpenol polymer film is a promising candidate of insulators in electronic devices.

Estimation Of Charge Transport Parameters And Equivalent Circuit For Poly Alkyl Thiophene Field-Effect Transistors

The small signal ac response is measured across the source-drain terminals of organic field-effect transistors (OFET) under dc bias to obtain the equivalent circuit parameters of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) and poly(3-hexyl thiophene) (P3HT) based devices. The numerically simulated response based on these parameters is in good agreement with the experimental data for PBTTT-FET except at low frequencies, while the P3HT-FET data show significant deviations. This indicates that the interface with the metal electrode is rather complex for the latter, involving additional circuit elements arising from contact impedance or charge injection processes. Such an investigation can help in identifying the operational bottlenecks and to improve the performance of OFETs.

Synthesis and Self-Assembly of Donor-Acceptor-Donor Based Oligothiophenes and Their Optoelectronic Properties

In this work, the synthesis of an oligothiophene having a donor acceptor donor (D-A-D) chromophore with hydrogen bonding groups is described. The D-A-D molecule was demonstrated to self-organize via intermolecular H-bonding between barbituric acid units. Interactions between the oligothiophene subunits were also found to be important, affording nanoribbons that could be observed by atomic force and transmission electron microscopy. The applicability of the oligothiophene for organic electronic applications was investigated by fabricating organic field-effect transistors (OFETs) and organic photovoltaic devices. The OFET measurements yielded p-type mobility of 7 x 10(-7) cm(2)/(Vs), and when blended with C(60)-PCBM, the photovoltaic efficiency was observed to be 0.18%.

Controlling Conformations of Diketopyrrolopyrrole-Based Conjugated Polymers: Role of Torsional Angle

Transport of charge carriers through conjugated polymers is strongly influenced by the presence and distribution of structural disorders. In the present work, structural defects caused by the presence of torsional.. angle were investigated in a diketopyrrolopyrrole (DPP)-based conjugated polymer. Two new copolymers of DPP were synthesized with varying torsional angles to trace the role of structural disorder. The optical properties of these copolymers in solution and thin film reveal the strong influence of torsional angle on their photophysical properties. A strong influence was observed on carrier transport properties of polymers in organic field-effect transistors (OFET) device geometry. The polymers based on phenyl DPP with higher torsional angle (PPTDPP-OD-TEG) resulted in high threshold voltage with less charge carrier mobility as compared to the polymer based on thiophene DPP (2DPP-OD-TEG) bearing a lower torsional angle. Carrier mobility and the molecular orientation of the conjugated polymers were correlated on the basis of grazing incidence X-ray scattering measurements showing the strong role of torsional angle introduced in the form of structural disorder. The results presented in this Article provide a deep insight into the sensitivity of structural disorder and its impact on the device performance of DPP-based conjugated polymers.

Selenium in Diketopyrrolopyrrole-based Polymers: Influence on Electronic Properties and Charge Carrier Mobilities

Diketopyrrolopyrrole (DPP)-based pi-conjugated copolymers with thiophene have exceptionally high electron mobilities. This paper investigates electronic properties and charge carrier mobilities of selenophene containing analogues. Two new copolymers, with alternating thiophene DPP (TDPP) and selenophene DPP (SeDPP) units, were synthesized. Two side-chains, hexyl (Hex) and triethylene glycol (TEG) were employed, yielding polymers designated as PTDPPSeDPP-Hex and PTDPPSeDPP-TEG. Selenophene systems have smaller band gaps, with concomitant enhancement of the stability of the reduced state. For both polymers, ambipolar mobilities were observed in organic field-effect transistors (OFET). Grazing incidence X-ray diffraction (GIXD) data indicates preferential edge-on orientation of PTDPPSeDPP-TEG, which leads to superior charge transport properties of the TEG substituted polymer, as compared to its Hex analogue. Time-dependent-density functional theory (TDDFT) calculations corroborate the decrease in the optical band gap with the inclusion of selenophene. Ambipolar charge transport is rationalized by exceptionally wide conduction bands. Delta SCF calculations confirm the larger electron affinity, and therefore the greater stability, of the reduced form of the selenophene-containing DPP polymer in presence of chloroform.

