Near-infrared nonlinearity of a multicomponent tellurium oxide glass at 800 and 1,064 nm

We report on the nonlinear (NL) optical properties of glassy TeO2-GeO2-K2O-Bi2O3 at lambda = 800 nm and lambda = 1,064 nm. Using the Kerr gate technique with a laser delivering 150 fs pulses at 800 nm, we demonstrated the fast NL response of the samples. The modulus of the NL refractive index, n (2), at 800 nm was similar to 10(-15) cm(2)/W. The Z-scan technique was used to determine n (2) a parts per thousand +10(-15) cm(2)/W, at 1,064 nm with pulses of 17 ps. The two-photon absorption coefficient, alpha (2), was smaller than the minimum that we can measure (< 0.003 cm/GW). The figure of merit n (2)/alpha (2) lambda was calculated and indicates that this glass composition has large potential to be used for all-optical switching.

Picosecond nonlinearity of GeO2-Bi2O3-PbO-TiO2 glasses at 532 and 1,064 nm

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Femtosecond third-order nonlinear spectra of lead-germanium oxide glasses containing silver nanoparticles

This work reports on the spectral dependence of both nonlinear refraction and absorption in lead-germanium oxide glasses (PbO-GeO2) containing silver nanoparticles. We have found that this material is suitable for all-optical switching at telecom wavelengths but at the visible range it behaves either as a saturable absorber or as an optical limiter. (C) 2012 Optical Society of America

Synthese und Charakterisierung von Modellen für Photoschalter und elektronische Ventile

Gegenstand der vorliegenden Arbeit war die Synthese von organischen Photoschalter-Modellen auf der Basis von mesoionischen Pyrimidinium-olaten und Bis(thienylperfluorocyclopentenen), sowie die Darstellung substituierter Biphenyl-Biradikale als Modelle für Ventil-Systeme im Sinne eines neuen Schalter-Ventil-Konzeptes.Aufbauend auf meiner Arbeit über mesoionische Pyrimidinium-olate wurde ein henkelverbrücktes Ansa-Mesoion mit einem 16-gliedrigen Makrocyclus, sowie drei mehrcyclische mesoionische Systeme synthetisiert und auf ihr Schaltverhalten hin untersucht. Das Ansa-Mesoion stellt ein erstes einfaches Modell für Schalter-Ventil-Konjugate dar. Zur Darstellung der photochromen Bis(thienylethene) wurden die aus der Literatur bekannten Syntheserouten nach Irie als auch nach Feringa auf neue Strukturen angewandt und die Schalteigenschaften der Bis(thienylethene) optisch nachgewiesen. Die Anordnung der reaktiven Endgruppen in den synthetisierten Verbindungen schafft ideale Voraussetzungen für eine große konformelle Änderung, welche im Schalter-Ventil-Konjugat erwünscht ist. Durch vielfaches Durchlaufen des Schaltprozesses (> 100 Cyclen) konnte die hohe Reversibilität des Schaltvorganges belegt werden.Als Ventilmodelle wurden mit stabilen Nitroxidradikalen substituierte Biphenyle verwendet, deren primärer konformativer Freiheitsgrad durch die Drehung um die Phenyl-Phenyl-Einfachbindung gegeben ist. Experimentelle ESR-Daten und deren Vergleich mit Spektrensimulationen bestätigten die Abhängigkeit der Austauschwechselwirkung J zwischen den Radikalen vom Biphenyldiederwinkel.

Tailoring molecular weight of the conjugated model polymer MEH-PPV and its structure-property relations

