540 resultados para polyelectrolyte multilayers


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This paper presents models to describe the dislocation dynamics of strain relaxation in an epitaxial uniform layer, epitaxial multilayers and graded composition buffers. A set of new evolution equations for nucleation rate and annihilation rate of threading dislocations is developed. The dislocation interactions are incorporated into the kinetics process by introducing a resistance term, which depends only on plastic strain. Both threading dislocation nucleation and threading dislocation annihilation are characterized. The new evolution equations combined with other evolution equations for the plastic strain rate, the mean velocity and the dislocation density rate of the threading dislocations are tested on GexSi1-x/Si(100) heterostructures, including epitaxial multilayers and graded composition buffers. It is shown that the evolution equations successfully predict a wide range of experimental results of strain relaxation and threading dislocation evolution in the materials system. Meanwhile, the simulation results clearly signify that the threading dislocation annihilation plays a vital role in the reduction of threading dislocation density.

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Nanostructured FeNi-based multilayers are very suitable for use as magnetic sensors using the giant magneto-impedance effect. New fields of application can be opened with these materials deposited onto flexible substrates. In this work, we compare the performance of samples prepared onto a rigid glass substrate and onto a cyclo olefin copolymer flexible one. Although a significant reduction of the field sensitivity is found due to the increased effect of the stresses generated during preparation, the results are still satisfactory for use as magnetic field sensors in special applications. Moreover, we take advantage of the flexible nature of the substrate to evaluate the pressure dependence of the giant magneto-impedance effect. Sensitivities up to 1 Omega/Pa are found for pressures in the range of 0 to 1 Pa, demostrating the suitability of these nanostructured materials deposited onto flexible substrates to build sensitive pressure sensors.

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unavailable<br>H. Sun's e-mail address is shy780327@siom.ac.cn.

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We report the single-shot damage thresholds of MgF2/ZnS onmidirectional reflector for laser pulse durations from 50 A to 900 fs. A coupled dynamic model is applied to study the damage mechanisms, in which we consider not only the electronic excitation of the material, but also the influence of this excitation-induced changes in the complex refractive index of material on the laser pulse itself. The results indicate that this feedback effect plays a very important role during the damage of material. Based on this model, we calculate the threshold fluences and the time-resolved excitation process of the multiplayer. The theoretical calculations agree well with our experimental results. (c) 2005 Elsevier B.V. All rights reserved.

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Part I. Novel composite polyelectrolyte materials were developed that exhibit desirable charge propagation and ion-retention properties. The morphology of electrode coatings cast from these materials was shown to be more important for its electrochemical behavior than its chemical composition.

Part II. The Wilhelmy plate technique for measuring dynamic surface tension was extended to electrified liquid-liquid interphases. The dynamical response of the aqueous NaF-mercury electrified interphase was examined by concomitant measurement of surface tension, current, and applied electrostatic potential. Observations of the surface tension response to linear sweep voltammetry and to step function perturbations in the applied electrostatic potential (e.g., chronotensiometry) provided strong evidence that relaxation processes proceed for time-periods that are at least an order of magnitude longer than the time periods necessary to establish diffusion equilibrium. The dynamical response of the surface tension is analyzed within the context of non-equilibrium thermodynamics and a kinetic model that requires three simultaneous first order processes.

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The effects of repeating thickness periods on stress are studied in ZrO2/SiO2 multilayers deposited by electron-beam evaporation on BK7 glass and fused-silica substrates. The results show that the residual stress is compressive and decreases with an increase of the periods of repeating thickness in the ZrO2/SiO2 multilayers. At the same time, the residual stress in multilayers deposited on BK7 glass is less than that of samples deposited on fused silica. The variation of the microstructure examined by x-ray diffraction shows that microscopic deformation does not correspond to macroscopic stress, which may be due to variation of the interface stress. (c) 2005 Optical Society of America.

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A study on the layer structure of W/C multilayers deposited by magnetron sputtering is reported. In the study, soft x-ray resonant reflectivity and hard x-ray grazing incidence reflectivity of the W/C multilayers were measured. The imperfections at the interface such as interdiffusion and formation of compounds were dealt with by two methods. On analyzing the experimental results, we found that the incorporation of an interlayer was a more suitable method than the traditional statistical method to describe the layer structure of a W/C system we fabricated. The optical constants of each layer at a wavelength of 4.48 nm were also obtained from the analysis. Copyright (C) 2008 John Wiley & Sons, Ltd.

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Technological progress is determined, to a great extent, by developments in material science. Breakthroughs can happen when a new type of material or new combinations of known materials with different dimensionality and functionality are created. Multilayered structures, being planar or concentric, are now emerging as major players at the forefront of research. Raman spectroscopy is a well-established characterization technique for carbon nanomaterials and is being developed for layered materials. In this issue of ACS Nano, Hirschmann et al. investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a wealth of information can be derived about these complex structures. The next challenge is to tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged "on demand" to achieve targeted properties.

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Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.

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Size self-scaling effect in stacked InAs/In0.52Al0.48As nanowires on InP substrates is revealed, i.e., the base width and height of the InAs nanowires have clear proportional dependence on thickness of the InAlAs spacer layer used in different samples. The photoluminescence wavelength from different samples, which varies between 1.3 and 1.9 mum, is also found closely correlated to the size self-scaling effect. This phenomenon can be well explained in the context of formation mechanism and growth features of the InAs/InAlAs nanowire arrays. The finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures. (C) 2004 American Institute of Physics.

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A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45 mu m is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.