Herringbone to cofacial solid state packing via H-bonding in diketopyrrolopyrrole (DPP) based molecular crystals: influence on charge transport

Themono-alkylation of DPP derivatives leads to cofacial pi-pi stacking via H-bonding unlike their di-alkylated counterparts, which exhibit a classical herringbone packing pattern. Single crystal organic field-effect transistor (OFET) measurements reveal a significant enhancement of charge carrier mobility for mono-hexyl DPP derivatives.

Effect of Chalcogens on Electronic and Photophysical Properties of Vinylene-Based Diketopyrrolopyrrole Copolymers

Three vinylene linked diketopyrrolopyrrole based donor acceptor (D-A) copolymers have been synthesized with phenyl, thienyl, and selenyl units as donors. Optical and electronic properties were investigated with UV-vis absorption spectroscopy, cyclic voltammetry, near edge X-ray absorption spectroscopy, organic field effect transistor (OFET) measurements, and density functional theory (DFT) calculations. Optical and electrochemical band gaps decrease in the order phenyl, thienyl, and selenyl. Only phenyl-based polymers are nonplanar, but the main contributor to the larger band gap is electronic, not structural effects. Thienyl and selenyl polymers exhibit ambipolar charge transport but with higher hole than electron mobility. Experimental and theoretical results predict the selenyl system to have the best transport properties, but OFET measurements prove the thienyl system to be superior with p-channel mobility as high as 0.1 cm(2) V-1 s(-1).

Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (Ion/Ioff ratio: 1 × 103; mobility: 0.071 cm2 V-1 s-1). © 2010 IOP Publishing Ltd.

Progresses in organic field effect transistors and molecular electronics

In the past years, organic materials have been extensively investigated as an electronic material for organic field effect transistors (OFETs). In this paper, we briefly summarize the current status of organic field effect transistors including materials design, device physics, molecular electronics and the application of carbon nanotubes in molecular electronics. Future prospects and investigations required to improve the OFET performance are also involved.

The first liquid crystalline phthalocyanine derivative capable of edge-on alignment for solution processed organic thin-film transistors

Tetraoctyl-substituted vanadyl phthalocyanine (OVPc4C8) as a new NIR-absorbing discotic liquid crystalline material can form highly ordered thin films with edge-on alignment of the molecules and molecular packing mode identical to that in the phase II of OVPc for solution processed OTFTs with mobility up to 0.017 cm(2) V-1 s(-1).

Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine

The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (DeltaV(T)) of OFETs without changes of field-effect mobility mu(EF) and sub-threshold slope (DeltaS). The DeltaV(T) is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution.

