Discrete wavelet transform signal analyzer

This paper addresses the problem of processing biological data, such as cardiac beats in the audio and ultrasonic range, and on calculating wavelet coefficients in real time, with the processor clock running at a frequency of present application-specified integrated circuits and field programmable gate array. The parallel filter architecture for discrete wavelet transform (DWT) has been improved, calculating the wavelet coefficients in real time with hardware reduced up to 60%. The new architecture, which also processes inverse DWT, is implemented with the Radix-2 or the Booth-Wallace constant multipliers. One integrated circuit signal analyzer in the ultrasonic range, including series memory register banks, is presented. © 2007 IEEE.

Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals

We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated. © 2009 SPIE.

Um sistema eletrônico de 2kW para emulação/simulação experimental da característica estática de saída, tensão (versus) corrente, de sistemas de geração com células combustível tipo PEM

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Célula de comutação de três estados aplicada ao pré-regulador boost de estágio único e elevado fator de potência

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Pré-regulador retificador boost com controle digital por valores médios, para sistema de iluminação fluorescente multi-lâmpadas, utilizando dispositivo FPGA e VHDL

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Sintetizador analógico de sinais ortogonais: projeto e construção usando tecnologia CMOS

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Desenvolvimento de um sintetizador de freqüência de baixo custo em tecnologia CMOS

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Análise e síntese de um processador digital wavelet

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Modelagem IEEE 1815 DNP3 em VHDL e análise de comunicação SG via IEEE 802.15.4 e IEEE 802.11

Pós-graduação em Engenharia Elétrica - FEIS

Controlador PID utilizando microcontrolador PIC

This monograph proposes the implementation of a low cost PID controller utilizing a PIC microcontroller, and its application in a positioning system previously controlled by a dedicated integrated circuit for a positioning system. Applying the closed-loop PID control, the system instability was reduced, and its response was smoother, eliminating vibrations and mechanical wear compared to its response with the dedicated integrated circuit, which has a very limited control action. The actuator of the system is a DC motor, whose speed is controlled by the Pulse Width Modulation (PWM) technique, using a Full-Bridge circuit, allowing the shift of direction of rotation. The utilized microcontroller was the PIC16F684, which has an enhanced PWM module, with its analog converters used as reference and position feedback. The positioning sensor is a multiturn potentiometer coupled to the motor axis by gears. The possibility of programming the PID coefficients in the microcontroller, as well as the adjustment of the sampling rate, allows the implemented system achieving high level of versatility

Simulação em tempo real de sistemas de distribuição de energia elétrica utilizando-se estruturas com descrição de hardware em software

Pós-graduação em Engenharia Elétrica - FEIS

A radial basis function network (RBFN) for function approximation

A radial basis function network (RBFN) circuit for function approximation is presented. Simulation and experimental results show that the network has good approximation capabilities. The RBFN was a squared hyperbolic secant with three adjustable parameters amplitude, width and center. To test the network a sinusoidal and sine function,vas approximated.

An analog implementation of radial basis function network appropriate for transducer linearizer

A circuit for transducer linearizer tasks have been designed and built using discrete components and it implements by: a Radial Basis Function Network (RBFN) with three basis functions. The application in a linearized thermistor showed that the network has good approximation capabilities. The circuit advantages is the amplitude, width and center.

A low-power silicon-on-insulator PWM discriminator for biomedical applications

A CMOS/SOI circuit to decode PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a double-integration concept and does not require dc filtering. Nonoverlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mu m single-metal SOI fabrication process and has an effective area of 2mm(2) Typically, the measured resolution of encoding parameter a was better than 10% at 6MHz and V-DD=3.3V. Stand-by consumption is around 340 mu W. Pulses with frequencies up to 15MHz and alpha = 10% can be discriminated for V-DD spanning from 2.3V to 3.3V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.