681 resultados para impurities


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Defects are usually present in organic polymer films and are commonly invoked to explain the low efficiency obtained in organic-based optoelectronic devices. We propose that controlled insertion of substitutional impurities may, on the contrary, tune the optoelectronic properties of the underivatized organic material and, in the case studied here, maximize the efficiency of a solar cell. We investigate a specific oxygen-impurity substitution, the keto-defect -(CH(2)-C=O)- in underivatized crystalline poly(p-phenylenevinylene) (PPV), and its impact on the electronic structure of the bulk film, through a combined classical (force-field) and quantum mechanical (DFT) approach. We find defect states which suggest a spontaneous electron hole separation typical of a donor acceptor interface, optimal for photovoltaic devices. Furthermore, the inclusion of oxygen impurities does not introduce defect states in the gap and thus, contrary to standard donor-acceptor systems, should preserve the intrinsic high open circuit voltage (V(oc)) that may be extracted from PPV-based devices.

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We carried out a first principles investigation on the electronic properties and chemical trends of 3d transition metal related impurities in diamond. In terms of formation energy, the interstitial site is considerably more unfavorable than the substitutional or divacancy ones. Going from Ti to Ni, the 3d-related energy levels in the gap become deeper toward the valence band in all three sites. However, in the divacancy one, those levels cross with the divacancy-related ones, such that the electronic property of the center depends on the character of the highest occupied level. (C) 2009 Elsevier B.A. All rights reserved.

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In this work we employ the state-of-the-art pseudopotential method, within a generalized gradient approximation to the density functional theory, combined with a recently developed method for the calculation of HREELS spectra to study a series of different proposed models for carbon incorporation on the silicon (001) surface. A fully discussion on the geometry, energetics and specially the comparison between experimental and theoretical STM images and electron energy loss spectra indicate that the Si(100)-c(4 x 4) is probably induced by Si-C surface dinners, in agreement with recent experimental findings. (C) 2009 Elsevier B.V. All rights reserved.

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We shall consider a coupled nonlinear Schrodinger equation- Bloch system of equations describing the propagation of a single pulse through a nonlinear dispersive waveguide in the presence of resonances; this could be, for example, a doped optical fibre. By making use of the integrability of the dynamic equations, we shall apply the finite-gap integration method to obtain periodic solutions for this system. Next, we consider the problem of the formation of solitons at a sharp front pulse and, by means of the Whitham modulational theory, we derive the amplitude and velocity of the largest soliton.

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An integrable asymmetric exclusion process with impurities is formulated. The model displays the full spectrum of the stochastic asymmetric XXZ chain plus new levels. We derive the Bethe equations and calculate the spectral gap for the totally asymmetric diffusion at half filling. While the standard asymmetric exclusion process without impurities belongs to the KPZ universality class with an exponent 3/2, our model has a scaling exponent 5/3.

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Measurements of internal friction as a function of temperature were carried out in samples of mobium containing different amounts of interstitial solutes (oxygen and nitrogen) and one sample of mobium containing initially only nitrogen as interstitial solute. The experimental spectra of internal friction as a function of temperature were obtained with a torsion pendulum of the inverted Ke-type and resolved, using the method of successive subtraction, into a series of constituent Debye peaks corresponding to different interactions. For each relaxation process it was possible to obtain the height (Q(max)(-1)) and temperature (T-p) of the peak, the activation energy (E) and the relaxation time (t(o)). The height, shape and temperature of these peaks depend on the concentration of interstitial elements. The observed peaks were associated with matrix-interstitial (Nb-O, Nb-N) and interstitial-interstitial (O-N) interaction processes. (C) 2003 Elsevier B.V. All rights reserved.

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We have used a first-principles real-space approach to investigate the electronic structure and the magnetic behavior of interstitial Fe impurities in divalent Ca, Sr, and Yb hosts. The dependence of the local moment as a function of lattice relaxation around the impurity is obtained and contrasted with that of interstitial Fe in trivalent and tetravalent Zr, Y, Ti, and Sc hosts. The trends obtained for local moment formation at the impurity site an in agreement with experimental time-differential perturbed gamma-ray angular distribution technique observations.

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The soliton propagation in a medium with Kerr nonlinearity and resonant impurities was studied by a variational approach. The existence of a solitary wave was shown within the framework of a combined nonintegrable system composed of one nonlinear Schrödinger and a pair of Bloch equations. The analytical solution which was obtained, was tested through numerical simulations confirming its solitary wave nature.

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The general concept that low-water-soluble phosphorus (P) fertilizers should be more agronomically effective when applied to acidic soils was developed based on sources containing mainly calcium (Ca)-P compounds, but it may not hold true for sources with different chemical composition. To obtain information related to this issue, two important iron (Fe)-potassium (K)-P compounds present in superphosphates [Fe 3 KH 8 (PO 4 ) 6·6H 2 O, H8, and Fe 3 KH 14 (PO 4 ) 8·4H 2 O, H14] were prepared and characterized. These P sources were used to provide 30 and 60 mg P kg -1 as neutral ammonium citrate (NAC)+H 2 O-soluble P. Reagent-grade monocalcium phosphate (MCP) was used as a standard P source with high water solubility with an additional rate of 120 mg P kg -1 included. Also, mixtures of both Fe-K-P compounds and MCP were prepared to provide 0, 25, 50, 75, and 100% of the total P as MCP. All sources were applied to a clayey loamy acid soil (pH 5.3) classified as Rhodic Kanhapludult. The soil was incubated at two rates (0 and 10 g kg -1 ) of lime, which resulted in pH 5.4 and 6.8. Upland rice was cultivated to maturity. The H14 compound confirmed to be a highly effective source of P for the rice plants at both soil pH, as opposed to the H8, which was poorly effective when applied alone. When mixed with water-soluble P (WSP), the H8 was able to provide P to the plants with the maximum yield of upland rice reached with 54.8 and 80.5% of WSP for pH 5.4 and 6.8, respectively. The high agronomic performance of the H14 compound clearly indicates that this low-water-soluble P source cannot be deemed as ineffective at high soil pH. Copyright © Taylor & Francis Group, LLC.