Organische Magnetooptoelektronik

Im Rahmen der Organischen Optoelektronik wird der Weg vom Molekül zum Bauteil als Wertschöpfungskette verstanden, deren Kernziele wissenschaftlicher Erkenntnisfortschritt und Produktanwendungen sind. Eine besonders vielversprechende Möglichkeit diese Entwicklung auch in Zukunft erfolgreich und innovativ fortführen zu können, eröffnet sich durch das Einbeziehen magnetosensitiver Prozesse. Spinzustände werden als zusätzliche Regelgröße verstanden, die es erlauben, optoelektronische Abläufe zu optimieren und neuartige Funktionen zu generieren. Dieses Konzept integriert die Vorteile sowie das Potential der Spintronik in die Organische Optoelektronik und hat sich zu einem zukunftsweisenden, neuartigen Forschungsfeld entwickelt. Es wird als Organische Magnetooptoelektronik bezeichnet und beschäftigt sich mit der Wirkung magnetischer Felder auf optisch und elektronisch anregbare Zustände in organischen Halbleitern. Mit den durchgeführten Forschungsaktivitäten ist es gelungen, Organische Feldeffekt-Transistoren (OFETs) als neuartige Plattform zur Untersuchung magnetooptoelektronischer Phänomene in niedermolekularen Halbleitern zu etablieren. Der gezielte Einsatz geeigneter Funktionsmaterialien ermöglicht die Herstellung magnetoresistiver 3-Kontakt-Bauteile, die das Wissenschaftsfeld des Organischen Magnetowiderstands entscheidend erweitern und dessen Anwendungsspektrum vergrößern. Dabei offenbaren OFETs auf Basis der Lochtransportmaterialien Pentacen und TIPS-Pentacen unter Belichtung magnetosensitives Verhalten, das erlaubt den Organischen Magnetowiderstand optisch ein- und auszuschalten. Auch ohne zusätzliche Belichtung können Magnetfeldeffekte erzielt werden, wenn spezielle Donor- und Akzeptor-Komponenten eingesetzt werden. Aus der ionisierenden Wechselwirkung zwischen Spiro-TTB (Elektronendonor) und HAT-CN (Elektronenakzeptor) resultiert eine so ausgeprägte Magnetosensitivität, dass bereits ultrakleine Magnetfelder den Ladungstransport signifikant beeinflussen. Zudem ist das magnetoresistive Verhalten empfindlich von den Spannungsbedingungen abhängig und das MR-Vorzeichen kann durch die Drainspannung umgepolt werden. Donor- und Akzeptor-Syteme mit nichtionisierender Wechselwirkung erweisen sich ebenfalls als geeignet für die Herstellung magnooptoelektronisch aktiver Bauteile. Sowohl in Spiro-DPPFPy als auch in Spiro-TAD/Spiro-PFPy OFETs zeigen sich im Dunkeln positiver und unter Belichtung negativer Magnetowiderstand. Diese gegensätzlichen MR-Komponenten lassen sich mit der Belichtungsintensität sowie der Magnetfeldstärke systematisch modulieren und es ist das magnetooptoelektronische Schalten des MR-Vorzeichens möglich. Unterschiedliche MR-Komponenten treten auch in ambipolaren Spiro-DPASP-tBu-Phenyl OFETs auf. Deren Drainstrom lässt sich in lochdominierte, elektronendominierte sowie ambipolare Bereiche gliedern, wobei bei unipolarem Ladungstransport positiver und bei ambipolarem negativer Magnetowiderstand vorherrscht. Mit der Betriebsspannung kann zwischen den jeweiligen Transportbereichen und damit dem MR-Vorzeichen geschaltet werden. All diese Facetten des Organischen Magnetowiderstands sind nicht nur Ausdruck des weitreichenden physikalischen Hintergrunds, sondern eröffnen eine vielversprechende Perspektive zur Realisierung multifunktionaler, magnetooptoelektronischer 3-Kontakt-Bauteile auf Basis organischer Halbleiter. Neben dem Nachweis neuartiger magnetoresistiver Phänomene in Organischen Feldeffekt-Transistoren beinhaltet dieses Forschungsprojekt das Ziel, zur Entschlüsselung der zugrundeliegenden Elementarprozesse beizutragen. Dabei ergibt sich folgendes Resümee für die Interpretation der erzielten Magnetfeldeffekte: Unter unipolaren Transportbedingungen wird der Magnetowiderstand durch spinsensitive Bipolaronenbildung versursacht. Im Rahmen dieser Arbeit tragen Bipolaronen signifikant zum Drainstrom bei, wenn im Leitungskanal Gegenladungen vorhanden sind oder dieser aus chemischen Einheiten mit hoher Elektronenaffinitätsdifferenz aufgebaut ist. Weitere MR-Komponenten werden erschlossen, wenn im Transportvolumen simultan positive und negative Ladungsträger vorhanden sind. Deren Interaktion resultiert in Elektron-Loch Paaren, die über ein magnetosensitives Reaktionsverhalten verfügen. Sie werden entweder über Belichtung der OFET-Struktur erzeugt oder bilden sich während des ambipolaren Ladungstransports.

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.