A Novel VSI- and CSI-Fed Dual Stator Induction Motor Drive Topology for Medium-Voltage Drive Applications

A new configuration is proposed for high-power induction motor drives. The induction machine is provided with two three-phase stator windings with their axes in line. One winding is designed for higher voltage and is meant to handle the main (active) power. The second winding is designed for lower voltage and is meant to carry the excitation (reactive) power. The excitation winding is powered by an insulated-gate-bipolar-transistor-based voltage source inverter with an output filter. The power winding is fed by a load-commutated current source inverter. The commutation of thyristors in the load-commutated inverter (LCI) is achieved by injecting the required leading reactive power from the excitation inverter. The MMF harmonics due to the LCI current are also cancelled out by injecting a suitable compensating component from the excitation inverter, so that the electromagnetic torque of the machine is smooth. Results from a prototype drive are presented to demonstrate the concept.

A 10 tesla table-top controlled waveform magnet

Controlled waveform magnets (CWMs) are a class of pulsed magnets whose pulse shape with time can be programmed by the user. With a CWM, the user gains control not only over the magnitude of the field but also over its rate of change. In this work we present a table-top CWM, driven by a capacitor bank, capable of producing virtually any user-shaped magnetic field waveform up to 10 tesla. Insulated gate bipolar transistor chips have been paralleled to form the high current switch and paralleled chips of SiC Schottky diodes form the crowbar diode module. Sample controlled waveforms including flat-tops up to 10 tesla and some triangular magnetic field pulses have been successfully generated for 10-20 ms with a ripple < 1%. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.3699316]

Active Voltage Control on series connection of IGBTs and diode recovery optimization

In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimised. © 2010 IEEE.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

A novel single-phase ZCS-PWM high-power-factor boost rectifier

This paper presents a novel single-phase high-power-factor (HPF) pulsewidth-modulated (PWM) boost rectifier featuring soft commutation of the active switches at zero current (ZC), It incorporates the most desirable properties of conventional PWM and soft-switching resonant techniques.The input current shaping is achieved with average current mode control and continuous inductor current mode.This new PWM converter provides ZC turn on and turn off of the active switches, and it is suitable for high-power applications employing insulated gate bipolar transistors (IGBT's),The principle of operation, the theoretical analysis, a design example, and experimental results from a laboratory prototype rated at 1600 W with 400-Vdc output voltage are presented. The measured efficiency and the power factor were 96.2% and 0.99%, respectively, with an input current total harmonic distortion (THD) equal to 3.94%, for an input voltage with THD equal to 3.8%, at rated load.

Novel high-power-factor ZCS-PWM preregulators

This paper introduces novel zero-current-switching (ZCS) pulsewidth-modulated (PWM) preregulators based on a new soft-commutation cell, suitable for insulated gate bipolar transistor applications. The active switches in these proposed rectifiers turn on in zero current and turn off in zero current-zero voltage. In addition, the diodes turn on in zero voltage and their reverse-recovery effects over the active switches are negligible. Moreover, based on the proposed cell, an entire family of de-to-de ZCS-PWM converters can be generated, providing conditions to obtain naturally isolated converters, for example, derived buck-boost, Sepic. and Zeta converters. The novel ac-to-dc ZCS-PWM boost and Zeta preregulators are presented in order to verify the operation of this soft-commutation cell, In order to minimize the harmonic contents of the input current, increasing the ac power factor, the average-current-mode control is used, obtaining preregulators with ac power factor near unity and high efficiency at wide load range. The principle of operation, theoretical analysis, design example, and experimental results from test units for the novel preregulators are presented. The new boost preregulator was designed to nominal values of 1.6 kW output power, 220 V(rms) input voltage, 400 V(dc) output voltage, and operating at 20 kHz. The measured efficiency and power factor of the new ZCS-PWM boost preregulator were 96.7% and 0,99, respectively, with an input current total harmonic distortion (THD) equal to 3.42% for an input voltage with THD equal to 1.61%, at rated load, the new ZCS-PWM Zeta preregulator was designed to voltage step-down operation, and the experimental results were obtained from a laboratory prototype rated at 500 W, 220 V(rm), input voltage, 110 V(dc) output voltage, and operating at 50 kHz. The measured efficiency of the new ZCS-PWM Zeta preregulator is approximately 96.9% and the input power factor is 0.98, with an input current THD equal to 19.07% while the input voltage THD is equal to 1.96%, at rated load.

Novel zero-current-switching PWM converters

This paper presents a new family of pulsewidth-modulated (PWM) converters, featuring soft commutation of the semiconductors at zero current (ZC) in the transistors and zero voltage (ZV) in the rectifiers, Besides operating at constant frequency and with reduced commutation losses, these new converters have output characteristics similar to the hard-switching-PWM counterpart, which means that there is no circulating reactive energy that would cause large conduction losses, the new family of zero-current-switching (ZCS)-PWM converters is suitable for high-power applications using insulated gate bipolar transistors (IGBT's). The advantages of the new ZCS-PWM boast converter employing IGBT's, rated at 1.6 kW and operating at 20 kHz, are presented, This new ZCS operation can reduce the average total power dissipation in the semiconductors practically by half, when compared with the hard-switching method, This new ZCS-PWM boost converter is suitable for high-power applications using Ie;BT's in power-factor correction, the principle of operation, theoretical analysis, and experimental results of the new ZCS-PWM boost converter are provided in this paper to verify the performance of this new family of converters.

A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT

In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time. © 2012 IEEE.

IGBT series connection under Active Voltage Control with temporary clamp

This paper presents the use of an Active Voltage Control (AVC) technique for balancing the voltages in a series connection of Insulated Gate Bipolar Transistors (IGBTs). The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, a temporary clamp technique is introduced. The temporary clamp technique clamps the collector-emitter voltage of all the series connected IGBTs at the ideal voltage so that the IGBTs will share the voltage evenly. © 2012 IEEE.

In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.

In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.