In der vorliegenden Arbeit wurden Struktur-Eigenschaftsbeziehungen des konjugierten Modell-Polymers MEH-PPV untersucht. Dazu wurde Fällungs-fraktionierung eingesetzt, um MEH-PPV mit unterschiedlichem Molekulargewicht (Mw) zu erhalten, insbesondere MEH-PPV mit niedrigem Mw, da dieses für optische Wellenleiterbauelemente optimal geeignet ist Wir konnten feststellen, dass die Präparation einer ausreichenden Menge von MEH-PPV mit niedrigem Mw und geringer Mw-Verteilung wesentlich von der geeigneten Wahl des Lösungsmittels und der Temperatur während der Zugabe des Fällungsmittels abhängt. Alternativ dazu wurden UV-induzierte Kettenspaltungseffekte untersucht. Wir folgern aus dem Vergleich beider Vorgehensweisen, dass die Fällungsfraktionierung verglichen mit der UV-Behandlung besser geeignet ist zur Herstellung von MEH-PPV mit spezifischem Mw, da das UV-Licht Kettendefekte längs des Polymerrückgrats erzeugt. 1H NMR and FTIR Spektroskopie wurden zur Untersuchung dieser Kettendefekte herangezogen. Wir konnten außerdem beobachten, dass die Wellenlängen der Absorptionsmaxima der MEH-PPV Fraktionen mit der Kettenlänge zunehmen bis die Zahl der Wiederholeinheiten n  110 erreicht ist. Dieser Wert ist signifikant größer als früher berichtet. rnOptische Eigenschaften von MEH-PPV Wellenleitern wurden untersucht und es konnte gezeigt werden, dass sich die optischen Konstanten ausgezeichnet reproduzieren lassen. Wir haben die Einflüsse der Lösungsmittel und Temperatur beim Spincoaten auf Schichtdicke, Oberflächenrauigkeit, Brechungsindex, Doppelbrechung und Wellenleiter-Dämpfungsverlust untersucht. Wir fanden, dass mit der Erhöhung der Siedetemperatur der Lösungsmittel die Schichtdicke und die Rauigkeit kleiner werden, während Brechungsindex, Doppelbrechung sowie Wellenleiter-Dämpfungsverluste zunahmen. Wir schließen daraus, dass hohe Siedetemperaturen der Lösungsmittel niedrige Verdampfungsraten erzeugen, was die Aggregatbildung während des Spincoatings begünstigt. Hingegen bewirkt eine erhöhte Temperatur während der Schichtpräparation eine Erhöhung von Schichtdicke und Rauhigkeit. Jedoch nehmen Brechungsindex und der Doppelbrechung dabei ab.rn Für die Schichtpräparation auf Glassubstraten und Quarzglas-Fasern kam das Dip-Coating Verfahren zum Einsatz. Die Schichtdicke der Filme hängt ab von Konzentration der Lösung, Transfergeschwindigkeit und Immersionszeit. Mit Tauchbeschichtung haben wir Schichten von MEH-PPV auf Flaschen-Mikroresonatoren aufgebracht zur Untersuchung von rein-optischen Schaltprozessen. Dieses Verfahren erweist sich insbesondere für MEH-PPV mit niedrigem Mw als vielversprechend für die rein-optische Signalverarbeitung mit großer Bandbreite.rn Zusätzlich wurde auch die Morphologie dünner Schichten aus anderen PPV-Derivaten mit Hilfe von FTIR Spektroskopie untersucht. Wir konnten herausfinden, dass der Alkyl-Substitutionsgrad einen starken Einfluss auf die mittlere Orientierung der Polymerrückgrate in dünnen Filmen hat.rn

Digital light beam deflector with liquid cristal (1980)

In this letter , we report a new method for óptical switching based on the electro-optical properties of liquid crystal materials and, in particular, of the nematic type. The basis of this new method is the use of twisted wedge structure that has not been reported before elsewhere. In the past several years , great efforts in integrated optics have been made to develop optical switching devices with fast speed by using electro-optic, acousto-optic or magneto -optic materials. A mechanically operated óptical switch made of grade-index rod 1enses and e1ectromagnets has been proposed too . Switches of this kind include one input and two output waveguides and, depending on the app1ied voltage, one incident light on the switch exits either in one or another of the two output waveguides.

Low-power vertical cavity NAND gate

The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.

Tendencias actuales y perspectivas de las comunicaciones ópticas

A short review to the main problems today in optical Communications is given. Several topics, namely, coherent optical systems, high-speed transmission systems, optical switching, fluoride glasses and wavelength division multiplexing are studied. Their status and future is reported. Some considerations coming out from the next ECOC'88, give way to the author impresions about the present and future of Optical Communications.

