High speed nonlinear optical components for next-generation optical communications

Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

Raman spectroscopy analysis of structural photoinduced changes in GeS(2) + Ga(2)O(3) thin films

Photoexpansion and photobleaching effects have been observed in amorphous GeS(2) + Ga(2)O(3) (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds` breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.

Experimental observation of infrared spectral enlargement in As 2S3 suspended core microstructured fiber

The development of chalcogenide glasses fibers for application in the infrared wavelength region between 1 and 10 μm is a big opportunity. More particularly, the possibility to generate efficient non linear effects above 2 μm is a real challenge. We present in this work the elaboration and optical characterizations of suspended core microstructured optical fibers elaborated from the As2S3 chalcogenide glass. As an alternative to the stack and draw process a mechanical machining has been used to the elaboration of the preforms. The drawing of these preforms into fibers allows reaching a suspended core geometry, in which a 2.5 μm diameter core is linked to the fiber clad region by three supporting struts. The zero dispersion wavelength is thus shifted towards 2 μm. At 1.55 μm our fibers exhibit a dispersion around -250 ps/nm/km. Their background level of losses is below 0,5 dB/m. By pumping them at 1.55 μm with a ps source, we observe self phase modulation as well as Raman generation. Finally a strong spectral enlargement is obtained with an average output power of - 5 dbm. © 2010 SPIE.

Vidros óxidos contendo átomos pesados para aplicações em óptica não linear e fotônica na região do infravermelho

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Estudo de composições vítreas no sistema ternário Ga-Ge-Te para o armazenamento de dados

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Développement de fibres optiques composites pour la génération du supercontinuum dans l’infrarouge

Les sources laser à large bande possédant les caractéristiques requises pour émettre sur la plage spectrale correspondant à la seconde fenêtre de transmission atmosphérique (3 à 5 μm) exercent un attrait considérable pour divers domaines tels que la télédétection de polluants atmosphériques et les contremesures infrarouges. Les supercontinua générés à l’intérieur de fibres optiques représentent une option intéressante pour réaliser ce type de sources laser. En effet, ils possèdent une intensité élevée, un large contenu spectral, une excellente directionnalité de faisceau, ainsi qu’un bon potentiel pour constituer des sources lumineuses compactes et robustes. Toutefois, la génération d’un tel supercontinuum implique certains défis à relever sur le plan de la conception des fibres optiques employées. En fait, ces fibres optiques doivent présenter de faibles pertes de propagation sur la plage spectrale de 3 à 5 μm, posséder un paramètre de non-linéarité élevé et permettre le pompage en régime anomal de dispersion à des longueurs d’onde pour lesquelles des sources laser compactes sont offertes commercialement. En matière de robustesse, ces fibres doivent également démontrer de bonnes propriétés mécaniques ainsi qu’une stabilité chimique appropriée vis-à-vis de la corrosion causée par l’humidité. Dans le cadre de cette thèse, un nouveau type de fibres composites à saut d’indice fortement contrasté a été développé pour atteindre ces objectifs de génération de supercontinuum. Ce type de fibres combine respectivement un verre de tellurite et un verre de germanate pour son coeur et sa gaine permettant ainsi d’atteindre une différence d’indice de réfraction d’environ 0.3 entre ces deux dernières structures. Grâce à cet important saut d’indice, ces fibres peuvent fortement confiner les modes optiques à l’intérieur de leur coeur, ce qui leur donne la possibilité d’atteindre un niveau élevé de non-linéarité et d’optimiser leurs caractéristiques de dispersion chromatique pour la génération du supercontinuum. D’autre part, leur section transversale toute solide leur confère aussi une meilleure stabilité environnementale comparativement à celle démontrée par les fibres optiques microstructurées à base de verres d’oxydes de métaux lourds, de verres de chalcogénure et de verres fluorés. Toutefois, leur fabrication nécessite l’appariement de verres dont les propriétés thermomécaniques concordent suffisamment ensemble pour permettre leur fibrage. Les travaux effectués ici démontrent la production de fibres optiques composites et leur potentiel pour la génération du supercontinuum dans l’infrarouge moyen.

High-pressure studies on Ge-Te glasses. Evidence for a critical composition in IV-VI chalcogenide glassy systems

The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature and pressure. Under high pressure, all the glasses were found to undergo sharp discontinuous transitions from glassy semiconductors to crystalline metal. Several of the observed properties such as the transition pressure, conductivity activation energy and pre-exponential factor, exhibit anomalous trends at a composition x = 20. These results suggest that the x = 20 composition in the Ge-Te system should possess salient structural features. A model based on the unusual stability of structural units is proposed for explaining the anomaly at 20 at.% Ge concentration.

Composition tunable memory and threshold switching in Al20As xTe80− x semiconducting glasses

I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

Study of the glass transition temperature of as-s glasses for the fabrication of chalcogenide optical fibers

Values of glass transition temperature (Tg) and of linear expansion coefficient (α) for Asx S100-x glasses were measured in the range of concentrations 35 × 42. Because of the importance of the glass formation region 35 × 42 for the optical fibers elaboration, special attention was made on high-pure Asx S100-x glasses. For the glass in the range of 35 × 38, we measure Tg with the interval of x equal to 1 at.% of arsenic. We also measured the Tg values with the interval of x equal to 0.5 at.% of As. We obtained nonlinear behavior of Tg, reflecting the change in molecular composition of As-S glass in the glass composition range studied. The control of such parameters is important to produce optical fibers with specific numerical aperture. © 2013 The American Ceramic Society and Wiley Periodicals, Inc.