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The pristine boron nitride nanotubes have a large direct band gap around 5 eV. This band gap can be engineered by doping. We investigate electronic structure of the doped hexagonal boron nitride (5,5) nanotubes using the linearized augmented cylindrical wave method. In particular, this work focuses on systematical study of the band gap and the density of states around the Fermi-level when the nanotubes are doped by intrinsic impurities of two substitutional boron atoms in a super cell and a comparative analysis of the relative stability of three structures studied here. This corresponds to 3.3% of impurity concentration. We calculate 29 configurations of the nanotubes with different positions of the intrinsic impurities in the nanotube. The band gap and density of states around the Fermi level show strong dependence on the relative positions of the impurity atoms. The two defect sub bands called D(B) appear in the band gap of the pristine nanotube. The doped nanotubes possess p-type semiconductor properties with the band gap of 1.3-1.9 eV.

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A capillary electrophoretic enantioselective method with UV detection was developed and validated for the simultaneous quantification of zopiclone enantiomers and its impurities, zopiclone-N-oxide enantiomers, and 2-amino-5-chloropyridine, in tablets. The analytes were extracted from the tablets using ACN and were separated in an uncoated fused-silica capillary (50 mu m, 42 cm effective length, 50 cm total length) using 80 mM sodium phosphate buffer pH 2.5 and 5 mM carboxymethyl-beta-cyclodextrin as running buffer. The analytes and the internal standard (trimethoprim) were detected at 305 and 200 nm, respectively. A voltage of 27 kV was applied and the capillary temperature was maintained at 25 degrees C. All enantiomers were analyzed within 8 min and linear calibration curves over the concentration range of 0.40.8 mg mL-1 for each zopiclone enantiomer, 0.81.6 mu g mL-1 for 2-amino-5-chloropyridine and 0.40.8 mu g mL-1 for each zopiclone-N-oxide enantiomer were obtained. The coefficients of correlation obtained for the linear curves were greater than 0.99. The intra-day and inter-day accuracy and precision were lower than 2% for all analytes. This validated method was employed to study the degradation and racemization of zopiclone under stress conditions. This application demonstrated the importance of a stability-indicating assay method for this drug.

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A simple and sensitive analytical method for simultaneous determination of anastrozole, bicalutamide, and tamoxifen as well as their synthetic impurities, anastrozole pentamethyl, bicalutamide 3-fluoro-isomer, and tamoxifen e-isomer, was developed and validated by using high performance liquid chromatography (HPLC). The separation was achieved on a Symmetry (R) C-8 column (100 x 4.6 mm i.d., 3.5 mu m) at room temperature (+/- 24 degrees C), with a mobile phase consisting of acetonitrile/water containing 0.18% N,N dimethyloctylamine and pH adjusted to 3.0 with orthophosphoric acid (46.5/53.5, v/v) at a flow rate of 1.0 mL min(-1) within 20 min. The detection was made at a wavelength of 270 nm by using ultraviolet (UV) detector. No interference peaks from excipients and relative retention time indicated the specificity of the method. The calibration curve showed correlation coefficients (r) > 0.99 calculated by linear regression and analysis of variance (ANOVA). The limit of detection (LOD) and limit of quantitation (LOQ), respectively, were 2.2 and 6.7 mu g mL(-1) for anastrozole, 2.61 and 8.72 mu g mL(-1) for bicalutamide, 2.0 and 6.7 mu g mL(-1) for tamoxifen, 0.06 and 0.22 mu g mL(-1) for anastrozole pentamethyl, 0.02 and 0.07 mu g mL(-1) for bicalutamide 3-fluoro-isomer, and 0.002 and 0.007 mu g mL(-1) for tamoxifen e-isomer. Intraday and interday relative standard deviations (RSDs) were <2.0% (drugs) and <10% (degradation products) as well as the comparison between two different analysts, which were calculated by f test. (C) 2012 Elsevier B.V. All rights reserved.

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By combining first-principles electronic structure calculations and existing time-differential gamma-gamma perturbed-angular-correlation experiments we studied the site localization, the local environment, and the electronic structure of Cd impurities in sapphire (alpha-Al2O3) single crystals in different charged states. The ab initio calculations were performed with the full-potential augmented plane wave plus local orbitals method and the projector augmented wave method. Comparing the calculated electric-field-gradient tensor at the Cd nuclei in the alpha-Al2O3 host lattice and the corresponding available experimental values, we have seen that it is equally possible for Cd to replace an Al atom (in a negative charge state) or to be placed in an interstitial site (in a neutral charge state). To finally address the issue of the Cd impurity localization, we performed formation energy calculations. These results have shown that Cd placed in the substitutional Al site, in the negatively charged state, is the most probable configuration.

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We performed a first principles investigation on the electronic properties of 4f-rare earth substitutional impurities in zincblende gallium nitride (GaN:REGa, with RE=Eu, Gd, Tb, Dy, Ho, Er and Tm). The calculations were performed within the all electron methodology and the density functional theory. We investigated how the introduction of the on-site Hubbard U potential (GGA + U) corrects the electronic properties of those impurities. We showed that a self-consistent procedure to compute the Hubbard potential provides a reliable description on the position of the 4f-related energy levels with respect of the GaN valence band top. The results were compared to available data coming from a recent phenomenological model. (C) 2012 Elsevier B.V. All rights reserved.