The use of loop mirrors and chirped fibre Bragg gratings in actively-modelocked fibre lasers

The development of an all-optical communications infrastructure requires appropriate optical switching devices and supporting hardware. This thesis presents several novel fibre lasers which are useful pulse sources for high speed optical data processing and communications. They share several attributes in common: flexibility, stability and low-jitter output. They all produce short (picosecond) and are suitable as sources for soliton systems. The lasers are all-fibre systems using erbium-doped fibre for gain, and are actively-modelocked using a dual-wavelength nonlinear optical loop mirror (NOLM) as a modulator. Control over the operating wavelength and intra-cavity dispersion is obtained using a chirped in-fibre Bragg grating.Systems operating both at 76MHz and gigahertz frequencies are presented, the latter using a semiconductor laser amplifier to enhance nonlinear action in the loop mirror. A novel dual-wavelength system in which two linear cavities share a common modulator is presented with results which show that the jitter between the two wavelengths is low enough for use in switching experiments with data rates of up to 130Gbit/s.

Recent advances in spin crossover research

Thermal spin transition (spin crossover), one of the most fascinating dynamic electronic structure phenomena occurring in coordination compounds of third row transition metal ions, mostly of iron(II), iron(III) and cobalt(II) with critical ligand field strengths competing with the spin pairing energy, has attracted increasing attention by many research groups. One of the reasons is the promising potential for practical applications. In this chapter we intend to cover essential recent work, primarily accomplished within the European research network on “Thermal and Optical Switching of Molecular Spin States (TOSS)”. New spin crossover compounds and their thermal spin transition behaviour, also under applied pressure, novel effects observed by irradiation and magnetic field, will be discussed. Progress in theoretical treatments of spin crossover phenomena, particularly cooperativity, will be briefly outlined. The chapter concludes with a summary of research highlights published by the partner laboratories of the TMR network TOSS.

Análise de conversores de frequência óptica baseados em amplificadores ópticos semicondutores

Dissertação de mest. em Engenharia de Sistemas e Computação, Faculdade de Ciências e Tecnologia, Univ. do Algarve, 2002

Future switching technology: bacterial protein-based programmable all-optical switch for integrated optics applications?

We report on the bacterial protein-based all-optical switches which operate at low laser power, high speed and fulfil most of the requirements to be an ideal all-optical switch without any moving parts involved. This consists of conventional optical waveguides coated with bacteriorhodopsin films at switching locations. The principle of operation of the switch is based on the light-induced refractive index change of bacteriorhodopsin. This approach opens the possibility of realizing proteinbased all-optical switches for communication network, integrated optics and optical computers.

Electrical switching and optical studies on amorphous GexSe35-xTe65 thin films

The electrical switching behavior of amorphous GexSe35-xTe65 thin film samples has been studied in sandwich geometry of electrodes. It is found that these samples exhibit memory switching behavior, which is similar to that of bulk Ge-Se-Te glasses. As expected, the switching voltages of GexSe35-xTe65 thin film samples are lower compared to those of bulk samples. In both thin film amorphous and bulk glassy samples, the switching voltages are found to increase with the increase in Ge concentration, which is consistent with the increase in network connectivity with the addition of higher coordinated Ge atoms. A sharp increase is seen in the composition dependence of the switching fields of amorphous GexSe35-xTe65 films above x = 21, which can be associated with the stiffness transition. Further, the optical band gap of a-GexSe35-x Te-65 thin film samples, calculated from the absorption spectra, is found to show an increasing trend with the increase in Ge concentration, which is consistent with the variation of switching fields with composition. The increase in structural cross-linking with progressive addition of 4-fold coordinated Ge atoms is one of the main reasons for the observed increase in switching fields as well as band gaps of GexSe35-xTe65 samples. (C) 2011 Elsevier B.V. All rights reserved.

Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films

Amorphous thin film Ge15Te85-xSnx (1 <= x <= 5) and Ge17Te83-xSnx (1 <= x <= 4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge15Te85-xSnx and Ge17Te83-xSnx amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge15Te85-xSnx and Ge17Te83-xSnx thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.

Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films

This paper reports optical, photo-acoustic and electrical switching investigations of GeS2 amorphous thin films of different thicknesses, deposited on glass substrates in vacuum. The Tauc parameter (B (1/2)) and Urbach energy (E (U)) have been determined from the transmittance spectra, to understand the changes in structural disorder; it is found that B (1/2) increases whereas E (U) decreases as the thickness of the films increases. Based on the results, it is suggested that bond re-arrangement, i.e. transformation from homopolar bonds to heteropolar bonds, takes place with increase in thickness. The thermal diffusivity values of GeS2 thin films also show the presence of a chemically ordered network in the GeS2 thin films. Further, it is found that these films exhibit memory-type electrical switching. The observed variation in the switching voltages has been understood on the basis of increase in chemical order.