Thermal and electrical switching studies on Ge20Se80-xBix (1 <= x <= 13) ternary chalcogenide glassy system

Alternating Differential Scanning Calorimetric (ADSC) and electrical switching studies have been undertaken on Ge20Se80-xBix glasses (1 <= x <= 13), to understand the effect of topological thresholds on thermal properties and electrical switching behavior. It is found that the compositional dependence of glass transition temperature (Tg), crystallization temperature (T-c1) and thermal stability (AT) of Ge20Se80-xBix glasses show anomalies at a composition x= 5, the rigidity percolation/stiffness threshold of the system. Further, unusual variations are also observed in different thermal properties, such as T-g, T-c1, Delta T, Delta C-p and Delta H-NR, at the composition x= 10, which indicates the occurrence of chemical threshold in these glasses at this composition. Electrical switching studies indicate that Ge20Se8o_RBig glasses with 5 11 exhibit threshold switching behavior and those with x = 12 and 13 show memory switching. A sharp decrease has been noticed in the switching voltages with bismuth concentration, which is due to the more metallic nature of bismuth and the presence of Bi+ ions. Further, a saturation is seen in the decrease in V-T around x = 6, which is related to bismuth phase percolation at higher concentrations of Bi. (C) 2010 Elsevier B.V. All rights reserved.

Compositional dependence of crystallization of As-Te glasses

Thermal crystallization studies have been carried out on bulk, semiconducting AsxTe100−x glasses of different compositions using Differential Scanning Caloritmery. AsxTe100−x glasses with x < 40, are found to exhibit one glass transition and one crystallization. On the other hand, glasses with composition 40 less-than-or-equals, slantxless-than-or-equals, slant 50 show one glass transition and two crystallization reactions. It has been found that in glasses with x greater-or-equal, slanted 40, the two crystallization reactions progressively merge with an increase in arsenic concentration. Consequently AsxTe100−x glasses with x greater-or-equal, slanted 50 show only one crystallization. The composition dependence of crystallization temperatures and activation energies for crystallization estimated by Kissinger's method, show marked deviations at a composition x = 40. These observations can be explained in terms of the changes in the local structure of the material with composition.

Electrical switching and short-range order in As-Te glasses

The local structural order in chalcogenide network glasses is known to change markedly at two critical compositions, namely, the percolation and chemical thresholds. In the AsxTe100-x glassy system, both the thresholds coincide at the composition x = 40 (40 at. % of arsenic). It is demonstrated that the electrical switching fields of As-Te glasses exhibit a distinct change at this composition.

Photo-thermal modifications in ultrafast laser inscribed chalcogenide glass waveguides

We report here, a finite difference thermal diffusion (FDTD) model for controlling the cross-section and the guiding nature of the buried channel waveguides fabricated on GeGaS bulk glasses using the direct laser writing technique. Optimization of the laser parameters for guiding at wavelength 1550 nm is done experimentally and compared with the theoretical values estimated by FDTD model. The mode field diameter (MFD) between 5.294 mu m and 24.706 mu m were attained by suitable selection of writing speed (1mm/s to 4 mm/s) and pulse energy (623 nJ to 806 nJ) of the laser at a fixed repletion rate of 100 kHz. Transition from single-mode to multi-mode waveguide is observed at pulse energy 806nJ as a consequence of heat accumulation. The thermal diffusion model fits well for single-mode waveguides with the exception of multi-mode waveguides.

Photosensitivity study of GeS2 chalcogenide glass under femtosecond laser pulses irradiation

The present study discusses the photosensitivity of GeS2 chalcogenide glass in response to irradiation with femtosecond pulses at 1047 nm. Bulk GeS2 glasses are prepared by conventional melt quenching technique and the amorphous nature of the glass is confirmed using X-ray diffraction. Ultrafast laser inscription technique is used to fabricate the straight channel waveguides in the glass. Single scan and multi scan waveguides are inscribed in GeS2 glasses of length 0.65 cm using a master oscillator power amplifier Yb doped fiber laser (IMRA mu jewel D400) with different pulse energy and translation speed. Diameters of the inscribed waveguides are measured and its dependence on the inscription parameters such as translation speed and pulse energy is studied. Butt coupling method is used to characterize the loss measurement of the inscribed optical waveguides. The mode field image of the waveguides is captured using CCD camera and compared with the mode field image of a standard SMF-28 fibers.

Optical responses of ZnSe quantum dots in silica gel glasses

The characteristic features of the absorption and photoluminescence spectra of ZnSe quantum dots (QDs) inside a silica matrix derived from a sol-gel method were studied at room temperature. Compared with the bulk materials, the absorption edges of ZnSe QDs in silica gel glass were shifted to higher energies and the spectra exhibited the discrete excitonic features due to the quantum confinement effects. Besides the band-edge emission, photoluminescence at ultraviolet excitation also showed the emissions related to the higher excitonic states. (C) 2004 Elsevier B.V. All rights reserved.